CA2044389A1 - Process and equipment for casting silicon blocks of columnar structure as the base material for solar cells - Google Patents

Process and equipment for casting silicon blocks of columnar structure as the base material for solar cells

Info

Publication number
CA2044389A1
CA2044389A1 CA002044389A CA2044389A CA2044389A1 CA 2044389 A1 CA2044389 A1 CA 2044389A1 CA 002044389 A CA002044389 A CA 002044389A CA 2044389 A CA2044389 A CA 2044389A CA 2044389 A1 CA2044389 A1 CA 2044389A1
Authority
CA
Canada
Prior art keywords
mold
silicon
heating
station
molten silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002044389A
Other languages
English (en)
French (fr)
Inventor
Georg Priewasser
Lothar Huber
Gerhard Spatzier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Georg Priewasser
Lothar Huber
Gerhard Spatzier
Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe M.B.H.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Georg Priewasser, Lothar Huber, Gerhard Spatzier, Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe M.B.H. filed Critical Georg Priewasser
Publication of CA2044389A1 publication Critical patent/CA2044389A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
CA002044389A 1990-06-13 1991-06-12 Process and equipment for casting silicon blocks of columnar structure as the base material for solar cells Abandoned CA2044389A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4018967A DE4018967A1 (de) 1990-06-13 1990-06-13 Verfahren und vorrichtung zum giessen von siliciumbloecken mit kolumnarstruktur als grundmaterial fuer solarzellen
DEP4018967.8 1990-06-13

Publications (1)

Publication Number Publication Date
CA2044389A1 true CA2044389A1 (en) 1991-12-14

Family

ID=6408361

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002044389A Abandoned CA2044389A1 (en) 1990-06-13 1991-06-12 Process and equipment for casting silicon blocks of columnar structure as the base material for solar cells

Country Status (6)

Country Link
US (1) US5254300A (ko)
EP (1) EP0462494A1 (ko)
JP (1) JPH04240192A (ko)
KR (1) KR920000980A (ko)
CA (1) CA2044389A1 (ko)
DE (1) DE4018967A1 (ko)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998016466A1 (fr) * 1996-10-14 1998-04-23 Kawasaki Steel Corporation Procede et appareil de preparation de silicium polycristallin et procede de preparation d'un substrat en silicium pour cellule solaire
DE69621348T2 (de) * 1996-10-14 2002-09-05 Kawasaki Steel Co Verfahren und vorrichtung zur herstellung von polykristallinem silizium und verfahren zur herstellung eines siliziumsubstrats für eine solarzelle
DE19711550C2 (de) * 1997-03-20 2000-06-21 Bayer Ag Verfahren zur Herstellung von im wesentlichen Randzonen-freien Formteilen aus multikristallinem Silicium und die Verwendung dieser Formteile
DE19854838A1 (de) * 1998-11-27 2000-05-31 Bayer Solar Gmbh Gerichtet erstarrtes multikristallines Silicium sowie Verfahren zu dessen Herstellung
JP3872233B2 (ja) * 1999-06-29 2007-01-24 京セラ株式会社 シリコン鋳造方法
DE19934940C2 (de) * 1999-07-26 2001-12-13 Ald Vacuum Techn Ag Vorrichtung zum Herstellen von gerichtet erstarrten Blöcken und Betriebsverfahren hierfür
JP2002170780A (ja) * 2000-12-01 2002-06-14 Sharp Corp ルツボおよびそれを使用した多結晶シリコンの成長方法
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
DE10339402B4 (de) 2003-08-27 2011-02-24 Crystal Growing Systems Gmbh Schmelzvorrichtung mit einem Schmelztiegel sowie Verfahren zum Zuführen von Granulat in eine im Schmelztiegel vorhandene Schmelze
US7556764B2 (en) * 2005-11-09 2009-07-07 Heraeus Shin-Etsu America, Inc. Silica vessel with nozzle and method of making
DE102007038851A1 (de) * 2007-08-16 2009-02-19 Schott Ag Verfahren zur Herstellung von monokristallinen Metall- oder Halbmetallkörpern
ATE544884T1 (de) † 2007-12-19 2012-02-15 Schott Ag Verfahren zur herstellung eines monokristallinen oder polykristallinen halbleitermaterials
TW200930851A (en) * 2008-01-03 2009-07-16 Green Energy Technology Inc Crystal growth furnace having guiding structure for overflow slurry
DE102009022412A1 (de) * 2009-05-22 2010-11-25 Ald Vacuum Technologies Gmbh Vorrichtung zum gerichteten Erstarren geschmolzener Metalle
DE102009034145B4 (de) 2009-07-20 2015-10-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung, Verwendung der Vorrichtung und Verfahren zur Herstellung von Ingots aus multikristallinem Silizium
DE102010048602A1 (de) * 2010-10-15 2012-04-19 Centrotherm Sitec Gmbh Schmelztiegel für Silizium, Schmelztiegelanordnung und Trenneinheit für einen Schmelztiegel
US9352389B2 (en) 2011-09-16 2016-05-31 Silicor Materials, Inc. Directional solidification system and method
US20130192302A1 (en) * 2012-02-01 2013-08-01 Memc Singapore Pte. Ltd. (Uen200614794D) Crucibles for holding molten material and methods for producing them and for their use
DE102013203740B4 (de) * 2013-03-05 2020-06-18 Solarworld Industries Gmbh Vorrichtung und Vefahren zur Herstellung von Silizium-Blöcken
TWI643983B (zh) * 2013-03-14 2018-12-11 美商希利柯爾材料股份有限公司 定向凝固系統及方法
JP6711327B2 (ja) * 2017-07-18 2020-06-17 株式会社Sumco シリコンウェーハ製造工程の評価方法およびシリコンウェーハの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2508803C3 (de) * 1975-02-28 1982-07-08 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur
US4256681A (en) * 1976-12-16 1981-03-17 Semix Incorporated Method of producing semicrystalline silicon
DE2925679A1 (de) * 1979-06-26 1981-01-22 Heliotronic Gmbh Verfahren zur herstellung von siliciumstaeben
EP0055310A1 (en) * 1980-12-29 1982-07-07 Semix Incorporated Method and apparatus for the continuous casting of silicon
JPS5819639A (ja) * 1981-07-29 1983-02-04 Toyoda Autom Loom Works Ltd 冷房装置における可変容量圧縮機の運転制御方法
DE3427465A1 (de) * 1984-07-25 1986-01-30 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren und vorrichtung zur taktweisen herstellung von siliciumformkoerpern
DE3531610A1 (de) * 1985-09-04 1987-03-05 Wacker Chemitronic Verfahren und vorrichtung zur herstellung von siliciumstaeben
DE3536743C2 (de) * 1985-10-15 1994-11-10 Siemens Ag Verfahren zum Herstellung von großflächigen Siliziumkristallkörpern für Solarzellen
JP2657240B2 (ja) * 1988-04-15 1997-09-24 住友シチックス株式会社 シリコン鋳造装置
US4834382A (en) * 1988-06-13 1989-05-30 Donald Spector Inflatable play ball
JP2660225B2 (ja) * 1988-08-11 1997-10-08 住友シチックス株式会社 シリコン鋳造装置

Also Published As

Publication number Publication date
DE4018967A1 (de) 1991-12-19
KR920000980A (ko) 1992-01-29
EP0462494A1 (de) 1991-12-27
US5254300A (en) 1993-10-19
JPH04240192A (ja) 1992-08-27

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Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued