CA2021671A1 - Semiconducteur haute tension et procede de fabrication - Google Patents

Semiconducteur haute tension et procede de fabrication

Info

Publication number
CA2021671A1
CA2021671A1 CA2021671A CA2021671A CA2021671A1 CA 2021671 A1 CA2021671 A1 CA 2021671A1 CA 2021671 A CA2021671 A CA 2021671A CA 2021671 A CA2021671 A CA 2021671A CA 2021671 A1 CA2021671 A1 CA 2021671A1
Authority
CA
Canada
Prior art keywords
high voltage
semiconductor device
region
doped
voltage semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2021671A
Other languages
English (en)
Other versions
CA2021671C (fr
Inventor
Denis Jaume
Andre Peyre Lavigne
Georges Charitat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Components Industries LLC
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2021671A1 publication Critical patent/CA2021671A1/fr
Application granted granted Critical
Publication of CA2021671C publication Critical patent/CA2021671C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
CA002021671A 1989-07-21 1990-07-20 Semiconducteur haute tension et procede de fabrication Expired - Fee Related CA2021671C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8909897A FR2650122B1 (fr) 1989-07-21 1989-07-21 Dispositif semi-conducteur a haute tension et son procede de fabrication
FR8909897 1989-07-21

Publications (2)

Publication Number Publication Date
CA2021671A1 true CA2021671A1 (fr) 1991-01-22
CA2021671C CA2021671C (fr) 1993-11-02

Family

ID=9384046

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002021671A Expired - Fee Related CA2021671C (fr) 1989-07-21 1990-07-20 Semiconducteur haute tension et procede de fabrication

Country Status (9)

Country Link
US (1) US5060047A (fr)
EP (1) EP0408868B1 (fr)
JP (1) JP2580850B2 (fr)
KR (1) KR940002768B1 (fr)
CA (1) CA2021671C (fr)
DE (1) DE69014454T2 (fr)
ES (1) ES2064524T3 (fr)
FR (1) FR2650122B1 (fr)
MY (1) MY105940A (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2666174B1 (fr) * 1990-08-21 1997-03-21 Sgs Thomson Microelectronics Composant semiconducteur haute tension a faible courant de fuite.
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics
JPH0799307A (ja) * 1993-09-29 1995-04-11 Fuji Electric Co Ltd 半導体装置およびその製造方法
US6489213B1 (en) * 1996-01-05 2002-12-03 Integrated Device Technology, Inc. Method for manufacturing semiconductor device containing a silicon-rich layer
US5677562A (en) * 1996-05-14 1997-10-14 General Instrument Corporation Of Delaware Planar P-N junction semiconductor structure with multilayer passivation
KR19990024988A (ko) * 1997-09-09 1999-04-06 윤종용 반절연 폴리실리콘막을 이용한 전력 반도체장치의 제조방법
KR100297703B1 (ko) * 1998-02-24 2001-08-07 김덕중 반절연폴리실리콘(sipos)을이용한전력반도체장치및그제조방법
EP0977264B1 (fr) * 1998-07-31 2006-04-26 Freescale Semiconductor, Inc. Structure semiconductrice pour circuit d'attaque avec décalage de niveau
KR100343151B1 (ko) 1999-10-28 2002-07-05 김덕중 Ｓｉｐｏｓ를 이용한 고전압 반도체소자 및 그 제조방법
CN1860614A (zh) * 2003-09-30 2006-11-08 皇家飞利浦电子股份有限公司 具有包括隔离金属区的场电极的横向薄膜soi器件
US7820473B2 (en) * 2005-03-21 2010-10-26 Semiconductor Components Industries, Llc Schottky diode and method of manufacture
US7279390B2 (en) * 2005-03-21 2007-10-09 Semiconductor Components Industries, L.L.C. Schottky diode and method of manufacture
US7821095B2 (en) * 2006-07-14 2010-10-26 Semiconductor Components Industries, Llc Method of forming a Schottky diode and structure therefor
US8884378B2 (en) * 2010-11-03 2014-11-11 Infineon Technologies Ag Semiconductor device and a method for manufacturing a semiconductor device
CN103021801B (zh) * 2011-09-22 2015-07-15 北大方正集团有限公司 掺氧半绝缘多晶硅膜及其制作方法
CN106783608B (zh) * 2016-12-22 2019-10-25 株洲中车时代电气股份有限公司 一种终端结构及其制作方法和功率半导体器件

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979782A (fr) * 1972-12-08 1974-08-01
NL186665C (nl) * 1980-03-10 1992-01-16 Philips Nv Halfgeleiderinrichting.
JPS56131954A (en) * 1980-03-19 1981-10-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS577959A (en) * 1980-06-19 1982-01-16 Toshiba Corp Semiconductor device
JPS5853860A (ja) * 1981-09-26 1983-03-30 Toshiba Corp 高耐圧プレ−ナ型半導体装置
JPS5934638A (ja) * 1982-08-20 1984-02-25 Matsushita Electronics Corp 半導体装置
US4583106A (en) * 1983-08-04 1986-04-15 International Business Machines Corporation Fabrication methods for high performance lateral bipolar transistors
US4647958A (en) * 1984-04-16 1987-03-03 Trw Inc. Bipolar transistor construction
JPS6276673A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 高耐圧半導体装置
IT1202311B (it) * 1985-12-11 1989-02-02 Sgs Microelettronica Spa Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante
JPS63184364A (ja) * 1987-01-27 1988-07-29 Toshiba Corp 半導体装置の製造方法
USH665H (en) * 1987-10-19 1989-08-01 Bell Telephone Laboratories, Incorporated Resistive field shields for high voltage devices

Also Published As

Publication number Publication date
CA2021671C (fr) 1993-11-02
MY105940A (en) 1995-02-28
JPH0358429A (ja) 1991-03-13
US5060047A (en) 1991-10-22
EP0408868B1 (fr) 1994-11-30
ES2064524T3 (es) 1995-02-01
FR2650122B1 (fr) 1991-11-08
EP0408868A2 (fr) 1991-01-23
KR940002768B1 (ko) 1994-04-02
DE69014454D1 (de) 1995-01-12
FR2650122A1 (fr) 1991-01-25
JP2580850B2 (ja) 1997-02-12
DE69014454T2 (de) 1995-06-22
EP0408868A3 (en) 1991-03-20
KR910003829A (ko) 1991-02-28

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Legal Events

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