CA2014296C - Integrated circuit - Google Patents

Integrated circuit Download PDF

Info

Publication number
CA2014296C
CA2014296C CA002014296A CA2014296A CA2014296C CA 2014296 C CA2014296 C CA 2014296C CA 002014296 A CA002014296 A CA 002014296A CA 2014296 A CA2014296 A CA 2014296A CA 2014296 C CA2014296 C CA 2014296C
Authority
CA
Canada
Prior art keywords
semiconductor substrate
conductivity type
mosfet
type
depletion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002014296A
Other languages
English (en)
French (fr)
Other versions
CA2014296A1 (en
Inventor
Nobuo Mikoshiba
Kazuo Tsubouchi
Kazuya Masu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Publication of CA2014296A1 publication Critical patent/CA2014296A1/en
Application granted granted Critical
Publication of CA2014296C publication Critical patent/CA2014296C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Logic Circuits (AREA)
CA002014296A 1989-04-21 1990-04-10 Integrated circuit Expired - Fee Related CA2014296C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10215689 1989-04-21
JP102156/1989 1989-04-21

Publications (2)

Publication Number Publication Date
CA2014296A1 CA2014296A1 (en) 1990-10-21
CA2014296C true CA2014296C (en) 2000-08-01

Family

ID=14319867

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002014296A Expired - Fee Related CA2014296C (en) 1989-04-21 1990-04-10 Integrated circuit

Country Status (6)

Country Link
JP (1) JPH0348460A (cs)
CA (1) CA2014296C (cs)
DE (1) DE4012681A1 (cs)
FR (1) FR2646289A1 (cs)
GB (1) GB2231720B (cs)
NL (1) NL9000949A (cs)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2243948B (en) * 1990-04-20 1994-06-08 Nobuo Mikoshiba Integrated circuit
JPH1168105A (ja) * 1997-08-26 1999-03-09 Mitsubishi Electric Corp 半導体装置
US7064050B2 (en) * 2003-11-28 2006-06-20 International Business Machines Corporation Metal carbide gate structure and method of fabrication
US7667277B2 (en) * 2005-01-13 2010-02-23 International Business Machines Corporation TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks
EP2064744A2 (en) * 2006-09-19 2009-06-03 QuNano AB Assembly of nanoscaled field effect transistors
JP2022175792A (ja) * 2021-05-14 2022-11-25 国立大学法人東京工業大学 半導体装置および浮遊ゲートデバイスの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2012712B2 (de) * 1970-03-17 1972-11-02 Siemens AG, 1000 Berlin und 8000 München Integrierte bistabile kippschaltung mit feldeffekttransistoren
JPS5214383A (en) * 1975-07-24 1977-02-03 Fujitsu Ltd Mis-type semiconductor device
JPS56165359A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device
JPS56165358A (en) * 1980-05-23 1981-12-18 Nec Corp Semiconductor device
JPS57128967A (en) * 1981-02-02 1982-08-10 Nec Corp Integrated semiconductor device
JPS5925273A (ja) * 1982-08-03 1984-02-09 Toshiba Corp 半導体装置及びその製造方法
JPS59168666A (ja) * 1983-03-15 1984-09-22 Toshiba Corp 半導体装置
DE3330851A1 (de) * 1983-08-26 1985-03-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen
JPS60100474A (ja) * 1983-11-04 1985-06-04 Shindengen Electric Mfg Co Ltd 半導体圧力センサ
JPS60100473A (ja) * 1983-11-05 1985-06-04 Mitsubishi Electric Corp 電界効果トランジスタ
JPS61137317A (ja) * 1984-12-10 1986-06-25 Agency Of Ind Science & Technol 半導体装置用電極材料
JPS62219966A (ja) * 1986-03-22 1987-09-28 Toshiba Corp 半導体装置
JPS63113895A (ja) * 1986-10-30 1988-05-18 Nec Corp Ｍｏｓ型半導体集積回路装置

Also Published As

Publication number Publication date
GB2231720B (en) 1993-08-11
NL9000949A (nl) 1990-11-16
GB2231720A (en) 1990-11-21
DE4012681A1 (de) 1990-10-25
FR2646289A1 (fr) 1990-10-26
JPH0348460A (ja) 1991-03-01
FR2646289B1 (cs) 1994-08-19
GB9008525D0 (en) 1990-06-13
CA2014296A1 (en) 1990-10-21

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