CA2001805A1 - Methode et appareil de pluverisation cathodique de galettes en escalier - Google Patents
Methode et appareil de pluverisation cathodique de galettes en escalierInfo
- Publication number
- CA2001805A1 CA2001805A1 CA2001805A CA2001805A CA2001805A1 CA 2001805 A1 CA2001805 A1 CA 2001805A1 CA 2001805 A CA2001805 A CA 2001805A CA 2001805 A CA2001805 A CA 2001805A CA 2001805 A1 CA2001805 A1 CA 2001805A1
- Authority
- CA
- Canada
- Prior art keywords
- target
- regions
- erosion
- parameters
- geometry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 2
- 238000004544 sputter deposition Methods 0.000 title abstract 2
- 235000012431 wafers Nutrition 0.000 title 1
- 230000003628 erosive effect Effects 0.000 abstract 4
- 230000004913 activation Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000001755 magnetron sputter deposition Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3327—Coating high aspect ratio workpieces
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/339,308 US4957605A (en) | 1989-04-17 | 1989-04-17 | Method and apparatus for sputter coating stepped wafers |
US339,308 | 1989-04-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2001805A1 true CA2001805A1 (fr) | 1990-10-17 |
CA2001805C CA2001805C (fr) | 2000-06-27 |
Family
ID=23328426
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002001805A Expired - Lifetime CA2001805C (fr) | 1989-04-17 | 1989-10-30 | Methode et appareil de pluverisation cathodique de galettes en escalier |
Country Status (6)
Country | Link |
---|---|
US (1) | US4957605A (fr) |
EP (2) | EP0393957B1 (fr) |
JP (1) | JPH072989B2 (fr) |
KR (1) | KR0148007B1 (fr) |
CA (1) | CA2001805C (fr) |
DE (2) | DE69033686T2 (fr) |
Families Citing this family (83)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5126028A (en) * | 1989-04-17 | 1992-06-30 | Materials Research Corporation | Sputter coating process control method and apparatus |
US5080772A (en) * | 1990-08-24 | 1992-01-14 | Materials Research Corporation | Method of improving ion flux distribution uniformity on a substrate |
US5174875A (en) * | 1990-08-29 | 1992-12-29 | Materials Research Corporation | Method of enhancing the performance of a magnetron sputtering target |
US5284561A (en) * | 1991-11-13 | 1994-02-08 | Materials Research Corporation | Method and apparatus for sputter coating employing machine readable indicia carried by target assembly |
JP2529031B2 (ja) * | 1991-01-30 | 1996-08-28 | 株式会社芝浦製作所 | スパッタリング装置 |
DE9217937U1 (de) * | 1992-01-29 | 1993-04-01 | Leybold AG, 6450 Hanau | Vorrichtung zur Kathodenzerstäubung |
DE9310565U1 (de) * | 1993-07-15 | 1993-10-14 | Balzers Hochvakuum GmbH, 65205 Wiesbaden | Target für Kathodenzerstäubungsanlagen |
US5455197A (en) * | 1993-07-16 | 1995-10-03 | Materials Research Corporation | Control of the crystal orientation dependent properties of a film deposited on a semiconductor wafer |
US6605198B1 (en) * | 1993-07-22 | 2003-08-12 | Sputtered Films, Inc. | Apparatus for, and method of, depositing a film on a substrate |
JP2592217B2 (ja) * | 1993-11-11 | 1997-03-19 | 株式会社フロンテック | 高周波マグネトロンプラズマ装置 |
US5435881A (en) * | 1994-03-17 | 1995-07-25 | Ogle; John S. | Apparatus for producing planar plasma using varying magnetic poles |
EP0704878A1 (fr) * | 1994-09-27 | 1996-04-03 | Applied Materials, Inc. | DépÔt de film d'épaisseur uniforme de matériaux pulvérisés |
US5556525A (en) * | 1994-09-30 | 1996-09-17 | Advanced Micro Devices, Inc. | PVD sputter system having nonplanar target configuration and methods for operating same |
GB9425138D0 (en) | 1994-12-12 | 1995-02-08 | Dynal As | Isolation of nucleic acid |
US5512150A (en) * | 1995-03-09 | 1996-04-30 | Hmt Technology Corporation | Target assembly having inner and outer targets |
US5665214A (en) * | 1995-05-03 | 1997-09-09 | Sony Corporation | Automatic film deposition control method and system |
US6416635B1 (en) | 1995-07-24 | 2002-07-09 | Tokyo Electron Limited | Method and apparatus for sputter coating with variable target to substrate spacing |
DE19623359A1 (de) * | 1995-08-17 | 1997-02-20 | Leybold Ag | Vorrichtung zum Beschichten eines Substrats |
CH691643A5 (de) * | 1995-10-06 | 2001-08-31 | Unaxis Balzers Ag | Magnetronzerstäubungsquelle und deren Verwendung. |
DE19614598A1 (de) * | 1996-04-13 | 1997-10-16 | Singulus Technologies Gmbh | Vorrichtung zur Kathodenzerstäubung |
US5863399A (en) * | 1996-04-13 | 1999-01-26 | Singulus Technologies Gmbh | Device for cathode sputtering |
US6042706A (en) * | 1997-01-14 | 2000-03-28 | Applied Materials, Inc. | Ionized PVD source to produce uniform low-particle deposition |
US5985115A (en) * | 1997-04-11 | 1999-11-16 | Novellus Systems, Inc. | Internally cooled target assembly for magnetron sputtering |
GB9722648D0 (en) * | 1997-10-24 | 1997-12-24 | Univ Nanyang | ARC monitoring |
US6090246A (en) * | 1998-01-20 | 2000-07-18 | Micron Technology, Inc. | Methods and apparatus for detecting reflected neutrals in a sputtering process |
US6342131B1 (en) | 1998-04-17 | 2002-01-29 | Kabushiki Kaisha Toshiba | Method of depositing a multilayer thin film by means of magnetron sputtering which controls the magnetic field |
TW371108U (en) * | 1998-04-21 | 1999-09-21 | United Semiconductor Corp | Defected chip detecting tool |
US6217716B1 (en) | 1998-05-06 | 2001-04-17 | Novellus Systems, Inc. | Apparatus and method for improving target erosion in hollow cathode magnetron sputter source |
US6146509A (en) * | 1999-06-11 | 2000-11-14 | Scivac | Inverted field circular magnetron sputtering device |
US7069101B1 (en) | 1999-07-29 | 2006-06-27 | Applied Materials, Inc. | Computer integrated manufacturing techniques |
US6359388B1 (en) | 2000-08-28 | 2002-03-19 | Guardian Industries Corp. | Cold cathode ion beam deposition apparatus with segregated gas flow |
US7188142B2 (en) | 2000-11-30 | 2007-03-06 | Applied Materials, Inc. | Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility |
TWI229138B (en) * | 2001-06-12 | 2005-03-11 | Unaxis Balzers Ag | Magnetron-sputtering source |
US7082345B2 (en) | 2001-06-19 | 2006-07-25 | Applied Materials, Inc. | Method, system and medium for process control for the matching of tools, chambers and/or other semiconductor-related entities |
US7047099B2 (en) | 2001-06-19 | 2006-05-16 | Applied Materials Inc. | Integrating tool, module, and fab level control |
US7698012B2 (en) | 2001-06-19 | 2010-04-13 | Applied Materials, Inc. | Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing |
US7101799B2 (en) | 2001-06-19 | 2006-09-05 | Applied Materials, Inc. | Feedforward and feedback control for conditioning of chemical mechanical polishing pad |
US7160739B2 (en) | 2001-06-19 | 2007-01-09 | Applied Materials, Inc. | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
US7201936B2 (en) | 2001-06-19 | 2007-04-10 | Applied Materials, Inc. | Method of feedback control of sub-atmospheric chemical vapor deposition processes |
US6913938B2 (en) * | 2001-06-19 | 2005-07-05 | Applied Materials, Inc. | Feedback control of plasma-enhanced chemical vapor deposition processes |
US6910947B2 (en) | 2001-06-19 | 2005-06-28 | Applied Materials, Inc. | Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life |
US7337019B2 (en) | 2001-07-16 | 2008-02-26 | Applied Materials, Inc. | Integration of fault detection with run-to-run control |
US6950716B2 (en) * | 2001-08-13 | 2005-09-27 | Applied Materials, Inc. | Dynamic control of wafer processing paths in semiconductor manufacturing processes |
US6984198B2 (en) * | 2001-08-14 | 2006-01-10 | Applied Materials, Inc. | Experiment management system, method and medium |
US20030037090A1 (en) * | 2001-08-14 | 2003-02-20 | Koh Horne L. | Tool services layer for providing tool service functions in conjunction with tool functions |
US8110351B2 (en) | 2002-01-16 | 2012-02-07 | Invitrogen Dynal As | Method for isolating nucleic acids and protein from a single sample |
US7225047B2 (en) | 2002-03-19 | 2007-05-29 | Applied Materials, Inc. | Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements |
US6589398B1 (en) * | 2002-03-28 | 2003-07-08 | Novellus Systems, Inc. | Pasting method for eliminating flaking during nitride sputtering |
DE10234862A1 (de) * | 2002-07-31 | 2004-02-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Bipolar-Magnetronsputtern |
EP1546828A1 (fr) | 2002-08-01 | 2005-06-29 | Applied Materials, Inc. | Procede, systeme et support de manipulation de donnees de metrologie a mauvaise representation dans un systeme de commande de procede d'avant-garde |
US6988463B2 (en) * | 2002-10-18 | 2006-01-24 | Guardian Industries Corp. | Ion beam source with gas introduced directly into deposition/vacuum chamber |
US6812648B2 (en) | 2002-10-21 | 2004-11-02 | Guardian Industries Corp. | Method of cleaning ion source, and corresponding apparatus/system |
BE1015154A5 (fr) * | 2002-10-23 | 2004-10-05 | Alloys For Technical Applic S | Ensemble destine a la pulverisation cathodique magnetron. |
CN1720490B (zh) | 2002-11-15 | 2010-12-08 | 应用材料有限公司 | 用于控制具有多变量输入参数的制造工艺的方法和系统 |
US7333871B2 (en) | 2003-01-21 | 2008-02-19 | Applied Materials, Inc. | Automated design and execution of experiments with integrated model creation for semiconductor manufacturing tools |
US6811657B2 (en) | 2003-01-27 | 2004-11-02 | Micron Technology, Inc. | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same |
US7205228B2 (en) | 2003-06-03 | 2007-04-17 | Applied Materials, Inc. | Selective metal encapsulation schemes |
US7354332B2 (en) | 2003-08-04 | 2008-04-08 | Applied Materials, Inc. | Technique for process-qualifying a semiconductor manufacturing tool using metrology data |
US7273533B2 (en) | 2003-11-19 | 2007-09-25 | Tokyo Electron Limited | Plasma processing system with locally-efficient inductive plasma coupling |
US7356377B2 (en) | 2004-01-29 | 2008-04-08 | Applied Materials, Inc. | System, method, and medium for monitoring performance of an advanced process control system |
US6961626B1 (en) | 2004-05-28 | 2005-11-01 | Applied Materials, Inc | Dynamic offset and feedback threshold |
US7096085B2 (en) | 2004-05-28 | 2006-08-22 | Applied Materials | Process control by distinguishing a white noise component of a process variance |
WO2006006637A1 (fr) * | 2004-07-09 | 2006-01-19 | National Institute For Materials Science | Dispositif de pulvérisation cathodique a magnétron rendant une configuration de flux magnétique (type equilibre et type desequilibre) commutable et procédé de formation de film pour matériau de film mince inorganique utilisant ce dispositif, et dispositif de pulvérisation cat |
US7485210B2 (en) * | 2004-10-07 | 2009-02-03 | International Business Machines Corporation | Sputtering target fixture |
US20060207871A1 (en) | 2005-03-16 | 2006-09-21 | Gennady Yumshtyk | Sputtering devices and methods |
US20070074970A1 (en) * | 2005-09-20 | 2007-04-05 | Cp Technologies, Inc. | Device and method of manufacturing sputtering targets |
US7939181B2 (en) * | 2006-10-11 | 2011-05-10 | Oerlikon Trading Ag, Trubbach | Layer system with at least one mixed crystal layer of a multi-oxide |
EP1970465B1 (fr) | 2007-03-13 | 2013-08-21 | JDS Uniphase Corporation | Procédé et système de dépôt par pulvérisation pour le dépôt d'une couche composée d'un mélange de matériaux et disposant d'un index de réfraction prédéterminé |
US8322300B2 (en) * | 2008-02-07 | 2012-12-04 | Sunpower Corporation | Edge coating apparatus with movable roller applicator for solar cell substrates |
US8662008B2 (en) * | 2008-02-07 | 2014-03-04 | Sunpower Corporation | Edge coating apparatus for solar cell substrates |
KR20100006483A (ko) * | 2008-07-09 | 2010-01-19 | 삼성모바일디스플레이주식회사 | 자장 형성 제어 유니트 및 이를 갖는 마그네트론 스퍼터링장치, 자장 형성 제어 유니트를 사용한 마그네트론스퍼터링 방법 |
JP5343835B2 (ja) * | 2009-12-10 | 2013-11-13 | 日新イオン機器株式会社 | 反射電極構造体及びイオン源 |
US8398834B2 (en) * | 2010-04-02 | 2013-03-19 | NuvoSun, Inc. | Target utilization improvement for rotatable magnetrons |
JP5317038B2 (ja) * | 2011-04-05 | 2013-10-16 | 日新イオン機器株式会社 | イオン源及び反射電極構造体 |
US8575565B2 (en) | 2011-10-10 | 2013-11-05 | Guardian Industries Corp. | Ion source apparatus and methods of using the same |
JP6009171B2 (ja) * | 2012-02-14 | 2016-10-19 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6125247B2 (ja) * | 2012-03-21 | 2017-05-10 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
GB201306923D0 (en) * | 2013-04-17 | 2013-05-29 | Gencoa Ltd | Auto-tuning |
US9368330B2 (en) | 2014-05-02 | 2016-06-14 | Bh5773 Ltd | Sputtering targets and methods |
JP6896754B2 (ja) | 2016-03-05 | 2021-06-30 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 物理的気相堆積プロセスにおけるイオン分画を制御するための方法および装置 |
CN110066980A (zh) * | 2019-05-31 | 2019-07-30 | 德淮半导体有限公司 | 环状靶材部件、半导体工艺设备及其工作方法 |
US11894220B2 (en) | 2019-07-17 | 2024-02-06 | Applied Materials, Inc. | Method and apparatus for controlling a processing reactor |
CN112830686A (zh) * | 2021-01-21 | 2021-05-25 | 四川虹科创新科技有限公司 | 一种浮法玻璃表面硫膜控制装置及方法 |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3669871A (en) * | 1969-09-10 | 1972-06-13 | Ibm | Sputtering apparatus having a concave source cathode |
US3884793A (en) * | 1971-09-07 | 1975-05-20 | Telic Corp | Electrode type glow discharge apparatus |
US4041353A (en) * | 1971-09-07 | 1977-08-09 | Telic Corporation | Glow discharge method and apparatus |
US3878085A (en) * | 1973-07-05 | 1975-04-15 | Sloan Technology Corp | Cathode sputtering apparatus |
US4166018A (en) * | 1974-01-31 | 1979-08-28 | Airco, Inc. | Sputtering process and apparatus |
US3956093A (en) * | 1974-12-16 | 1976-05-11 | Airco, Inc. | Planar magnetron sputtering method and apparatus |
US4100055A (en) * | 1977-06-10 | 1978-07-11 | Varian Associates, Inc. | Target profile for sputtering apparatus |
US4166783A (en) * | 1978-04-17 | 1979-09-04 | Varian Associates, Inc. | Deposition rate regulation by computer control of sputtering systems |
JPS56152963A (en) * | 1980-04-30 | 1981-11-26 | Hitachi Ltd | Sputtering apparatus |
JPS56156766A (en) * | 1980-05-08 | 1981-12-03 | Fujitsu Ltd | Spattering device |
US4401539A (en) * | 1981-01-30 | 1983-08-30 | Hitachi, Ltd. | Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure |
JPS5810989A (ja) * | 1981-07-13 | 1983-01-21 | Hitachi Ltd | 遠方監視制御装置における反転試験方式 |
JPS58199860A (ja) * | 1982-05-17 | 1983-11-21 | Hitachi Ltd | 成膜方法 |
US4444635A (en) * | 1981-07-22 | 1984-04-24 | Hitachi, Ltd. | Film forming method |
US4416759A (en) * | 1981-11-27 | 1983-11-22 | Varian Associates, Inc. | Sputter system incorporating an improved blocking shield for contouring the thickness of sputter coated layers |
US4500408A (en) * | 1983-07-19 | 1985-02-19 | Varian Associates, Inc. | Apparatus for and method of controlling sputter coating |
US4500409A (en) * | 1983-07-19 | 1985-02-19 | Varian Associates, Inc. | Magnetron sputter coating source for both magnetic and non magnetic target materials |
JPS60152671A (ja) * | 1984-01-20 | 1985-08-10 | Anelva Corp | スパツタリング電極 |
CH659484A5 (de) * | 1984-04-19 | 1987-01-30 | Balzers Hochvakuum | Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung. |
US4569746A (en) * | 1984-05-17 | 1986-02-11 | Varian Associates, Inc. | Magnetron sputter device using the same pole piece for coupling separate confining magnetic fields to separate targets subject to separate discharges |
US4595482A (en) * | 1984-05-17 | 1986-06-17 | Varian Associates, Inc. | Apparatus for and the method of controlling magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges |
US4761218A (en) * | 1984-05-17 | 1988-08-02 | Varian Associates, Inc. | Sputter coating source having plural target rings |
US4606806A (en) * | 1984-05-17 | 1986-08-19 | Varian Associates, Inc. | Magnetron sputter device having planar and curved targets |
JPS6116347A (ja) * | 1984-07-02 | 1986-01-24 | Ricoh Co Ltd | メモリ走査装置 |
KR900001825B1 (ko) * | 1984-11-14 | 1990-03-24 | 가부시끼가이샤 히다찌세이사꾸쇼 | 성막 지향성을 고려한 스퍼터링장치 |
JPS61183467A (ja) * | 1985-02-08 | 1986-08-16 | Hitachi Ltd | スパッタリング方法及びその装置 |
JPS61238958A (ja) * | 1985-04-15 | 1986-10-24 | Hitachi Ltd | 複合薄膜形成法及び装置 |
JPS62107063A (ja) * | 1985-11-06 | 1987-05-18 | Hitachi Ltd | スパツタリング装置 |
JPS62211373A (ja) * | 1986-03-11 | 1987-09-17 | Matsushita Electric Ind Co Ltd | スパツタリング装置 |
US4855033A (en) * | 1986-04-04 | 1989-08-08 | Materials Research Corporation | Cathode and target design for a sputter coating apparatus |
CA1308060C (fr) * | 1986-04-04 | 1992-09-29 | Tokyo Electron Limited | Conception de cathode et de cible pour appareil d'enduction par pulverisation |
JPH0726204B2 (ja) * | 1986-04-16 | 1995-03-22 | 日本真空技術株式会社 | スパツタによる成膜制御装置 |
JPS637366A (ja) * | 1986-06-27 | 1988-01-13 | Matsushita Electric Ind Co Ltd | マグネトロンスパツタ装置 |
DE3624150C2 (de) * | 1986-07-17 | 1994-02-24 | Leybold Ag | Zerstäubungskatode nach dem Magnetronprinzip |
US4853102A (en) * | 1987-01-07 | 1989-08-01 | Hitachi, Ltd. | Sputtering process and an apparatus for carrying out the same |
US4810335A (en) * | 1987-01-20 | 1989-03-07 | Siemens Aktiengesellschaft | Method for monitoring etching processes |
US4834860A (en) * | 1987-07-01 | 1989-05-30 | The Boc Group, Inc. | Magnetron sputtering targets |
DE3727901A1 (de) * | 1987-08-21 | 1989-03-02 | Leybold Ag | Zerstaeubungskathode nach dem magnetronprinzip |
US4842703A (en) * | 1988-02-23 | 1989-06-27 | Eaton Corporation | Magnetron cathode and method for sputter coating |
US4820397A (en) * | 1988-04-04 | 1989-04-11 | Tosoh Smd, Inc. | Quick change sputter target assembly |
-
1989
- 1989-04-17 US US07/339,308 patent/US4957605A/en not_active Expired - Lifetime
- 1989-10-30 CA CA002001805A patent/CA2001805C/fr not_active Expired - Lifetime
- 1989-11-30 KR KR1019890017526A patent/KR0148007B1/ko not_active IP Right Cessation
- 1989-12-19 JP JP1329425A patent/JPH072989B2/ja not_active Expired - Lifetime
-
1990
- 1990-04-12 EP EP90304043A patent/EP0393957B1/fr not_active Expired - Lifetime
- 1990-04-12 DE DE69033686T patent/DE69033686T2/de not_active Expired - Lifetime
- 1990-04-12 EP EP90304044A patent/EP0393958B1/fr not_active Expired - Lifetime
- 1990-04-12 DE DE69033739T patent/DE69033739T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69033686T2 (de) | 2001-05-10 |
JPH02274874A (ja) | 1990-11-09 |
EP0393957B1 (fr) | 2001-05-30 |
DE69033739D1 (de) | 2001-07-05 |
EP0393958A3 (fr) | 1991-07-24 |
DE69033686D1 (de) | 2001-02-15 |
US4957605A (en) | 1990-09-18 |
CA2001805C (fr) | 2000-06-27 |
KR900017125A (ko) | 1990-11-15 |
EP0393957A2 (fr) | 1990-10-24 |
DE69033739T2 (de) | 2001-09-13 |
EP0393958A2 (fr) | 1990-10-24 |
KR0148007B1 (ko) | 1998-11-02 |
EP0393957A3 (fr) | 1991-07-24 |
JPH072989B2 (ja) | 1995-01-18 |
EP0393958B1 (fr) | 2001-01-10 |
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Legal Events
Date | Code | Title | Description |
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EEER | Examination request | ||
MKEX | Expiry |