CA1213680A - Rapid annealed boron implanted diodes - Google Patents

Rapid annealed boron implanted diodes

Info

Publication number
CA1213680A
CA1213680A CA000463510A CA463510A CA1213680A CA 1213680 A CA1213680 A CA 1213680A CA 000463510 A CA000463510 A CA 000463510A CA 463510 A CA463510 A CA 463510A CA 1213680 A CA1213680 A CA 1213680A
Authority
CA
Canada
Prior art keywords
polysilicon
resistor
activation energy
thermal activation
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000463510A
Other languages
English (en)
French (fr)
Inventor
Ronald R. Bourassa
Douglas B. Butler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inmos Corp
Original Assignee
Inmos Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inmos Corp filed Critical Inmos Corp
Application granted granted Critical
Publication of CA1213680A publication Critical patent/CA1213680A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
CA000463510A 1984-05-30 1984-09-18 Rapid annealed boron implanted diodes Expired CA1213680A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/615,166 US4560419A (en) 1984-05-30 1984-05-30 Method of making polysilicon resistors with a low thermal activation energy
US615,166 1984-05-30

Publications (1)

Publication Number Publication Date
CA1213680A true CA1213680A (en) 1986-11-04

Family

ID=24464276

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000463510A Expired CA1213680A (en) 1984-05-30 1984-09-18 Rapid annealed boron implanted diodes

Country Status (7)

Country Link
US (1) US4560419A (ko)
EP (1) EP0167249B1 (ko)
JP (1) JPS60262453A (ko)
KR (1) KR940001890B1 (ko)
AT (1) ATE51319T1 (ko)
CA (1) CA1213680A (ko)
DE (1) DE3576762D1 (ko)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4616404A (en) * 1984-11-30 1986-10-14 Advanced Micro Devices, Inc. Method of making improved lateral polysilicon diode by treating plasma etched sidewalls to remove defects
US4637836A (en) * 1985-09-23 1987-01-20 Rca Corporation Profile control of boron implant
JPH07101677B2 (ja) * 1985-12-02 1995-11-01 株式会社東芝 半導体装置の製造方法
US4745079A (en) * 1987-03-30 1988-05-17 Motorola, Inc. Method for fabricating MOS transistors having gates with different work functions
GB8710359D0 (en) * 1987-05-01 1987-06-03 Inmos Ltd Semiconductor element
US5248623A (en) * 1988-02-19 1993-09-28 Nippondenso Co., Ltd. Method for making a polycrystalline diode having high breakdown
JPH02185069A (ja) * 1988-12-02 1990-07-19 Motorola Inc 高エネルギー阻止能力及び温度補償された阻止電圧を具備する半導体デバイス
US5126279A (en) * 1988-12-19 1992-06-30 Micron Technology, Inc. Single polysilicon cross-coupled resistor, six-transistor SRAM cell design technique
US5196233A (en) * 1989-01-18 1993-03-23 Sgs-Thomson Microelectronics, Inc. Method for fabricating semiconductor circuits
US5065362A (en) * 1989-06-02 1991-11-12 Simtek Corporation Non-volatile ram with integrated compact static ram load configuration
US5151387A (en) 1990-04-30 1992-09-29 Sgs-Thomson Microelectronics, Inc. Polycrystalline silicon contact structure
US5141597A (en) * 1990-11-14 1992-08-25 United Technologies Corporation Thin polysilicon resistors
US5581159A (en) * 1992-04-07 1996-12-03 Micron Technology, Inc. Back-to-back diode current regulator for field emission display
JP2934738B2 (ja) * 1994-03-18 1999-08-16 セイコーインスツルメンツ株式会社 半導体装置およびその製造方法
US5847515A (en) * 1996-11-01 1998-12-08 Micron Technology, Inc. Field emission display having multiple brightness display modes
US6140684A (en) * 1997-06-24 2000-10-31 Stmicroelectronic, Inc. SRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacers
US6455392B2 (en) * 2000-01-21 2002-09-24 Bae Systems Information And Electrical Systems Integration, Inc. Integrated resistor having aligned body and contact and method for forming the same
US8072834B2 (en) * 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation
US7881118B2 (en) * 2007-05-25 2011-02-01 Cypress Semiconductor Corporation Sense transistor protection for memory programming
US8064255B2 (en) * 2007-12-31 2011-11-22 Cypress Semiconductor Corporation Architecture of a nvDRAM array and its sense regime
US8059458B2 (en) * 2007-12-31 2011-11-15 Cypress Semiconductor Corporation 3T high density nvDRAM cell

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH581904A5 (ko) * 1974-08-29 1976-11-15 Centre Electron Horloger
US3943545A (en) * 1975-05-22 1976-03-09 Fairchild Camera And Instrument Corporation Low interelectrode leakage structure for charge-coupled devices
JPS5810863B2 (ja) * 1978-04-24 1983-02-28 株式会社日立製作所 半導体装置
US4309224A (en) * 1978-10-06 1982-01-05 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device
US4214918A (en) * 1978-10-12 1980-07-29 Stanford University Method of forming polycrystalline semiconductor interconnections, resistors and contacts by applying radiation beam
US4290185A (en) * 1978-11-03 1981-09-22 Mostek Corporation Method of making an extremely low current load device for integrated circuit
JPS5688818A (en) * 1979-12-17 1981-07-18 Hitachi Ltd Polycrystalline silicon membrane and its production
JPS5687354A (en) * 1979-12-17 1981-07-15 Matsushita Electric Ind Co Ltd Formation of resistor body
US4331485A (en) * 1980-03-03 1982-05-25 Arnon Gat Method for heat treating semiconductor material using high intensity CW lamps
US4381201A (en) * 1980-03-11 1983-04-26 Fujitsu Limited Method for production of semiconductor devices
US4409724A (en) * 1980-11-03 1983-10-18 Texas Instruments Incorporated Method of fabricating display with semiconductor circuits on monolithic structure and flat panel display produced thereby
JPS57133661A (en) * 1981-02-10 1982-08-18 Matsushita Electric Ind Co Ltd Heat treatment for polycrystalline semiconductor
JPS57133660A (en) * 1981-02-10 1982-08-18 Matsushita Electric Ind Co Ltd Controlling method for resistance value of polycrystalline semiconductor
US4467518A (en) * 1981-05-19 1984-08-28 Ibm Corporation Process for fabrication of stacked, complementary MOS field effect transistor circuits
JPS5880852A (ja) * 1981-11-10 1983-05-16 Toshiba Corp 半導体装置の製造方法
US4467519A (en) * 1982-04-01 1984-08-28 International Business Machines Corporation Process for fabricating polycrystalline silicon film resistors
JPS5946057A (ja) * 1982-09-08 1984-03-15 Nec Corp 半導体装置の製造方法
US4658378A (en) * 1982-12-15 1987-04-14 Inmos Corporation Polysilicon resistor with low thermal activation energy
US4489104A (en) * 1983-06-03 1984-12-18 Industrial Technology Research Institute Polycrystalline silicon resistor having limited lateral diffusion

Also Published As

Publication number Publication date
EP0167249B1 (en) 1990-03-21
KR850008759A (ko) 1985-12-21
US4560419A (en) 1985-12-24
KR940001890B1 (ko) 1994-03-10
ATE51319T1 (de) 1990-04-15
DE3576762D1 (de) 1990-04-26
EP0167249A2 (en) 1986-01-08
EP0167249A3 (en) 1986-03-12
JPS60262453A (ja) 1985-12-25

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