CA1193757A - Lateral junction field effect transistor device - Google Patents

Lateral junction field effect transistor device

Info

Publication number
CA1193757A
CA1193757A CA000418649A CA418649A CA1193757A CA 1193757 A CA1193757 A CA 1193757A CA 000418649 A CA000418649 A CA 000418649A CA 418649 A CA418649 A CA 418649A CA 1193757 A CA1193757 A CA 1193757A
Authority
CA
Canada
Prior art keywords
layer
buried
gate
semiconductor layer
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000418649A
Other languages
English (en)
French (fr)
Inventor
Barry M. Singer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of CA1193757A publication Critical patent/CA1193757A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CA000418649A 1981-12-28 1982-12-24 Lateral junction field effect transistor device Expired CA1193757A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/334,997 US4485392A (en) 1981-12-28 1981-12-28 Lateral junction field effect transistor device
US334,997 1981-12-28

Publications (1)

Publication Number Publication Date
CA1193757A true CA1193757A (en) 1985-09-17

Family

ID=23309784

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000418649A Expired CA1193757A (en) 1981-12-28 1982-12-24 Lateral junction field effect transistor device

Country Status (5)

Country Link
US (1) US4485392A (en, 2012)
EP (1) EP0083815B1 (en, 2012)
JP (1) JPS58116776A (en, 2012)
CA (1) CA1193757A (en, 2012)
DE (1) DE3277159D1 (en, 2012)

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US4942440A (en) * 1982-10-25 1990-07-17 General Electric Company High voltage semiconductor devices with reduced on-resistance
NL8302092A (nl) * 1983-06-13 1985-01-02 Philips Nv Halfgeleiderinrichting bevattende een veldeffekttransistor.
JPS60140752A (ja) * 1983-12-28 1985-07-25 Olympus Optical Co Ltd 半導体光電変換装置
NL8400612A (nl) * 1984-02-28 1985-09-16 Cordis Europ Chemisch gevoelige fet-component.
EP0167813A1 (en) * 1984-06-08 1986-01-15 Eaton Corporation Multi-channel power JFET
US4633281A (en) * 1984-06-08 1986-12-30 Eaton Corporation Dual stack power JFET with buried field shaping depletion regions
US4670764A (en) * 1984-06-08 1987-06-02 Eaton Corporation Multi-channel power JFET with buried field shaping regions
US4635084A (en) * 1984-06-08 1987-01-06 Eaton Corporation Split row power JFET
EP0167810A1 (en) * 1984-06-08 1986-01-15 Eaton Corporation Power JFET with plural lateral pinching
JPS61136388A (ja) * 1984-11-21 1986-06-24 Olympus Optical Co Ltd 固体撮像装置
US4823173A (en) * 1986-01-07 1989-04-18 Harris Corporation High voltage lateral MOS structure with depleted top gate region
JPS63194368A (ja) * 1987-02-09 1988-08-11 Toshiba Corp 電界効果型トランジスタとその製造方法
JP2578600B2 (ja) * 1987-04-28 1997-02-05 オリンパス光学工業株式会社 半導体装置
US4868620A (en) * 1988-07-14 1989-09-19 Pacific Bell High-voltage pull-up device
SE500815C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Dielektriskt isolerad halvledaranordning och förfarande för dess framställning
SE500814C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
FR2708144A1 (fr) * 1993-07-22 1995-01-27 Philips Composants Dispositif intégré associant un transistor bipolaire à un transistor à effet de champ.
DE19701189B4 (de) * 1996-01-18 2005-06-30 International Rectifier Corp., El Segundo Halbleiterbauteil
JP3709668B2 (ja) * 1997-09-02 2005-10-26 ソニー株式会社 半導体装置とその製造方法
JP4526179B2 (ja) * 2000-11-21 2010-08-18 三菱電機株式会社 半導体装置
JP3812421B2 (ja) * 2001-06-14 2006-08-23 住友電気工業株式会社 横型接合型電界効果トランジスタ
JP4610865B2 (ja) * 2003-05-30 2011-01-12 パナソニック株式会社 半導体装置及びその製造方法
US7026669B2 (en) * 2004-06-03 2006-04-11 Ranbir Singh Lateral channel transistor
JP2006202860A (ja) * 2005-01-19 2006-08-03 Toshiba Corp 半導体装置及びその製造方法
US7592841B2 (en) * 2006-05-11 2009-09-22 Dsm Solutions, Inc. Circuit configurations having four terminal JFET devices
JP5168773B2 (ja) * 2005-11-14 2013-03-27 住友電気工業株式会社 横型接合型電界効果トランジスタ
US20080099796A1 (en) * 2006-11-01 2008-05-01 Vora Madhukar B Device with patterned semiconductor electrode structure and method of manufacture
JP4751308B2 (ja) * 2006-12-18 2011-08-17 住友電気工業株式会社 横型接合型電界効果トランジスタ
US20080237657A1 (en) * 2007-03-26 2008-10-02 Dsm Solution, Inc. Signaling circuit and method for integrated circuit devices and systems
US7737526B2 (en) * 2007-03-28 2010-06-15 Advanced Analogic Technologies, Inc. Isolated trench MOSFET in epi-less semiconductor sustrate
US20080265936A1 (en) * 2007-04-27 2008-10-30 Dsm Solutions, Inc. Integrated circuit switching device, structure and method of manufacture
US7692220B2 (en) * 2007-05-01 2010-04-06 Suvolta, Inc. Semiconductor device storage cell structure, method of operation, and method of manufacture
US7727821B2 (en) * 2007-05-01 2010-06-01 Suvolta, Inc. Image sensing cell, device, method of operation, and method of manufacture
US7629812B2 (en) * 2007-08-03 2009-12-08 Dsm Solutions, Inc. Switching circuits and methods for programmable logic devices
JP2009043923A (ja) * 2007-08-08 2009-02-26 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US20090168508A1 (en) * 2007-12-31 2009-07-02 Dsm Solutions, Inc. Static random access memory having cells with junction field effect and bipolar junction transistors
US7710148B2 (en) * 2008-06-02 2010-05-04 Suvolta, Inc. Programmable switch circuit and method, method of manufacture, and devices and systems including the same
JP5764742B2 (ja) * 2010-05-17 2015-08-19 パナソニックＩｐマネジメント株式会社 接合型電界効果トランジスタ、その製造方法及びアナログ回路
US20190131404A1 (en) * 2017-10-30 2019-05-02 Analog Devices Global Unlimited Company Low gate current junction field effect transistor device architecture
TWI763027B (zh) * 2020-09-08 2022-05-01 新唐科技股份有限公司 接面場效電晶體

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123432B2 (en, 2012) * 1971-08-26 1976-07-16
US4066917A (en) * 1976-05-03 1978-01-03 National Semiconductor Corporation Circuit combining bipolar transistor and JFET's to produce a constant voltage characteristic
JPS5367368A (en) * 1976-11-29 1978-06-15 Sony Corp Semiconductor device
JPS5412680A (en) * 1977-06-30 1979-01-30 Matsushita Electric Ind Co Ltd Junction-type field effect transistor and its manufacture
US4143392A (en) * 1977-08-30 1979-03-06 Signetics Corporation Composite jfet-bipolar structure
NL184552C (nl) * 1978-07-24 1989-08-16 Philips Nv Halfgeleiderinrichting voor hoge spanningen.
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
US4374389A (en) * 1978-06-06 1983-02-15 General Electric Company High breakdown voltage semiconductor device
US4314267A (en) * 1978-06-13 1982-02-02 Ibm Corporation Dense high performance JFET compatible with NPN transistor formation and merged BIFET
JPS55153365A (en) * 1979-05-17 1980-11-29 Toshiba Corp Manufacturing method of semiconductor device
JPS55153378A (en) * 1979-05-18 1980-11-29 Matsushita Electronics Corp Field effect transistor
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device

Also Published As

Publication number Publication date
EP0083815B1 (en) 1987-09-02
EP0083815A2 (en) 1983-07-20
EP0083815A3 (en) 1985-04-03
US4485392A (en) 1984-11-27
JPS58116776A (ja) 1983-07-12
DE3277159D1 (en) 1987-10-08
JPH0357614B2 (en, 2012) 1991-09-02

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Legal Events

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MKEX Expiry