CA1155236A - Transistor having improved turn-off time and second breakdown characteristics - Google Patents
Transistor having improved turn-off time and second breakdown characteristicsInfo
- Publication number
- CA1155236A CA1155236A CA000331749A CA331749A CA1155236A CA 1155236 A CA1155236 A CA 1155236A CA 000331749 A CA000331749 A CA 000331749A CA 331749 A CA331749 A CA 331749A CA 1155236 A CA1155236 A CA 1155236A
- Authority
- CA
- Canada
- Prior art keywords
- emitter
- turn
- current
- major face
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015556 catabolic process Effects 0.000 title abstract description 10
- 230000001976 improved effect Effects 0.000 title abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000006872 improvement Effects 0.000 claims description 6
- 230000001965 increasing effect Effects 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims 3
- 239000002800 charge carrier Substances 0.000 abstract description 3
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 208000003251 Pruritus Diseases 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000007803 itching Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 241000347889 Debia Species 0.000 description 1
- 241000490229 Eucephalus Species 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- OCYROESYHWUPBP-CIUDSAMLSA-N Pro-Ile Chemical compound CC[C@H](C)[C@@H](C([O-])=O)NC(=O)[C@@H]1CCC[NH2+]1 OCYROESYHWUPBP-CIUDSAMLSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 108010015796 prolylisoleucine Proteins 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US92645078A | 1978-07-20 | 1978-07-20 | |
| US926,450 | 1978-07-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1155236A true CA1155236A (en) | 1983-10-11 |
Family
ID=25453225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000331749A Expired CA1155236A (en) | 1978-07-20 | 1979-07-13 | Transistor having improved turn-off time and second breakdown characteristics |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5522892A (xx) |
| CA (1) | CA1155236A (xx) |
| DE (1) | DE2929133A1 (xx) |
| FR (1) | FR2438341A1 (xx) |
| GB (1) | GB2026236B (xx) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0064614B1 (en) * | 1981-04-30 | 1987-09-16 | Kabushiki Kaisha Toshiba | Improved emitter structure for semiconductor devices |
| JPS589369A (ja) * | 1981-07-08 | 1983-01-19 | Matsushita Electronics Corp | トランジスタ |
| JPS5818964A (ja) * | 1981-07-28 | 1983-02-03 | Fujitsu Ltd | 半導体装置 |
| US4460913A (en) * | 1981-10-30 | 1984-07-17 | Rca Corporation | Fast switching transistor |
| FR2528233A1 (fr) * | 1982-06-08 | 1983-12-09 | Thomson Csf | Structure de doigt d'emetteur dans un transistor de commutation |
| JPS6457752A (en) * | 1987-08-28 | 1989-03-06 | Nec Corp | Semiconductor device |
| KR970024275A (ko) * | 1995-10-10 | 1997-05-30 | 김광호 | 안전 동작 영역을 증가시킨 트랜지스터 및 그 제조 방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3300694A (en) * | 1962-12-20 | 1967-01-24 | Westinghouse Electric Corp | Semiconductor controlled rectifier with firing pin portion on emitter |
| FR1519530A (fr) * | 1965-03-17 | 1968-04-05 | Rca Corp | Dispositif semi-conducteur |
| DE1514008B2 (de) * | 1965-04-22 | 1972-12-07 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Flaechentransistor |
| US3347720A (en) * | 1965-10-21 | 1967-10-17 | Bendix Corp | Method of forming a semiconductor by masking and diffusion |
| FR2374743A1 (fr) * | 1976-12-20 | 1978-07-13 | Radiotechnique Compelec | Transistor multicouche a emetteur compose |
-
1979
- 1979-06-26 GB GB7922191A patent/GB2026236B/en not_active Expired
- 1979-07-13 CA CA000331749A patent/CA1155236A/en not_active Expired
- 1979-07-17 JP JP8994379A patent/JPS5522892A/ja active Pending
- 1979-07-19 FR FR7918682A patent/FR2438341A1/fr active Granted
- 1979-07-19 DE DE19792929133 patent/DE2929133A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2026236A (en) | 1980-01-30 |
| DE2929133C2 (xx) | 1987-05-14 |
| FR2438341B1 (xx) | 1984-01-27 |
| JPS5522892A (en) | 1980-02-18 |
| FR2438341A1 (fr) | 1980-04-30 |
| GB2026236B (en) | 1983-02-02 |
| DE2929133A1 (de) | 1980-01-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |