FR2438341A1 - Transistor de commutation perfectionne - Google Patents

Transistor de commutation perfectionne

Info

Publication number
FR2438341A1
FR2438341A1 FR7918682A FR7918682A FR2438341A1 FR 2438341 A1 FR2438341 A1 FR 2438341A1 FR 7918682 A FR7918682 A FR 7918682A FR 7918682 A FR7918682 A FR 7918682A FR 2438341 A1 FR2438341 A1 FR 2438341A1
Authority
FR
France
Prior art keywords
region
base
switching transistor
transmitter
improved switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7918682A
Other languages
English (en)
Other versions
FR2438341B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2438341A1 publication Critical patent/FR2438341A1/fr
Application granted granted Critical
Publication of FR2438341B1 publication Critical patent/FR2438341B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

TRANSISTOR A RAPIDITE DE COMMUTATION ACCRUE ET SUSCEPTIBILITE REDUITE A LA SECONDE RUPTURE EN INVERSE. IL COMPREND UN EMETTEUR 26 AYANT UNE PREMIERE ET UNE SECONDE REGION, LA MAJEURE PARTIE DE CETTE PREMIERE REGION ETANT ENTOUREE PAR LA SECONDE REGION, ET CARRACTERISEE PAR UN GAIN INFERIEUR A CELUI DE CETTE SECONDE REGION, CES PREMIERE ET SECONDE REGIONS ETANT ENTOUREES AU MOINS EN PARTIE PAR UNE REGION DE BASE 24, LA REGION DE BASE COMPRENANT UNE ELECTRODE 28, OU, LORS DE L'APPLICATION D'UN SIGNAL D'AMORCAGE A L'ELECTRODE DE BASE, MOINS DE COURANT CIRCULE SOUS LA PREMIERE REGION D'EMETTEUR QUE SOUS LA SECONDE REGION. APPLICATION AUX CONVERTISSEURS.
FR7918682A 1978-07-20 1979-07-19 Transistor de commutation perfectionne Granted FR2438341A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92645078A 1978-07-20 1978-07-20

Publications (2)

Publication Number Publication Date
FR2438341A1 true FR2438341A1 (fr) 1980-04-30
FR2438341B1 FR2438341B1 (fr) 1984-01-27

Family

ID=25453225

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7918682A Granted FR2438341A1 (fr) 1978-07-20 1979-07-19 Transistor de commutation perfectionne

Country Status (5)

Country Link
JP (1) JPS5522892A (fr)
CA (1) CA1155236A (fr)
DE (1) DE2929133C2 (fr)
FR (1) FR2438341A1 (fr)
GB (1) GB2026236B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3277352D1 (en) * 1981-04-30 1987-10-22 Toshiba Kk Improved emitter structure for semiconductor devices
JPS589369A (ja) * 1981-07-08 1983-01-19 Matsushita Electronics Corp トランジスタ
JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
US4460913A (en) * 1981-10-30 1984-07-17 Rca Corporation Fast switching transistor
FR2528233A1 (fr) * 1982-06-08 1983-12-09 Thomson Csf Structure de doigt d'emetteur dans un transistor de commutation
JPS6457752A (en) * 1987-08-28 1989-03-06 Nec Corp Semiconductor device
KR970024275A (ko) * 1995-10-10 1997-05-30 김광호 안전 동작 영역을 증가시킨 트랜지스터 및 그 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1477106A (fr) * 1965-04-22 1967-04-14 Itt Transistor à jonction
FR1519530A (fr) * 1965-03-17 1968-04-05 Rca Corp Dispositif semi-conducteur
DE1514875A1 (de) * 1965-09-18 1969-11-06 Telefunken Patent Halbleiteranordnung
FR2374743A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche a emetteur compose

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3300694A (en) * 1962-12-20 1967-01-24 Westinghouse Electric Corp Semiconductor controlled rectifier with firing pin portion on emitter
US3347720A (en) * 1965-10-21 1967-10-17 Bendix Corp Method of forming a semiconductor by masking and diffusion

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1519530A (fr) * 1965-03-17 1968-04-05 Rca Corp Dispositif semi-conducteur
FR1477106A (fr) * 1965-04-22 1967-04-14 Itt Transistor à jonction
US3453503A (en) * 1965-04-22 1969-07-01 Egon Schulz Multiple emitter transistor with improved frequency and power characteristics
DE1514875A1 (de) * 1965-09-18 1969-11-06 Telefunken Patent Halbleiteranordnung
FR2374743A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche a emetteur compose

Also Published As

Publication number Publication date
CA1155236A (fr) 1983-10-11
DE2929133A1 (de) 1980-01-31
FR2438341B1 (fr) 1984-01-27
DE2929133C2 (de) 1987-05-14
GB2026236A (en) 1980-01-30
GB2026236B (en) 1983-02-02
JPS5522892A (en) 1980-02-18

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Legal Events

Date Code Title Description
ST Notification of lapse