GB2026236B - Power transistor - Google Patents

Power transistor

Info

Publication number
GB2026236B
GB2026236B GB7922191A GB7922191A GB2026236B GB 2026236 B GB2026236 B GB 2026236B GB 7922191 A GB7922191 A GB 7922191A GB 7922191 A GB7922191 A GB 7922191A GB 2026236 B GB2026236 B GB 2026236B
Authority
GB
United Kingdom
Prior art keywords
power transistor
transistor
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7922191A
Other languages
English (en)
Other versions
GB2026236A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB2026236A publication Critical patent/GB2026236A/en
Application granted granted Critical
Publication of GB2026236B publication Critical patent/GB2026236B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
GB7922191A 1978-07-20 1979-06-26 Power transistor Expired GB2026236B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92645078A 1978-07-20 1978-07-20

Publications (2)

Publication Number Publication Date
GB2026236A GB2026236A (en) 1980-01-30
GB2026236B true GB2026236B (en) 1983-02-02

Family

ID=25453225

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7922191A Expired GB2026236B (en) 1978-07-20 1979-06-26 Power transistor

Country Status (5)

Country Link
JP (1) JPS5522892A (fr)
CA (1) CA1155236A (fr)
DE (1) DE2929133C2 (fr)
FR (1) FR2438341A1 (fr)
GB (1) GB2026236B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3277352D1 (en) * 1981-04-30 1987-10-22 Toshiba Kk Improved emitter structure for semiconductor devices
JPS589369A (ja) * 1981-07-08 1983-01-19 Matsushita Electronics Corp トランジスタ
JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
US4460913A (en) * 1981-10-30 1984-07-17 Rca Corporation Fast switching transistor
FR2528233A1 (fr) * 1982-06-08 1983-12-09 Thomson Csf Structure de doigt d'emetteur dans un transistor de commutation
JPS6457752A (en) * 1987-08-28 1989-03-06 Nec Corp Semiconductor device
KR970024275A (ko) * 1995-10-10 1997-05-30 김광호 안전 동작 영역을 증가시킨 트랜지스터 및 그 제조 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3300694A (en) * 1962-12-20 1967-01-24 Westinghouse Electric Corp Semiconductor controlled rectifier with firing pin portion on emitter
FR1519530A (fr) * 1965-03-17 1968-04-05 Rca Corp Dispositif semi-conducteur
DE1514008B2 (de) * 1965-04-22 1972-12-07 Deutsche Itt Industries Gmbh, 7800 Freiburg Flaechentransistor
US3347720A (en) * 1965-10-21 1967-10-17 Bendix Corp Method of forming a semiconductor by masking and diffusion
FR2374743A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche a emetteur compose

Also Published As

Publication number Publication date
CA1155236A (fr) 1983-10-11
DE2929133A1 (de) 1980-01-31
FR2438341B1 (fr) 1984-01-27
DE2929133C2 (de) 1987-05-14
FR2438341A1 (fr) 1980-04-30
GB2026236A (en) 1980-01-30
JPS5522892A (en) 1980-02-18

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 19990625