JPS5522892A - Switching transistor - Google Patents

Switching transistor

Info

Publication number
JPS5522892A
JPS5522892A JP8994379A JP8994379A JPS5522892A JP S5522892 A JPS5522892 A JP S5522892A JP 8994379 A JP8994379 A JP 8994379A JP 8994379 A JP8994379 A JP 8994379A JP S5522892 A JPS5522892 A JP S5522892A
Authority
JP
Japan
Prior art keywords
switching transistor
transistor
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8994379A
Other languages
Japanese (ja)
Inventor
Ouyangu Kingu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS5522892A publication Critical patent/JPS5522892A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
JP8994379A 1978-07-20 1979-07-17 Switching transistor Pending JPS5522892A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92645078A 1978-07-20 1978-07-20

Publications (1)

Publication Number Publication Date
JPS5522892A true JPS5522892A (en) 1980-02-18

Family

ID=25453225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8994379A Pending JPS5522892A (en) 1978-07-20 1979-07-17 Switching transistor

Country Status (5)

Country Link
JP (1) JPS5522892A (en)
CA (1) CA1155236A (en)
DE (1) DE2929133C2 (en)
FR (1) FR2438341A1 (en)
GB (1) GB2026236B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589369A (en) * 1981-07-08 1983-01-19 Matsushita Electronics Corp Transistor
JPS5818964A (en) * 1981-07-28 1983-02-03 Fujitsu Ltd Semiconductor device
JPS6457752A (en) * 1987-08-28 1989-03-06 Nec Corp Semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3277352D1 (en) * 1981-04-30 1987-10-22 Toshiba Kk Improved emitter structure for semiconductor devices
US4460913A (en) * 1981-10-30 1984-07-17 Rca Corporation Fast switching transistor
FR2528233A1 (en) * 1982-06-08 1983-12-09 Thomson Csf TRANSMITTER FINGER STRUCTURE IN A SWITCHING TRANSISTOR
KR970024275A (en) * 1995-10-10 1997-05-30 김광호 Transistor with increased safe operating area and manufacturing method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3300694A (en) * 1962-12-20 1967-01-24 Westinghouse Electric Corp Semiconductor controlled rectifier with firing pin portion on emitter
FR1519530A (en) * 1965-03-17 1968-04-05 Rca Corp Semiconductor device
DE1514008B2 (en) * 1965-04-22 1972-12-07 Deutsche Itt Industries Gmbh, 7800 Freiburg AREA TRANSISTOR
US3347720A (en) * 1965-10-21 1967-10-17 Bendix Corp Method of forming a semiconductor by masking and diffusion
FR2374743A1 (en) * 1976-12-20 1978-07-13 Radiotechnique Compelec MULTI-LAYER TRANSISTOR WITH COMPOUND EMITTER

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ELECTRONIC DESIGN=1966 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589369A (en) * 1981-07-08 1983-01-19 Matsushita Electronics Corp Transistor
JPS5818964A (en) * 1981-07-28 1983-02-03 Fujitsu Ltd Semiconductor device
JPH0156531B2 (en) * 1981-07-28 1989-11-30 Fujitsu Ltd
JPS6457752A (en) * 1987-08-28 1989-03-06 Nec Corp Semiconductor device
JPH0581172B2 (en) * 1987-08-28 1993-11-11 Nippon Electric Co

Also Published As

Publication number Publication date
CA1155236A (en) 1983-10-11
DE2929133A1 (en) 1980-01-31
FR2438341B1 (en) 1984-01-27
DE2929133C2 (en) 1987-05-14
FR2438341A1 (en) 1980-04-30
GB2026236A (en) 1980-01-30
GB2026236B (en) 1983-02-02

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