GB2026236B - Power transistor - Google Patents
Power transistorInfo
- Publication number
- GB2026236B GB2026236B GB7922191A GB7922191A GB2026236B GB 2026236 B GB2026236 B GB 2026236B GB 7922191 A GB7922191 A GB 7922191A GB 7922191 A GB7922191 A GB 7922191A GB 2026236 B GB2026236 B GB 2026236B
- Authority
- GB
- United Kingdom
- Prior art keywords
- power transistor
- transistor
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US92645078A | 1978-07-20 | 1978-07-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2026236A GB2026236A (en) | 1980-01-30 |
| GB2026236B true GB2026236B (en) | 1983-02-02 |
Family
ID=25453225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7922191A Expired GB2026236B (en) | 1978-07-20 | 1979-06-26 | Power transistor |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5522892A (xx) |
| CA (1) | CA1155236A (xx) |
| DE (1) | DE2929133A1 (xx) |
| FR (1) | FR2438341A1 (xx) |
| GB (1) | GB2026236B (xx) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0064614B1 (en) * | 1981-04-30 | 1987-09-16 | Kabushiki Kaisha Toshiba | Improved emitter structure for semiconductor devices |
| JPS589369A (ja) * | 1981-07-08 | 1983-01-19 | Matsushita Electronics Corp | トランジスタ |
| JPS5818964A (ja) * | 1981-07-28 | 1983-02-03 | Fujitsu Ltd | 半導体装置 |
| US4460913A (en) * | 1981-10-30 | 1984-07-17 | Rca Corporation | Fast switching transistor |
| FR2528233A1 (fr) * | 1982-06-08 | 1983-12-09 | Thomson Csf | Structure de doigt d'emetteur dans un transistor de commutation |
| JPS6457752A (en) * | 1987-08-28 | 1989-03-06 | Nec Corp | Semiconductor device |
| KR970024275A (ko) * | 1995-10-10 | 1997-05-30 | 김광호 | 안전 동작 영역을 증가시킨 트랜지스터 및 그 제조 방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3300694A (en) * | 1962-12-20 | 1967-01-24 | Westinghouse Electric Corp | Semiconductor controlled rectifier with firing pin portion on emitter |
| FR1519530A (fr) * | 1965-03-17 | 1968-04-05 | Rca Corp | Dispositif semi-conducteur |
| DE1514008B2 (de) * | 1965-04-22 | 1972-12-07 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Flaechentransistor |
| US3347720A (en) * | 1965-10-21 | 1967-10-17 | Bendix Corp | Method of forming a semiconductor by masking and diffusion |
| FR2374743A1 (fr) * | 1976-12-20 | 1978-07-13 | Radiotechnique Compelec | Transistor multicouche a emetteur compose |
-
1979
- 1979-06-26 GB GB7922191A patent/GB2026236B/en not_active Expired
- 1979-07-13 CA CA000331749A patent/CA1155236A/en not_active Expired
- 1979-07-17 JP JP8994379A patent/JPS5522892A/ja active Pending
- 1979-07-19 FR FR7918682A patent/FR2438341A1/fr active Granted
- 1979-07-19 DE DE19792929133 patent/DE2929133A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2026236A (en) | 1980-01-30 |
| DE2929133C2 (xx) | 1987-05-14 |
| FR2438341B1 (xx) | 1984-01-27 |
| JPS5522892A (en) | 1980-02-18 |
| FR2438341A1 (fr) | 1980-04-30 |
| DE2929133A1 (de) | 1980-01-31 |
| CA1155236A (en) | 1983-10-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PE20 | Patent expired after termination of 20 years |
Effective date: 19990625 |