CA1115426A - Dispositif mos a rainure en u - Google Patents
Dispositif mos a rainure en uInfo
- Publication number
- CA1115426A CA1115426A CA335,319A CA335319A CA1115426A CA 1115426 A CA1115426 A CA 1115426A CA 335319 A CA335319 A CA 335319A CA 1115426 A CA1115426 A CA 1115426A
- Authority
- CA
- Canada
- Prior art keywords
- recess
- mos
- semiconductor device
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 19
- 239000013078 crystal Substances 0.000 claims description 20
- 239000002210 silicon-based material Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 15
- 239000010703 silicon Substances 0.000 abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 14
- 101150068246 V-MOS gene Proteins 0.000 description 27
- 238000005530 etching Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US94881478A | 1978-10-05 | 1978-10-05 | |
| US948,814 | 1978-10-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1115426A true CA1115426A (fr) | 1981-12-29 |
Family
ID=25488272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA335,319A Expired CA1115426A (fr) | 1978-10-05 | 1979-09-10 | Dispositif mos a rainure en u |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5552273A (fr) |
| CA (1) | CA1115426A (fr) |
| DE (1) | DE2931272A1 (fr) |
| FR (1) | FR2438342A1 (fr) |
| GB (1) | GB2032686A (fr) |
| IT (1) | IT1123772B (fr) |
| NL (1) | NL7905402A (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4449285A (en) * | 1981-08-19 | 1984-05-22 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Method for producing a vertical channel transistor |
| US4546367A (en) * | 1982-06-21 | 1985-10-08 | Eaton Corporation | Lateral bidirectional notch FET with extended gate insulator |
| JPS598375A (ja) * | 1982-07-05 | 1984-01-17 | Matsushita Electronics Corp | 縦型構造電界効果トランジスタ |
| US5034785A (en) * | 1986-03-24 | 1991-07-23 | Siliconix Incorporated | Planar vertical channel DMOS structure |
| US4767722A (en) * | 1986-03-24 | 1988-08-30 | Siliconix Incorporated | Method for making planar vertical channel DMOS structures |
| US6335247B1 (en) * | 2000-06-19 | 2002-01-01 | Infineon Technologies Ag | Integrated circuit vertical trench device and method of forming thereof |
| JP3531613B2 (ja) | 2001-02-06 | 2004-05-31 | 株式会社デンソー | トレンチゲート型半導体装置及びその製造方法 |
-
1979
- 1979-07-11 NL NL7905402A patent/NL7905402A/nl not_active Application Discontinuation
- 1979-08-01 DE DE19792931272 patent/DE2931272A1/de not_active Withdrawn
- 1979-08-31 JP JP11054279A patent/JPS5552273A/ja active Pending
- 1979-09-10 CA CA335,319A patent/CA1115426A/fr not_active Expired
- 1979-09-14 GB GB7932015A patent/GB2032686A/en not_active Withdrawn
- 1979-10-04 FR FR7924747A patent/FR2438342A1/fr not_active Withdrawn
- 1979-10-04 IT IT26258/79A patent/IT1123772B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| DE2931272A1 (de) | 1980-04-24 |
| FR2438342A1 (fr) | 1980-04-30 |
| NL7905402A (nl) | 1980-04-09 |
| GB2032686A (en) | 1980-05-08 |
| JPS5552273A (en) | 1980-04-16 |
| IT7926258A0 (it) | 1979-10-04 |
| IT1123772B (it) | 1986-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0051632B1 (fr) | Circuits integrés sémiconducteurs | |
| KR890004469B1 (ko) | 종형 mosfet와 그 제조방법 | |
| US6498368B2 (en) | Power semiconductor device | |
| US4663644A (en) | Semiconductor device and method of manufacturing the same | |
| KR900001225B1 (ko) | 반도체기억장치와 그 제조방법 | |
| US6875641B2 (en) | Three-dimensional memory | |
| EP0042084A1 (fr) | Dispositif à semiconducteurs, en particulier cellule de mémoire, en technologie VMOS | |
| EP0174185A2 (fr) | Dispositif semi-conducteur et procédé pour sa fabrication | |
| KR20020022630A (ko) | 낮은 저항 소스 영역들과 높은 소스 연결을 갖춘 부동게이트 메모리 셀들의 반도체 메모리 어레이를 형성하는자기 정렬 방법 및, 그에의해 만들어진 메모리 어레이 | |
| US4630237A (en) | Read-only memory and method of manufacturing the same | |
| JPS6014510B2 (ja) | Ｖ−ｍｏｓダイナミツク半導体装置の製造方法 | |
| JPH07115192A (ja) | 垂直形ｍｏｓトランジスタの製造方法 | |
| US4763180A (en) | Method and structure for a high density VMOS dynamic ram array | |
| US4949138A (en) | Semiconductor integrated circuit device | |
| CA1115426A (fr) | Dispositif mos a rainure en u | |
| CN113130492A (zh) | 半导体结构及器件 | |
| US6876014B2 (en) | Interconnection structure of a semiconductor device | |
| US6872994B2 (en) | Semiconductor device having an active region whose width varies | |
| JPS59113669A (ja) | 半導体素子 | |
| CN114899188A (zh) | 一种半导体结构及制备方法 | |
| US4438448A (en) | Zig-zag V-MOS transistor structure | |
| KR20210064593A (ko) | 반도체 장치 | |
| CN216435904U (zh) | 半导体装置 | |
| CN212113728U (zh) | 金属氧化物半导体场效晶体管 | |
| US4620213A (en) | Deep-grid semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |