CA1115426A - Dispositif mos a rainure en u - Google Patents

Dispositif mos a rainure en u

Info

Publication number
CA1115426A
CA1115426A CA335,319A CA335319A CA1115426A CA 1115426 A CA1115426 A CA 1115426A CA 335319 A CA335319 A CA 335319A CA 1115426 A CA1115426 A CA 1115426A
Authority
CA
Canada
Prior art keywords
recess
mos
semiconductor device
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA335,319A
Other languages
English (en)
Inventor
Elie S. Ammar
Thurman J. Rodgers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
American Microsystems Holding Corp
Original Assignee
American Microsystems Holding Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Microsystems Holding Corp filed Critical American Microsystems Holding Corp
Application granted granted Critical
Publication of CA1115426A publication Critical patent/CA1115426A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356Disposition, e.g. buried gate electrode
    • H01L29/4236Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827Vertical transistors

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
CA335,319A 1978-10-05 1979-09-10 Dispositif mos a rainure en u Expired CA1115426A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US94881478A 1978-10-05 1978-10-05
US948,814 1978-10-05

Publications (1)

Publication Number Publication Date
CA1115426A true CA1115426A (fr) 1981-12-29

Family

ID=25488272

Family Applications (1)

Application Number Title Priority Date Filing Date
CA335,319A Expired CA1115426A (fr) 1978-10-05 1979-09-10 Dispositif mos a rainure en u

Country Status (7)

Country Link
JP (1) JPS5552273A (fr)
CA (1) CA1115426A (fr)
DE (1) DE2931272A1 (fr)
FR (1) FR2438342A1 (fr)
GB (1) GB2032686A (fr)
IT (1) IT1123772B (fr)
NL (1) NL7905402A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4449285A (en) * 1981-08-19 1984-05-22 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Method for producing a vertical channel transistor
US4546367A (en) * 1982-06-21 1985-10-08 Eaton Corporation Lateral bidirectional notch FET with extended gate insulator
JPS598375A (ja) * 1982-07-05 1984-01-17 Matsushita Electronics Corp 縦型構造電界効果トランジスタ
US5034785A (en) * 1986-03-24 1991-07-23 Siliconix Incorporated Planar vertical channel DMOS structure
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US6335247B1 (en) * 2000-06-19 2002-01-01 Infineon Technologies Ag Integrated circuit vertical trench device and method of forming thereof
JP3531613B2 (ja) 2001-02-06 2004-05-31 株式会社デンソー トレンチゲート型半導体装置及びその製造方法

Also Published As

Publication number Publication date
FR2438342A1 (fr) 1980-04-30
NL7905402A (nl) 1980-04-09
DE2931272A1 (de) 1980-04-24
GB2032686A (en) 1980-05-08
IT7926258A0 (it) 1979-10-04
IT1123772B (it) 1986-04-30
JPS5552273A (en) 1980-04-16

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Legal Events

Date Code Title Description
MKEX Expiry