JPS5552273A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5552273A JPS5552273A JP11054279A JP11054279A JPS5552273A JP S5552273 A JPS5552273 A JP S5552273A JP 11054279 A JP11054279 A JP 11054279A JP 11054279 A JP11054279 A JP 11054279A JP S5552273 A JPS5552273 A JP S5552273A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94881478A | 1978-10-05 | 1978-10-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5552273A true JPS5552273A (en) | 1980-04-16 |
Family
ID=25488272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11054279A Pending JPS5552273A (en) | 1978-10-05 | 1979-08-31 | Semiconductor device |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5552273A (fr) |
CA (1) | CA1115426A (fr) |
DE (1) | DE2931272A1 (fr) |
FR (1) | FR2438342A1 (fr) |
GB (1) | GB2032686A (fr) |
IT (1) | IT1123772B (fr) |
NL (1) | NL7905402A (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4449285A (en) * | 1981-08-19 | 1984-05-22 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Method for producing a vertical channel transistor |
US4546367A (en) * | 1982-06-21 | 1985-10-08 | Eaton Corporation | Lateral bidirectional notch FET with extended gate insulator |
JPS598375A (ja) * | 1982-07-05 | 1984-01-17 | Matsushita Electronics Corp | 縦型構造電界効果トランジスタ |
US5034785A (en) * | 1986-03-24 | 1991-07-23 | Siliconix Incorporated | Planar vertical channel DMOS structure |
US4767722A (en) * | 1986-03-24 | 1988-08-30 | Siliconix Incorporated | Method for making planar vertical channel DMOS structures |
US6335247B1 (en) * | 2000-06-19 | 2002-01-01 | Infineon Technologies Ag | Integrated circuit vertical trench device and method of forming thereof |
JP3531613B2 (ja) | 2001-02-06 | 2004-05-31 | 株式会社デンソー | トレンチゲート型半導体装置及びその製造方法 |
-
1979
- 1979-07-11 NL NL7905402A patent/NL7905402A/nl not_active Application Discontinuation
- 1979-08-01 DE DE19792931272 patent/DE2931272A1/de not_active Withdrawn
- 1979-08-31 JP JP11054279A patent/JPS5552273A/ja active Pending
- 1979-09-10 CA CA335,319A patent/CA1115426A/fr not_active Expired
- 1979-09-14 GB GB7932015A patent/GB2032686A/en not_active Withdrawn
- 1979-10-04 FR FR7924747A patent/FR2438342A1/fr not_active Withdrawn
- 1979-10-04 IT IT26258/79A patent/IT1123772B/it active
Also Published As
Publication number | Publication date |
---|---|
DE2931272A1 (de) | 1980-04-24 |
FR2438342A1 (fr) | 1980-04-30 |
NL7905402A (nl) | 1980-04-09 |
CA1115426A (fr) | 1981-12-29 |
GB2032686A (en) | 1980-05-08 |
IT7926258A0 (it) | 1979-10-04 |
IT1123772B (it) | 1986-04-30 |
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