CA1053382A - Surface treatment of semiconductor substrates - Google Patents
Surface treatment of semiconductor substratesInfo
- Publication number
- CA1053382A CA1053382A CA272,855A CA272855A CA1053382A CA 1053382 A CA1053382 A CA 1053382A CA 272855 A CA272855 A CA 272855A CA 1053382 A CA1053382 A CA 1053382A
- Authority
- CA
- Canada
- Prior art keywords
- oxidizing agent
- metal oxide
- wafers
- hydrophilic
- establishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 title abstract description 3
- 238000004381 surface treatment Methods 0.000 title abstract 2
- 235000012431 wafers Nutrition 0.000 claims abstract description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000005498 polishing Methods 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 238000004140 cleaning Methods 0.000 claims abstract description 17
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 12
- 230000005660 hydrophilic surface Effects 0.000 claims abstract description 6
- 230000003647 oxidation Effects 0.000 claims abstract description 5
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000007800 oxidant agent Substances 0.000 claims description 14
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 5
- 229910052783 alkali metal Inorganic materials 0.000 claims description 5
- 150000001340 alkali metals Chemical class 0.000 claims description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 5
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical group [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 5
- 230000002209 hydrophobic effect Effects 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical compound [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 claims description 2
- 230000005661 hydrophobic surface Effects 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical group C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 2
- 150000003839 salts Chemical class 0.000 claims 2
- 229910052708 sodium Inorganic materials 0.000 claims 2
- 239000011734 sodium Substances 0.000 claims 2
- 229910021645 metal ion Inorganic materials 0.000 claims 1
- 238000011268 retreatment Methods 0.000 claims 1
- 230000003750 conditioning effect Effects 0.000 abstract description 3
- 230000007062 hydrolysis Effects 0.000 abstract 1
- 238000006460 hydrolysis reaction Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 239000002245 particle Substances 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- 238000007654 immersion Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910017974 NH40H Inorganic materials 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010306 acid treatment Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015271 coagulation Effects 0.000 description 2
- 238000005345 coagulation Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 238000005201 scrubbing Methods 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000010186 staining Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- QDHHCQZDFGDHMP-UHFFFAOYSA-N Chloramine Chemical compound ClN QDHHCQZDFGDHMP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910001508 alkali metal halide Inorganic materials 0.000 description 1
- 150000008045 alkali metal halides Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- -1 silica Chemical class 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229960002415 trichloroethylene Drugs 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/670,508 US4050954A (en) | 1976-03-25 | 1976-03-25 | Surface treatment of semiconductor substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1053382A true CA1053382A (en) | 1979-04-24 |
Family
ID=24690679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA272,855A Expired CA1053382A (en) | 1976-03-25 | 1977-02-28 | Surface treatment of semiconductor substrates |
Country Status (7)
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4116714A (en) * | 1977-08-15 | 1978-09-26 | International Business Machines Corporation | Post-polishing semiconductor surface cleaning process |
| JPS6119133A (ja) * | 1984-07-05 | 1986-01-28 | Nec Corp | 半導体装置の製造方法 |
| DE3735158A1 (de) * | 1987-10-16 | 1989-05-03 | Wacker Chemitronic | Verfahren zum schleierfreien polieren von halbleiterscheiben |
| JPH02165641A (ja) * | 1988-12-20 | 1990-06-26 | Sanyo Electric Co Ltd | 電界効果トランジスタの製造方法 |
| US5320706A (en) * | 1991-10-15 | 1994-06-14 | Texas Instruments Incorporated | Removing slurry residue from semiconductor wafer planarization |
| JPH0779166B2 (ja) * | 1991-12-25 | 1995-08-23 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
| KR0166404B1 (ko) * | 1993-03-26 | 1999-02-01 | 사토 후미오 | 연마방법 및 연마장치 |
| US5607718A (en) * | 1993-03-26 | 1997-03-04 | Kabushiki Kaisha Toshiba | Polishing method and polishing apparatus |
| AU7221294A (en) * | 1993-07-30 | 1995-02-28 | Semitool, Inc. | Methods for processing semiconductors to reduce surface particles |
| US5700180A (en) | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
| US5658183A (en) * | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5643060A (en) * | 1993-08-25 | 1997-07-01 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including heater |
| US6267122B1 (en) * | 1993-09-10 | 2001-07-31 | Texas Instruments Incorporated | Semiconductor cleaning solution and method |
| US5885138A (en) | 1993-09-21 | 1999-03-23 | Ebara Corporation | Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device |
| JP3326642B2 (ja) * | 1993-11-09 | 2002-09-24 | ソニー株式会社 | 基板の研磨後処理方法およびこれに用いる研磨装置 |
| JP2586319B2 (ja) * | 1993-12-15 | 1997-02-26 | 日本電気株式会社 | 半導体基板の研磨方法 |
| DE19544328B4 (de) | 1994-11-29 | 2014-03-20 | Ebara Corp. | Poliervorrichtung |
| EP0718873A3 (en) * | 1994-12-21 | 1998-04-15 | MEMC Electronic Materials, Inc. | Cleaning process for hydrophobic silicon wafers |
| JP3649771B2 (ja) * | 1995-05-15 | 2005-05-18 | 栗田工業株式会社 | 洗浄方法 |
| IL113829A (en) * | 1995-05-23 | 2000-12-06 | Nova Measuring Instr Ltd | Apparatus for optical inspection of wafers during polishing |
| US20070123151A1 (en) * | 1995-05-23 | 2007-05-31 | Nova Measuring Instruments Ltd | Apparatus for optical inspection of wafers during polishing |
| US7169015B2 (en) * | 1995-05-23 | 2007-01-30 | Nova Measuring Instruments Ltd. | Apparatus for optical inspection of wafers during processing |
| US5704987A (en) * | 1996-01-19 | 1998-01-06 | International Business Machines Corporation | Process for removing residue from a semiconductor wafer after chemical-mechanical polishing |
| DE19709217A1 (de) * | 1997-03-06 | 1998-09-10 | Wacker Siltronic Halbleitermat | Verfahren zur Behandlung einer polierten Halbleiterscheibe gleich nach Abschluß einer Politur der Halbleiterscheibe |
| US5896870A (en) | 1997-03-11 | 1999-04-27 | International Business Machines Corporation | Method of removing slurry particles |
| US5922136A (en) * | 1997-03-28 | 1999-07-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-CMP cleaner apparatus and method |
| US6240933B1 (en) | 1997-05-09 | 2001-06-05 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| US6152148A (en) * | 1998-09-03 | 2000-11-28 | Honeywell, Inc. | Method for cleaning semiconductor wafers containing dielectric films |
| US6230720B1 (en) | 1999-08-16 | 2001-05-15 | Memc Electronic Materials, Inc. | Single-operation method of cleaning semiconductors after final polishing |
| US6375548B1 (en) * | 1999-12-30 | 2002-04-23 | Micron Technology, Inc. | Chemical-mechanical polishing methods |
| US6416391B1 (en) * | 2000-02-28 | 2002-07-09 | Seh America, Inc. | Method of demounting silicon wafers after polishing |
| US20030104770A1 (en) | 2001-04-30 | 2003-06-05 | Arch Specialty Chemicals, Inc. | Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers |
| US20040159050A1 (en) * | 2001-04-30 | 2004-08-19 | Arch Specialty Chemicals, Inc. | Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers |
| US20040029494A1 (en) * | 2002-08-09 | 2004-02-12 | Souvik Banerjee | Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques |
| WO2006076005A1 (en) * | 2005-01-12 | 2006-07-20 | Boc, Inc. | System for cleaning a surface using cryogenic aerosol and fluid reactant |
| TWI324797B (en) * | 2005-04-05 | 2010-05-11 | Lam Res Corp | Method for removing particles from a surface |
| JP4817291B2 (ja) * | 2005-10-25 | 2011-11-16 | Ｏｋｉセミコンダクタ株式会社 | 半導体ウェハの製造方法 |
| WO2008097634A2 (en) | 2007-02-08 | 2008-08-14 | Fontana Technology | Particle removal method and composition |
| US20080299780A1 (en) * | 2007-06-01 | 2008-12-04 | Uv Tech Systems, Inc. | Method and apparatus for laser oxidation and reduction |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2690383A (en) * | 1952-04-29 | 1954-09-28 | Gen Electric Co Ltd | Etching of crystal contact devices |
| US2930722A (en) * | 1959-02-03 | 1960-03-29 | Bell Telephone Labor Inc | Method of treating silicon |
| US3170273A (en) * | 1963-01-10 | 1965-02-23 | Monsanto Co | Process for polishing semiconductor materials |
| US3436259A (en) * | 1966-05-12 | 1969-04-01 | Ibm | Method for plating and polishing a silicon planar surface |
| JPS50147287A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-05-15 | 1975-11-26 |
-
1976
- 1976-03-25 US US05/670,508 patent/US4050954A/en not_active Expired - Lifetime
-
1977
- 1977-01-28 JP JP793277A patent/JPS52117060A/ja active Granted
- 1977-02-01 FR FR7703512A patent/FR2345532A1/fr active Granted
- 1977-02-16 DE DE2706519A patent/DE2706519C2/de not_active Expired
- 1977-02-24 GB GB7820/77A patent/GB1525675A/en not_active Expired
- 1977-02-28 CA CA272,855A patent/CA1053382A/en not_active Expired
- 1977-03-04 IT IT20894/77A patent/IT1114857B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| US4050954A (en) | 1977-09-27 |
| FR2345532B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1979-03-09 |
| GB1525675A (en) | 1978-09-20 |
| IT1114857B (it) | 1986-01-27 |
| JPS52117060A (en) | 1977-10-01 |
| JPS542539B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1979-02-08 |
| DE2706519C2 (de) | 1985-09-26 |
| DE2706519A1 (de) | 1977-10-06 |
| FR2345532A1 (fr) | 1977-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1053382A (en) | Surface treatment of semiconductor substrates | |
| US4116714A (en) | Post-polishing semiconductor surface cleaning process | |
| US5294570A (en) | Reduction of foreign particulate matter on semiconductor wafers | |
| US6100198A (en) | Post-planarization, pre-oxide removal ozone treatment | |
| KR100597909B1 (ko) | 구리막을 폴리싱한 후 반도체기판을 세정하는 방법 및 장치 | |
| KR100220926B1 (ko) | 소수성 실리콘 웨이퍼의 세정방법 | |
| CN113690128A (zh) | 一种磷化铟晶片的清洗方法 | |
| JP4085356B2 (ja) | 半導体ウェーハの洗浄乾燥方法 | |
| US5964953A (en) | Post-etching alkaline treatment process | |
| US6849548B2 (en) | Method of reducing particulate contamination during polishing of a wafer | |
| KR100558164B1 (ko) | 질화물 제거용 식각액 및 이를 이용한 반도체 소자의질화막 제거방법 | |
| JPH0922885A (ja) | 化学的機械研磨後の基板洗浄方法 | |
| JPH11251280A (ja) | 半導体基板の洗浄方法 | |
| KR100329115B1 (ko) | 반도체웨이퍼의연마직후연마반도체웨이퍼의처리방법 | |
| KR20110036990A (ko) | 균일 산화막 형성 방법 및 세정 방법 | |
| US20020175143A1 (en) | Processes for polishing wafers | |
| JPH0786220A (ja) | 半導体ウエハの洗浄方法 | |
| KR0153393B1 (ko) | 반도체 기판의 연마 방법 | |
| JP3436696B2 (ja) | オゾン浸漬によるシリコンウエハのエッジ汚れの防止方法および製品 | |
| JP2001326209A (ja) | シリコン基板の表面処理方法 | |
| JP3158407B2 (ja) | 半導体基板の洗浄方法 | |
| JPH07240394A (ja) | 半導体ウェーハの表面洗浄方法 | |
| JPH06163496A (ja) | シリコンウェーハの洗浄液およびその洗浄方法 | |
| JPH031535A (ja) | 半導体ウェハーの加工方法 | |
| KR100235944B1 (ko) | 반도체소자의 세정 방법 |