JPS52117060A - Method of cleaning silicon wafers - Google Patents

Method of cleaning silicon wafers

Info

Publication number
JPS52117060A
JPS52117060A JP793277A JP793277A JPS52117060A JP S52117060 A JPS52117060 A JP S52117060A JP 793277 A JP793277 A JP 793277A JP 793277 A JP793277 A JP 793277A JP S52117060 A JPS52117060 A JP S52117060A
Authority
JP
Japan
Prior art keywords
silicon wafers
cleaning silicon
cleaning
wafers
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP793277A
Other languages
English (en)
Japanese (ja)
Other versions
JPS542539B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Esu Baashi Jiyagutaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS52117060A publication Critical patent/JPS52117060A/ja
Publication of JPS542539B2 publication Critical patent/JPS542539B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
JP793277A 1976-03-25 1977-01-28 Method of cleaning silicon wafers Granted JPS52117060A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/670,508 US4050954A (en) 1976-03-25 1976-03-25 Surface treatment of semiconductor substrates

Publications (2)

Publication Number Publication Date
JPS52117060A true JPS52117060A (en) 1977-10-01
JPS542539B2 JPS542539B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-02-08

Family

ID=24690679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP793277A Granted JPS52117060A (en) 1976-03-25 1977-01-28 Method of cleaning silicon wafers

Country Status (7)

Country Link
US (1) US4050954A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS52117060A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1053382A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2706519C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2345532A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1525675A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1114857B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02165641A (ja) * 1988-12-20 1990-06-26 Sanyo Electric Co Ltd 電界効果トランジスタの製造方法
JPH05203982A (ja) * 1991-12-25 1993-08-13 Seiko Epson Corp 薄膜トランジスタの製造方法

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4116714A (en) * 1977-08-15 1978-09-26 International Business Machines Corporation Post-polishing semiconductor surface cleaning process
JPS6119133A (ja) * 1984-07-05 1986-01-28 Nec Corp 半導体装置の製造方法
DE3735158A1 (de) * 1987-10-16 1989-05-03 Wacker Chemitronic Verfahren zum schleierfreien polieren von halbleiterscheiben
US5320706A (en) * 1991-10-15 1994-06-14 Texas Instruments Incorporated Removing slurry residue from semiconductor wafer planarization
KR0166404B1 (ko) * 1993-03-26 1999-02-01 사토 후미오 연마방법 및 연마장치
US5607718A (en) * 1993-03-26 1997-03-04 Kabushiki Kaisha Toshiba Polishing method and polishing apparatus
AU7221294A (en) * 1993-07-30 1995-02-28 Semitool, Inc. Methods for processing semiconductors to reduce surface particles
US5700180A (en) 1993-08-25 1997-12-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5643060A (en) * 1993-08-25 1997-07-01 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including heater
US6267122B1 (en) * 1993-09-10 2001-07-31 Texas Instruments Incorporated Semiconductor cleaning solution and method
US5885138A (en) 1993-09-21 1999-03-23 Ebara Corporation Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device
JP3326642B2 (ja) * 1993-11-09 2002-09-24 ソニー株式会社 基板の研磨後処理方法およびこれに用いる研磨装置
JP2586319B2 (ja) * 1993-12-15 1997-02-26 日本電気株式会社 半導体基板の研磨方法
DE19544328B4 (de) 1994-11-29 2014-03-20 Ebara Corp. Poliervorrichtung
EP0718873A3 (en) * 1994-12-21 1998-04-15 MEMC Electronic Materials, Inc. Cleaning process for hydrophobic silicon wafers
JP3649771B2 (ja) * 1995-05-15 2005-05-18 栗田工業株式会社 洗浄方法
IL113829A (en) * 1995-05-23 2000-12-06 Nova Measuring Instr Ltd Apparatus for optical inspection of wafers during polishing
US20070123151A1 (en) * 1995-05-23 2007-05-31 Nova Measuring Instruments Ltd Apparatus for optical inspection of wafers during polishing
US7169015B2 (en) * 1995-05-23 2007-01-30 Nova Measuring Instruments Ltd. Apparatus for optical inspection of wafers during processing
US5704987A (en) * 1996-01-19 1998-01-06 International Business Machines Corporation Process for removing residue from a semiconductor wafer after chemical-mechanical polishing
DE19709217A1 (de) * 1997-03-06 1998-09-10 Wacker Siltronic Halbleitermat Verfahren zur Behandlung einer polierten Halbleiterscheibe gleich nach Abschluß einer Politur der Halbleiterscheibe
US5896870A (en) 1997-03-11 1999-04-27 International Business Machines Corporation Method of removing slurry particles
US5922136A (en) * 1997-03-28 1999-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Post-CMP cleaner apparatus and method
US6240933B1 (en) 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
US6152148A (en) * 1998-09-03 2000-11-28 Honeywell, Inc. Method for cleaning semiconductor wafers containing dielectric films
US6230720B1 (en) 1999-08-16 2001-05-15 Memc Electronic Materials, Inc. Single-operation method of cleaning semiconductors after final polishing
US6375548B1 (en) * 1999-12-30 2002-04-23 Micron Technology, Inc. Chemical-mechanical polishing methods
US6416391B1 (en) * 2000-02-28 2002-07-09 Seh America, Inc. Method of demounting silicon wafers after polishing
US20030104770A1 (en) 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US20040159050A1 (en) * 2001-04-30 2004-08-19 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US20040029494A1 (en) * 2002-08-09 2004-02-12 Souvik Banerjee Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
WO2006076005A1 (en) * 2005-01-12 2006-07-20 Boc, Inc. System for cleaning a surface using cryogenic aerosol and fluid reactant
TWI324797B (en) * 2005-04-05 2010-05-11 Lam Res Corp Method for removing particles from a surface
JP4817291B2 (ja) * 2005-10-25 2011-11-16 Okiセミコンダクタ株式会社 半導体ウェハの製造方法
WO2008097634A2 (en) 2007-02-08 2008-08-14 Fontana Technology Particle removal method and composition
US20080299780A1 (en) * 2007-06-01 2008-12-04 Uv Tech Systems, Inc. Method and apparatus for laser oxidation and reduction

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50147287A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-05-15 1975-11-26

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2690383A (en) * 1952-04-29 1954-09-28 Gen Electric Co Ltd Etching of crystal contact devices
US2930722A (en) * 1959-02-03 1960-03-29 Bell Telephone Labor Inc Method of treating silicon
US3170273A (en) * 1963-01-10 1965-02-23 Monsanto Co Process for polishing semiconductor materials
US3436259A (en) * 1966-05-12 1969-04-01 Ibm Method for plating and polishing a silicon planar surface

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50147287A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-05-15 1975-11-26

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02165641A (ja) * 1988-12-20 1990-06-26 Sanyo Electric Co Ltd 電界効果トランジスタの製造方法
JPH05203982A (ja) * 1991-12-25 1993-08-13 Seiko Epson Corp 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
CA1053382A (en) 1979-04-24
US4050954A (en) 1977-09-27
FR2345532B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-03-09
GB1525675A (en) 1978-09-20
IT1114857B (it) 1986-01-27
JPS542539B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-02-08
DE2706519C2 (de) 1985-09-26
DE2706519A1 (de) 1977-10-06
FR2345532A1 (fr) 1977-10-21

Similar Documents

Publication Publication Date Title
JPS52117060A (en) Method of cleaning silicon wafers
JPS52144270A (en) Method of making silicon usable for semiconductor element
JPS5331961A (en) Method of making semiconductor
JPS5521198A (en) Method of manufacturing semiconductor device
JPS55119177A (en) Silicon etching method
JPS5370668A (en) Method of forming nntype region in silicon substrate
JPS531198A (en) Method of etching silicon dioxide
JPS56107581A (en) Method of manufacturing semiconductor device
JPS5650563A (en) Method of manufacturing semiconductor device
JPS53122684A (en) Method of forming silicon crystal
JPS564268A (en) Method of forming semiconductor device
ZA773397B (en) Method of purifying silicon
JPS5558520A (en) Method of manufacturing semiconductor device
JPS5553416A (en) Improvement of method of manufacturing semiconductor device
JPS55150234A (en) Method of etching wafer
JPS52114276A (en) Method of manufacturing semiconductor device
JPS55108776A (en) Method of forming semiconductor device
JPS5538096A (en) Method of manufacturing epitaxial of semiconductor device
JPS5329666A (en) Method of making semiconductor device
ZA77476B (en) Method of manufacturing an object of silicon nitride
JPS5330876A (en) Method of cleaning surface of semiconductor
JPS55160425A (en) Method of manufacturing multiistage semiconductor device
JPS55134981A (en) Method of manufacturing semiconductor device
JPS5311572A (en) Method of making semiconductor device
JPS5299767A (en) Method of making semiconductor device