CA1032661A - Controle spatial de la duree de vie dans les dispositifs a semi-conducteurs - Google Patents

Controle spatial de la duree de vie dans les dispositifs a semi-conducteurs

Info

Publication number
CA1032661A
CA1032661A CA226,177A CA226177A CA1032661A CA 1032661 A CA1032661 A CA 1032661A CA 226177 A CA226177 A CA 226177A CA 1032661 A CA1032661 A CA 1032661A
Authority
CA
Canada
Prior art keywords
lifetime
semiconductor devices
spatial control
spatial
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA226,177A
Other languages
English (en)
Inventor
Surinder Krishna
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of CA1032661A publication Critical patent/CA1032661A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA226,177A 1974-05-28 1975-05-02 Controle spatial de la duree de vie dans les dispositifs a semi-conducteurs Expired CA1032661A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/474,035 US3988771A (en) 1974-05-28 1974-05-28 Spatial control of lifetime in semiconductor device

Publications (1)

Publication Number Publication Date
CA1032661A true CA1032661A (fr) 1978-06-06

Family

ID=23881938

Family Applications (1)

Application Number Title Priority Date Filing Date
CA226,177A Expired CA1032661A (fr) 1974-05-28 1975-05-02 Controle spatial de la duree de vie dans les dispositifs a semi-conducteurs

Country Status (6)

Country Link
US (1) US3988771A (fr)
JP (1) JPS6034276B2 (fr)
CA (1) CA1032661A (fr)
DE (1) DE2523307C2 (fr)
FR (1) FR2275887A1 (fr)
GB (1) GB1511012A (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2625856C3 (de) * 1976-06-09 1980-04-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement
JPS59114660A (ja) * 1982-12-21 1984-07-02 Casio Comput Co Ltd フイ−ルド選択読取り方式
JPS60220971A (ja) * 1984-04-17 1985-11-05 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ及びその製造方法
GB2171555A (en) * 1985-02-20 1986-08-28 Philips Electronic Associated Bipolar semiconductor device with implanted recombination region
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
JP4267083B2 (ja) * 1998-06-01 2009-05-27 三菱電機株式会社 ダイオード
JP4653273B2 (ja) * 1999-11-05 2011-03-16 富士電機システムズ株式会社 半導体装置、および、その製造方法
US6849874B2 (en) * 2001-10-26 2005-02-01 Cree, Inc. Minimizing degradation of SiC bipolar semiconductor devices
US20050121691A1 (en) * 2003-12-05 2005-06-09 Jean-Luc Morand Active semiconductor component with a reduced surface area
US8513722B2 (en) 2010-03-02 2013-08-20 Micron Technology, Inc. Floating body cell structures, devices including same, and methods for forming same
US9646869B2 (en) 2010-03-02 2017-05-09 Micron Technology, Inc. Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
US9608119B2 (en) 2010-03-02 2017-03-28 Micron Technology, Inc. Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
US8288795B2 (en) 2010-03-02 2012-10-16 Micron Technology, Inc. Thyristor based memory cells, devices and systems including the same and methods for forming the same
US8507966B2 (en) 2010-03-02 2013-08-13 Micron Technology, Inc. Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
US8598621B2 (en) 2011-02-11 2013-12-03 Micron Technology, Inc. Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor
US8952418B2 (en) 2011-03-01 2015-02-10 Micron Technology, Inc. Gated bipolar junction transistors
US8519431B2 (en) 2011-03-08 2013-08-27 Micron Technology, Inc. Thyristors
US8772848B2 (en) 2011-07-26 2014-07-08 Micron Technology, Inc. Circuit structures, memory circuitry, and methods
US9224738B1 (en) 2014-08-18 2015-12-29 Micron Technology, Inc. Methods of forming an array of gated devices
US9673054B2 (en) 2014-08-18 2017-06-06 Micron Technology, Inc. Array of gated devices and methods of forming an array of gated devices
US9209187B1 (en) 2014-08-18 2015-12-08 Micron Technology, Inc. Methods of forming an array of gated devices
CN110828548A (zh) * 2019-10-25 2020-02-21 深圳市德芯半导体技术有限公司 一种可控硅器件及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
DE1489087B1 (de) * 1964-10-24 1970-09-03 Licentia Gmbh Halbleiterbauelement mit verbessertem Frequenzverhalten und Verfahren zum Herstellen
FR1537360A (fr) * 1966-09-19 1968-08-23 Westinghouse Electric Corp Procédé pour faire diffuser l'or dans un matériau semi-conducteur
GB1197205A (en) * 1966-12-13 1970-07-01 Matsushita Electrical Ind Comp Method of Making a Semiconductor Switching Element
DE1614410B2 (de) * 1967-01-25 1973-12-13 Siemens Ag, 1000 Berlin U. 8000 Muenchen Halbleiterbauelement
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches
GB1250377A (fr) * 1968-08-24 1971-10-20
GB1214180A (en) * 1968-08-30 1970-12-02 Westinghouse Brake & Signal Semiconductor devices
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
GB1327204A (en) * 1972-01-24 1973-08-15 Ass Elect Ind Semiconductor devices
JPS503790A (fr) * 1973-05-15 1975-01-16

Also Published As

Publication number Publication date
DE2523307C2 (de) 1984-12-20
FR2275887B1 (fr) 1982-10-15
GB1511012A (en) 1978-05-17
US3988771A (en) 1976-10-26
DE2523307A1 (de) 1975-12-11
JPS6034276B2 (ja) 1985-08-07
JPS513180A (fr) 1976-01-12
FR2275887A1 (fr) 1976-01-16

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