FR2275887A1 - Composants a semi-conducteur a duree de vie reglee de recombinaison des charges - Google Patents

Composants a semi-conducteur a duree de vie reglee de recombinaison des charges

Info

Publication number
FR2275887A1
FR2275887A1 FR7516714A FR7516714A FR2275887A1 FR 2275887 A1 FR2275887 A1 FR 2275887A1 FR 7516714 A FR7516714 A FR 7516714A FR 7516714 A FR7516714 A FR 7516714A FR 2275887 A1 FR2275887 A1 FR 2275887A1
Authority
FR
France
Prior art keywords
lifetime
regulated
semiconductor components
recombination
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7516714A
Other languages
English (en)
Other versions
FR2275887B1 (fr
Inventor
Surinder Krishna
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2275887A1 publication Critical patent/FR2275887A1/fr
Application granted granted Critical
Publication of FR2275887B1 publication Critical patent/FR2275887B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7516714A 1974-05-28 1975-05-28 Composants a semi-conducteur a duree de vie reglee de recombinaison des charges Granted FR2275887A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/474,035 US3988771A (en) 1974-05-28 1974-05-28 Spatial control of lifetime in semiconductor device

Publications (2)

Publication Number Publication Date
FR2275887A1 true FR2275887A1 (fr) 1976-01-16
FR2275887B1 FR2275887B1 (fr) 1982-10-15

Family

ID=23881938

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7516714A Granted FR2275887A1 (fr) 1974-05-28 1975-05-28 Composants a semi-conducteur a duree de vie reglee de recombinaison des charges

Country Status (6)

Country Link
US (1) US3988771A (fr)
JP (1) JPS6034276B2 (fr)
CA (1) CA1032661A (fr)
DE (1) DE2523307C2 (fr)
FR (1) FR2275887A1 (fr)
GB (1) GB1511012A (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2625856C3 (de) * 1976-06-09 1980-04-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement
JPS59114660A (ja) * 1982-12-21 1984-07-02 Casio Comput Co Ltd フイ−ルド選択読取り方式
JPS60220971A (ja) * 1984-04-17 1985-11-05 Mitsubishi Electric Corp ゲ−トタ−ンオフサイリスタ及びその製造方法
GB2171555A (en) * 1985-02-20 1986-08-28 Philips Electronic Associated Bipolar semiconductor device with implanted recombination region
US6274892B1 (en) * 1998-03-09 2001-08-14 Intersil Americas Inc. Devices formable by low temperature direct bonding
EP1780799B9 (fr) * 1998-06-01 2012-02-29 Mitsubishi Denki Kabushiki Kaisha Diode
JP4653273B2 (ja) * 1999-11-05 2011-03-16 富士電機システムズ株式会社 半導体装置、および、その製造方法
US6849874B2 (en) 2001-10-26 2005-02-01 Cree, Inc. Minimizing degradation of SiC bipolar semiconductor devices
US20050121691A1 (en) * 2003-12-05 2005-06-09 Jean-Luc Morand Active semiconductor component with a reduced surface area
US8513722B2 (en) 2010-03-02 2013-08-20 Micron Technology, Inc. Floating body cell structures, devices including same, and methods for forming same
US9646869B2 (en) 2010-03-02 2017-05-09 Micron Technology, Inc. Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
US8507966B2 (en) 2010-03-02 2013-08-13 Micron Technology, Inc. Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
US8288795B2 (en) 2010-03-02 2012-10-16 Micron Technology, Inc. Thyristor based memory cells, devices and systems including the same and methods for forming the same
US9608119B2 (en) 2010-03-02 2017-03-28 Micron Technology, Inc. Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
US8598621B2 (en) 2011-02-11 2013-12-03 Micron Technology, Inc. Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor
US8952418B2 (en) 2011-03-01 2015-02-10 Micron Technology, Inc. Gated bipolar junction transistors
US8519431B2 (en) 2011-03-08 2013-08-27 Micron Technology, Inc. Thyristors
US8772848B2 (en) 2011-07-26 2014-07-08 Micron Technology, Inc. Circuit structures, memory circuitry, and methods
US9209187B1 (en) 2014-08-18 2015-12-08 Micron Technology, Inc. Methods of forming an array of gated devices
US9224738B1 (en) 2014-08-18 2015-12-29 Micron Technology, Inc. Methods of forming an array of gated devices
US9673054B2 (en) 2014-08-18 2017-06-06 Micron Technology, Inc. Array of gated devices and methods of forming an array of gated devices
CN110828548A (zh) * 2019-10-25 2020-02-21 深圳市德芯半导体技术有限公司 一种可控硅器件及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1537360A (fr) * 1966-09-19 1968-08-23 Westinghouse Electric Corp Procédé pour faire diffuser l'or dans un matériau semi-conducteur
DE1943537A1 (de) * 1968-08-30 1970-03-05 Westinghouse Brake & Signal Halbleitervorrichtung
GB1327204A (en) * 1972-01-24 1973-08-15 Ass Elect Ind Semiconductor devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
DE1489087B1 (de) * 1964-10-24 1970-09-03 Licentia Gmbh Halbleiterbauelement mit verbessertem Frequenzverhalten und Verfahren zum Herstellen
GB1197205A (en) * 1966-12-13 1970-07-01 Matsushita Electrical Ind Comp Method of Making a Semiconductor Switching Element
DE1614410B2 (de) * 1967-01-25 1973-12-13 Siemens Ag, 1000 Berlin U. 8000 Muenchen Halbleiterbauelement
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches
DE1942838A1 (de) * 1968-08-24 1970-02-26 Sony Corp Verfahren zur Herstellung integrierter Schaltungen
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
JPS503790A (fr) * 1973-05-15 1975-01-16

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1537360A (fr) * 1966-09-19 1968-08-23 Westinghouse Electric Corp Procédé pour faire diffuser l'or dans un matériau semi-conducteur
DE1943537A1 (de) * 1968-08-30 1970-03-05 Westinghouse Brake & Signal Halbleitervorrichtung
GB1327204A (en) * 1972-01-24 1973-08-15 Ass Elect Ind Semiconductor devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV931/72 *

Also Published As

Publication number Publication date
JPS513180A (fr) 1976-01-12
JPS6034276B2 (ja) 1985-08-07
FR2275887B1 (fr) 1982-10-15
CA1032661A (fr) 1978-06-06
US3988771A (en) 1976-10-26
DE2523307A1 (de) 1975-12-11
GB1511012A (en) 1978-05-17
DE2523307C2 (de) 1984-12-20

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Legal Events

Date Code Title Description
ST Notification of lapse