CA1025560A - Dispositif a semiconducteurs - Google Patents

Dispositif a semiconducteurs

Info

Publication number
CA1025560A
CA1025560A CA224,915A CA224915A CA1025560A CA 1025560 A CA1025560 A CA 1025560A CA 224915 A CA224915 A CA 224915A CA 1025560 A CA1025560 A CA 1025560A
Authority
CA
Canada
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA224,915A
Other languages
English (en)
Inventor
Kunizo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA1025560A publication Critical patent/CA1025560A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
CA224,915A 1974-04-18 1975-04-17 Dispositif a semiconducteurs Expired CA1025560A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49043790A JPS50137478A (fr) 1974-04-18 1974-04-18

Publications (1)

Publication Number Publication Date
CA1025560A true CA1025560A (fr) 1978-01-31

Family

ID=12673526

Family Applications (1)

Application Number Title Priority Date Filing Date
CA224,915A Expired CA1025560A (fr) 1974-04-18 1975-04-17 Dispositif a semiconducteurs

Country Status (7)

Country Link
US (1) US4035824A (fr)
JP (1) JPS50137478A (fr)
CA (1) CA1025560A (fr)
DE (1) DE2516877C2 (fr)
FR (1) FR2307377A1 (fr)
GB (1) GB1495358A (fr)
NL (1) NL7504673A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178190A (en) * 1975-06-30 1979-12-11 Rca Corporation Method of making a bipolar transistor with high-low emitter impurity concentration
NL7604445A (nl) * 1976-04-27 1977-10-31 Philips Nv Werkwijze ter vervaardiging van een halfgelei- derinrichting, en inrichting vervaardigd door toepassing van de werkwijze.
NL7612883A (nl) * 1976-11-19 1978-05-23 Philips Nv Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan.
FR2374743A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche a emetteur compose
IT1085486B (it) * 1977-05-30 1985-05-28 Ates Componenti Elettron Struttura a semiconduttore integrata monolitica con giunzioni planari schermate da campi elettrostatici esterni
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
DE3117804A1 (de) * 1981-05-06 1982-11-25 Robert Bosch Gmbh, 7000 Stuttgart "planare transistorstruktur"
DE3276091D1 (en) * 1981-12-24 1987-05-21 Nippon Denso Co Semiconductor device including overvoltage protection diode
IT1202311B (it) * 1985-12-11 1989-02-02 Sgs Microelettronica Spa Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1050448B (fr) * 1959-02-12
GB1070288A (en) * 1963-07-08 1967-06-01 Rca Corp Semiconductor devices
US3663869A (en) * 1971-01-26 1972-05-16 Westinghouse Electric Corp Bipolar-unipolar transistor structure
DE2211384A1 (de) * 1971-03-20 1972-11-30 Philips Nv Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung

Also Published As

Publication number Publication date
JPS50137478A (fr) 1975-10-31
DE2516877A1 (de) 1975-10-23
US4035824A (en) 1977-07-12
FR2307377A1 (fr) 1976-11-05
GB1495358A (en) 1977-12-14
DE2516877C2 (de) 1986-09-18
NL7504673A (nl) 1975-10-21
FR2307377B3 (fr) 1978-10-06

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