CA1016664A - Semiconducteur - Google Patents
SemiconducteurInfo
- Publication number
- CA1016664A CA1016664A CA223,323A CA223323A CA1016664A CA 1016664 A CA1016664 A CA 1016664A CA 223323 A CA223323 A CA 223323A CA 1016664 A CA1016664 A CA 1016664A
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3530774A JPS5437797B2 (fr) | 1974-03-28 | 1974-03-28 | |
JP12586974A JPS5151287A (ja) | 1974-10-31 | 1974-10-31 | Handotaisochi |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1016664A true CA1016664A (fr) | 1977-08-30 |
Family
ID=26374277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA223,323A Expired CA1016664A (fr) | 1974-03-28 | 1975-03-27 | Semiconducteur |
Country Status (6)
Country | Link |
---|---|
CA (1) | CA1016664A (fr) |
DE (1) | DE2513458A1 (fr) |
FR (1) | FR2266307B1 (fr) |
GB (1) | GB1503570A (fr) |
IT (1) | IT1034715B (fr) |
NL (1) | NL7503797A (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1573309A (en) * | 1976-03-24 | 1980-08-20 | Mullard Ltd | Semiconductor devices and their manufacture |
JPS5945233B2 (ja) * | 1979-08-01 | 1984-11-05 | 株式会社日立製作所 | 光点弧型半導体装置 |
US5589840A (en) * | 1991-11-05 | 1996-12-31 | Seiko Epson Corporation | Wrist-type wireless instrument and antenna apparatus |
ATE137316T1 (de) * | 1992-01-13 | 1996-05-15 | Cedis Licensing Gmbh | Zahnradgetriebe |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1050448B (fr) * | 1959-02-12 | |||
NL242787A (fr) * | 1958-09-05 | |||
US3591430A (en) * | 1968-11-14 | 1971-07-06 | Philco Ford Corp | Method for fabricating bipolar planar transistor having reduced minority carrier fringing |
-
1975
- 1975-03-26 GB GB1269775A patent/GB1503570A/en not_active Expired
- 1975-03-26 DE DE19752513458 patent/DE2513458A1/de not_active Ceased
- 1975-03-27 NL NL7503797A patent/NL7503797A/xx not_active Application Discontinuation
- 1975-03-27 CA CA223,323A patent/CA1016664A/fr not_active Expired
- 1975-03-28 IT IT2183975A patent/IT1034715B/it active
- 1975-03-28 FR FR7509886A patent/FR2266307B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2513458A1 (de) | 1975-10-02 |
FR2266307B1 (fr) | 1978-10-06 |
FR2266307A1 (fr) | 1975-10-24 |
NL7503797A (nl) | 1975-09-30 |
IT1034715B (it) | 1979-10-10 |
GB1503570A (en) | 1978-03-15 |
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