BRPI1010215A8 - dispositivo e método - Google Patents

dispositivo e método

Info

Publication number
BRPI1010215A8
BRPI1010215A8 BRPI1010215A BRPI1010215A BRPI1010215A8 BR PI1010215 A8 BRPI1010215 A8 BR PI1010215A8 BR PI1010215 A BRPI1010215 A BR PI1010215A BR PI1010215 A BRPI1010215 A BR PI1010215A BR PI1010215 A8 BRPI1010215 A8 BR PI1010215A8
Authority
BR
Brazil
Prior art keywords
type
semiconductor structure
contact
region
metallic
Prior art date
Application number
BRPI1010215A
Other languages
English (en)
Inventor
Munkholm Anneli
Chung Theodore
Original Assignee
Koninl Philips Electronics Nv
Koninklijke Philips Nv
Philips Lumileds Lighting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninl Philips Electronics Nv, Koninklijke Philips Nv, Philips Lumileds Lighting Co filed Critical Koninl Philips Electronics Nv
Publication of BRPI1010215A2 publication Critical patent/BRPI1010215A2/pt
Publication of BRPI1010215A8 publication Critical patent/BRPI1010215A8/pt
Publication of BRPI1010215B1 publication Critical patent/BRPI1010215B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Abstract

camada de contato tipo p para um dispositivo semicondutor emissor de luz iii-p um dispositivo inclui uma estrutura semicondutora com pelo menos uma camada emissora de luz iii-p disposta entre uma região tipo n e uma região tipo p. a estrutura semicondutora inclui adicionalmente uma camada de contato tipo p de gaasxp 1 -x, em que x < o, 45. um primeiro contato metálico está em contato direto com a camada de contato tipo p de gaasxpl-x· um segundo contato metálico está eletricamente conectado à região do tipo n. o primeiro e o segundo contato metálico são formados do mesmo lado da estrutura semicondutora.
BRPI1010215-9A 2009-06-30 2010-05-27 Dispositivo semicondutor emissor de luz e método para fabricar um dispositivo semicondutor emissor de luz BRPI1010215B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/494,988 2009-06-30
US12/494,988 US8017958B2 (en) 2009-06-30 2009-06-30 P-contact layer for a III-P semiconductor light emitting device
PCT/IB2010/052367 WO2011001308A1 (en) 2009-06-30 2010-05-27 P-contact layer for a iii-p semiconductor light emitting device

Publications (3)

Publication Number Publication Date
BRPI1010215A2 BRPI1010215A2 (pt) 2017-01-24
BRPI1010215A8 true BRPI1010215A8 (pt) 2019-01-02
BRPI1010215B1 BRPI1010215B1 (pt) 2020-03-31

Family

ID=42651335

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI1010215-9A BRPI1010215B1 (pt) 2009-06-30 2010-05-27 Dispositivo semicondutor emissor de luz e método para fabricar um dispositivo semicondutor emissor de luz

Country Status (8)

Country Link
US (2) US8017958B2 (pt)
EP (1) EP2449605B1 (pt)
JP (3) JP5927115B2 (pt)
KR (2) KR101886733B1 (pt)
CN (1) CN102473804B (pt)
BR (1) BRPI1010215B1 (pt)
TW (1) TWI528586B (pt)
WO (1) WO2011001308A1 (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8017958B2 (en) * 2009-06-30 2011-09-13 Koninklijke Philips Electronics N.V. P-contact layer for a III-P semiconductor light emitting device
CN104205366B (zh) * 2012-03-30 2018-08-31 亮锐控股有限公司 密封的半导体发光器件
US9923118B2 (en) * 2013-02-25 2018-03-20 Sensor Electronic Technology, Inc. Semiconductor structure with inhomogeneous regions
CN103594590B (zh) * 2013-11-07 2017-02-01 溧阳市江大技术转移中心有限公司 一种倒装发光二极管的制造方法
JP6285573B2 (ja) * 2014-05-08 2018-02-28 エルジー イノテック カンパニー リミテッド 発光素子
KR200495562Y1 (ko) 2020-05-18 2022-07-04 주식회사 온슘바이오 농업회사법인 의료용 금사

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US4582952A (en) * 1984-04-30 1986-04-15 Astrosystems, Inc. Gallium arsenide phosphide top solar cell
JP3020542B2 (ja) * 1990-03-30 2000-03-15 株式会社東芝 半導体発光装置
JP2000058910A (ja) * 1990-08-20 2000-02-25 Toshiba Corp 半導体発光ダイオ―ド
JPH05251739A (ja) * 1992-03-06 1993-09-28 Toshiba Corp 半導体発光デバイス
JP3139890B2 (ja) * 1992-08-25 2001-03-05 三菱電線工業株式会社 半導体発光素子
JP3330218B2 (ja) * 1994-03-25 2002-09-30 三菱電機株式会社 半導体装置の製造方法，及び半導体装置
EP0720242A3 (en) 1994-12-27 1997-07-30 Shinetsu Handotai Kk AlGaInP semiconductor light emitting device
JP2937060B2 (ja) * 1995-01-24 1999-08-23 信越半導体株式会社 ＡｌＧａＩｎＰ系発光装置
US5557627A (en) * 1995-05-19 1996-09-17 Sandia Corporation Visible-wavelength semiconductor lasers and arrays
US6784463B2 (en) 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
JP3420087B2 (ja) * 1997-11-28 2003-06-23 Ｎｅｃエレクトロニクス株式会社 半導体発光素子
JP3552642B2 (ja) * 2000-04-13 2004-08-11 日本電気株式会社 半導体発光素子及びその製造方法
JP2002223040A (ja) * 2001-01-29 2002-08-09 Ricoh Co Ltd 半導体発光素子
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US7019330B2 (en) 2003-08-28 2006-03-28 Lumileds Lighting U.S., Llc Resonant cavity light emitting device
JP4569858B2 (ja) * 2003-11-19 2010-10-27 信越半導体株式会社 発光素子の製造方法
JP4569859B2 (ja) * 2003-11-19 2010-10-27 信越半導体株式会社 発光素子の製造方法
JP4565320B2 (ja) * 2004-05-28 2010-10-20 信越半導体株式会社 発光素子の製造方法
US7244630B2 (en) 2005-04-05 2007-07-17 Philips Lumileds Lighting Company, Llc A1InGaP LED having reduced temperature dependence
JP4715370B2 (ja) * 2005-07-29 2011-07-06 信越半導体株式会社 発光素子及びその製造方法
JP2007042851A (ja) * 2005-08-03 2007-02-15 Mitsubishi Chemicals Corp 発光ダイオードとその製造方法
JP2009524212A (ja) * 2006-01-16 2009-06-25 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Ｅｕ含有蛍光体材料を有する発光装置
JP4894411B2 (ja) * 2006-08-23 2012-03-14 日立電線株式会社 半導体発光素子
JP2008218440A (ja) * 2007-02-09 2008-09-18 Mitsubishi Chemicals Corp ＧａＮ系ＬＥＤ素子および発光装置
JP2009004477A (ja) * 2007-06-20 2009-01-08 Toshiba Corp 半導体発光素子
KR101476143B1 (ko) * 2007-10-10 2014-12-24 신에쯔 한도타이 가부시키가이샤 화합물 반도체 에피택셜 웨이퍼 및 그 제조방법
US8017958B2 (en) * 2009-06-30 2011-09-13 Koninklijke Philips Electronics N.V. P-contact layer for a III-P semiconductor light emitting device
JP2015215687A (ja) * 2014-05-08 2015-12-03 パナソニックＩｐマネジメント株式会社 可搬型決済端末装置

Also Published As

Publication number Publication date
JP2017118150A (ja) 2017-06-29
US20110284891A1 (en) 2011-11-24
JP2012532438A (ja) 2012-12-13
EP2449605A1 (en) 2012-05-09
CN102473804B (zh) 2016-11-23
BRPI1010215A2 (pt) 2017-01-24
CN102473804A (zh) 2012-05-23
KR20120099625A (ko) 2012-09-11
TW201106501A (en) 2011-02-16
JP5927115B2 (ja) 2016-05-25
BRPI1010215B1 (pt) 2020-03-31
US8816368B2 (en) 2014-08-26
WO2011001308A1 (en) 2011-01-06
KR101750397B1 (ko) 2017-06-23
US8017958B2 (en) 2011-09-13
EP2449605B1 (en) 2020-08-26
KR101886733B1 (ko) 2018-08-09
KR20170075018A (ko) 2017-06-30
JP2016034036A (ja) 2016-03-10
TWI528586B (zh) 2016-04-01
US20100327299A1 (en) 2010-12-30

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Legal Events

Date Code Title Description
B25D Requested change of name of applicant approved

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY LLC (US) , KONINKLIJKE PHILIPS N.V. (NL)

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY LLC (US) , KONIN

B25G Requested change of headquarter approved

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY LLC (US) , KONIN

B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B25D Requested change of name of applicant approved

Owner name: KONINKLIJKE PHILIPS N.V. (NL) ; LUMILEDS LLC (US)

B25A Requested transfer of rights approved

Owner name: LUMILEDS HOLDING B.V. (NL)

B25B Requested transfer of rights rejected

Owner name: LUMILEDS HOLDING B.V. (NL)

Free format text: INDEFERIDO O PEDIDO DE TRANSFERENCIA CONTIDO NA PETICAO 870190039967 DE 29/04/2019, EM VIRTUDE DA SOLICITACAO JA TER SIDO ATENDIDA PELA PETICAO 870190039169 DE 25/04/2019 E PUBLICADA NA RPI2531 DE 09/07/2019.

B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 27/05/2010, OBSERVADAS AS CONDICOES LEGAIS.