JP4569858B2 - 発光素子の製造方法 - Google Patents
発光素子の製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 107
- 239000004065 semiconductor Substances 0.000 claims description 94
- 238000005253 cladding Methods 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 47
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 45
- 239000013078 crystal Substances 0.000 claims description 42
- 238000000605 extraction Methods 0.000 claims description 40
- 150000001875 compounds Chemical class 0.000 claims description 37
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 27
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- 125000005842 heteroatom Chemical group 0.000 claims description 7
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- 239000007789 gas Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 8
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000005275 alloying Methods 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
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- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
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- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 4
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 4
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 4
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
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- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
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- 238000001514 detection method Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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Description
組成式(AlxGa1−x)yIn1−yP(ただし、0≦x≦1,0≦y≦1)にて表される化合物のうち、GaAsと格子整合する組成を有する化合物にて各々構成された第一導電型クラッド層、活性層及び第二導電型クラッド層がこの順序で積層されたダブルへテロ構造を有する発光層部と、
発光層部の第一導電型クラッド層が形成する主表面側を第一主表面側として、発光層部からの発光光束のピーク波長に相当する光量子エネルギーよりも大きなバンドギャップエネルギーを有するIII−V族化合物半導体が、該発光層部の第二主表面側にハイドライド気相成長法により厚さ10μm以上に形成された透明厚膜半導体層と、
発光層部の第一主表面側に、MOVPE法により透明厚膜半導体層よりも薄く形成され、GaAsと格子整合するIII−V族化合物半導体にて構成された補助電流拡散層とを有し、
補助電流拡散層の第一主表面の一部を覆う形で、発光層部へ発光駆動電圧を印加するための第一電極を形成する一方、補助電流拡散層の第一主表面から少なくとも活性層の第二主表面までの区間を、第一主表面の一部領域において切り欠くことにより電極用切欠き部を形成し、その電極用切欠き部の底面に第一電極とは異極性となる第二電極を配置したことを特徴とする。
また、上記の課題を解決するために、本発明の発光素子の製造方法は、
<100>方向又は<111>方向を基準方向として、該基準方向に対するオフアングルが10°以上20°以下の主軸を有するGaAs単結晶基板の第二主表面上に、GaAsと格子整合するIII−V族化合物半導体にて構成された補助電流拡散層をMOVPE法にて成長する補助電流拡散層成長工程と、
該補助電流拡散層の第二主表面上に、組成式(Al x Ga 1−x ) y In 1−y P(ただし、0≦x≦1,0≦y≦1)にて表される化合物のうち、GaAsと格子整合する組成を有する化合物にて各々構成された第一導電型クラッド層、活性層及び第二導電型クラッド層がこの順序で積層されたダブルへテロ構造を有する発光層部をMOVPE法にて成長する発光層部成長工程と、
該発光層部の第二主表面上に、該発光層部からの発光光束のピーク波長に相当する光量子エネルギーよりも大きなバンドギャップエネルギーを有するIII−V族化合物半導体が、該発光層部の第二主表面側にハイドライド気相成長法により厚さ10μm以上で、かつ補助電流拡散層よりも厚い透明厚膜半導体層を成長する透明厚膜半導体層成長工程と、
補助電流拡散層の第一主表面側からGaAs単結晶基板を除去する基板除去工程と、
補助電流拡散層の第一主表面の一部を覆う形で、発光層部へ発光駆動電圧を印加するための第一電極を形成する第一電極形成工程と、
補助電流拡散層の第一主表面から少なくとも活性層の第二主表面までの区間を、第一主表面の一部領域において切り欠くことにより電極用切欠き部を形成する電極用切欠き部形成工程と、
電極用切欠き部の底面に第一電極とは異極性となる第二電極を形成する第二電極形成工程と、
を含むことを特徴とする。
図1は、本発明の一実施形態である発光素子100を示す概念図である。発光素子100は、III−V族化合物半導体からなる発光層部24と、該発光層部24の第二主表面側に形成され、発光層部24からの発光光束のピーク波長に相当する光量子エネルギーよりも大きなバンドギャップエネルギーを有するIII−V族化合物半導体からなる透明厚膜半導体層90とを有する。
p型クラッド層6 :(Al0.85Ga0.15)0.5In0.5P
活性層5 :(Al0.04Ga0.96)0.5In0.5P
n型クラッド層4 :(Al0.85Ga0.15)0.5In0.5P
補助電流拡散層91:(Al0.6Ga0.4)0.5In0.5P
p型クラッド層6 :(Al0.85Ga0.15)0.5In0.5P
活性層5 :(Al0.3Ga0.7)0.5In0.5P
n型クラッド層4 :(Al0.85Ga0.15)0.5In0.5P
補助電流拡散層91:(Al0.6Ga0.4)0.5In0.5P
まず、図2の工程1に示すように、成長用基板として、オフアングルを付与したn型のGaAs単結晶基板1を用意する。該基板1は、<100>方向を基準方向として、該基準方向に対するオフアングルが10°以上20°以下(望ましくは13゜以上17°以下:本実施形態では15°)の主軸Aを有するものである。次に、工程2に示すように、その基板1の第二主表面(図中、上面側に表れている)に、n型GaAsバッファ層2を例えば0.5μm、さらにn型AlGaInPからなる補助電流拡散層91を例えば5μmにてエピタキシャル成長させる。補助電流拡散層91の、この段階でのドーパント濃度は、例えば1×1017/cm3以上2×1018/cm3以下に留めてある。
・Al源ガス;トリメチルアルミニウム(TMAl)、トリエチルアルミニウム(TEAl)など;
・Ga源ガス;トリメチルガリウム(TMGa)、トリエチルガリウム(TEGa)など;
・In源ガス;トリメチルインジウム(TMIn)、トリエチルインジウム(TEIn)など。
・P源ガス:トリメチルリン(TMP)、トリエチルリン(TEP)、ホスフィン(PH3)など。
Ga(液体)+HCl(気体) → GaCl(気体)+1/2H2‥‥(1)
GaPの場合、成長温度は例えば640℃以上860℃以下に設定する。また、V族元素であるPは、PH3をキャリアガスであるH2とともに基板上に供給する。さらに、p型ドーパントであるZnは、DMZn(ジメチルZn)の形で供給する。GaClはPH3との反応性に優れ、下記(2)式の反応により、効率よく透明厚膜半導体層90を成長させることができる:
GaCl(気体)+PH3(気体)
→GaP(固体)+HCl(気体)+H2(気体)‥‥(2)
4 n型クラッド層(第二導電型クラッド層)
5 活性層
6 p型クラッド層(第一導電型クラッド層)
9 第一電極
24 発光層部
32 第二電極
90 透明厚膜半導体層
91 補助電流拡散層
100,200,300,400 発光素子
JK 電極用切欠き部
Claims (6)
- <100>方向又は<111>方向を基準方向として、該基準方向に対するオフアングルが10°以上20°以下の主軸を有するGaAs単結晶基板の第二主表面上に、GaAsと格子整合するIII−V族化合物半導体にて構成された補助電流拡散層をMOVPE法にて成長する補助電流拡散層成長工程と、
該補助電流拡散層の第二主表面上に、組成式(AlxGa1−x)yIn1−yP(ただし、0≦x≦1,0≦y≦1)にて表される化合物のうち、GaAsと格子整合する組成を有する化合物にて各々構成された第一導電型クラッド層、活性層及び第二導電型クラッド層がこの順序で積層されたダブルへテロ構造を有する発光層部をMOVPE法にて成長する発光層部成長工程と、
該発光層部の第二主表面上に、該発光層部からの発光光束のピーク波長に相当する光量子エネルギーよりも大きなバンドギャップエネルギーを有するIII−V族化合物半導体が、該発光層部の第二主表面側にハイドライド気相成長法により厚さ10μm以上で、かつ前記補助電流拡散層よりも厚い透明厚膜半導体層を成長する透明厚膜半導体層成長工程と、
前記補助電流拡散層の第一主表面側から前記GaAs単結晶基板を除去する基板除去工程と、
前記補助電流拡散層の第一主表面の一部を覆う形で、前記発光層部へ発光駆動電圧を印加するための第一電極を形成する第一電極形成工程と、
前記補助電流拡散層の第一主表面から少なくとも前記活性層の第二主表面までの区間を、前記第一主表面の一部領域において切り欠くことにより電極用切欠き部を形成する電極用切欠き部形成工程と、
前記電極用切欠き部の底面に前記第一電極とは異極性となる第二電極を形成する第二電極形成工程と、
を含むことを特徴とする発光素子の製造方法。 - 前記補助電流拡散層の第一主表面側において、前記第一電極の周囲領域を主光取出面としたことを特徴とする請求項1記載の発光素子の製造方法。
- 前記透明厚膜半導体層の第二主表面側に主光取出面を形成したことを特徴とする請求項1記載の発光素子の製造方法。
- 前記補助電流拡散層は、組成式(Alx’Ga1−x’)y’In1−y’P(但し、0≦x’≦1,0≦y’≦1)にて表される化合物のうち、GaAsと格子整合する組成を有するとともに、前記活性層よりもAl混晶比x’の大きい化合物にて構成されたことを特徴とする請求項1ないし請求項3のいずれか1項に記載の発光素子の製造方法。
- 前記補助電流拡散層をなす化合物のAl混晶比x’が前記第一導電型クラッド層よりも小さいことを特徴とする請求項4記載の発光素子の製造方法。
- 前記透明厚膜半導体層がGaP又はGaAsPからなることを特徴とする請求項1ないし請求項5のいずれか1項に記載の発光素子の製造方法。
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US8017958B2 (en) * | 2009-06-30 | 2011-09-13 | Koninklijke Philips Electronics N.V. | P-contact layer for a III-P semiconductor light emitting device |
US9793436B2 (en) | 2015-01-16 | 2017-10-17 | Epistar Corporation | Semiconductor light-emitting device |
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