BR9605001A - Equipamento para revestir substratos no vácuo - Google Patents

Equipamento para revestir substratos no vácuo

Info

Publication number
BR9605001A
BR9605001A BR9605001A BR9605001A BR9605001A BR 9605001 A BR9605001 A BR 9605001A BR 9605001 A BR9605001 A BR 9605001A BR 9605001 A BR9605001 A BR 9605001A BR 9605001 A BR9605001 A BR 9605001A
Authority
BR
Brazil
Prior art keywords
chamber
coating substrates
vacuum
equipment
cathodes
Prior art date
Application number
BR9605001A
Other languages
English (en)
Inventor
Goetz Teschner
Joachim Szczyrbowski
Original Assignee
Leybold Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Ag filed Critical Leybold Ag
Publication of BR9605001A publication Critical patent/BR9605001A/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3444Associated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Liquid Crystal (AREA)
  • Laminated Bodies (AREA)
  • Formation Of Insulating Films (AREA)
BR9605001A 1995-10-06 1996-10-04 Equipamento para revestir substratos no vácuo BR9605001A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19537212A DE19537212A1 (de) 1994-10-06 1995-10-06 Vorrichtung zum Beschichten von Substraten im Vakuum

Publications (1)

Publication Number Publication Date
BR9605001A true BR9605001A (pt) 1998-06-23

Family

ID=7774164

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9605001A BR9605001A (pt) 1995-10-06 1996-10-04 Equipamento para revestir substratos no vácuo

Country Status (12)

Country Link
US (1) US5807470A (pt)
EP (1) EP0767483B1 (pt)
JP (1) JP3442589B2 (pt)
KR (1) KR100235573B1 (pt)
CN (1) CN1074582C (pt)
AT (1) ATE183019T1 (pt)
BR (1) BR9605001A (pt)
CA (1) CA2184432C (pt)
DE (2) DE19537212A1 (pt)
ES (1) ES2134538T3 (pt)
SG (1) SG40883A1 (pt)
TW (1) TW413831B (pt)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19605932A1 (de) * 1996-02-17 1997-08-21 Leybold Systems Gmbh Verfahren zum Ablagern einer optisch transparenten und elektrisch leitenden Schicht auf einem Substrat aus durchscheinendem Werkstoff
DE19651615C1 (de) * 1996-12-12 1997-07-10 Fraunhofer Ges Forschung Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern
DE19651811B4 (de) * 1996-12-13 2006-08-31 Unaxis Deutschland Holding Gmbh Vorrichtung zum Belegen eines Substrats mit dünnen Schichten
DE19956733A1 (de) 1999-11-25 2001-06-28 Fraunhofer Ges Forschung Verfahren zur Regelung von Sputterprozessen
DE10154229B4 (de) 2001-11-07 2004-08-05 Applied Films Gmbh & Co. Kg Einrichtung für die Regelung einer Plasmaimpedanz
US7298091B2 (en) * 2002-02-01 2007-11-20 The Regents Of The University Of California Matching network for RF plasma source
DE10306347A1 (de) * 2003-02-15 2004-08-26 Hüttinger Elektronik GmbH & Co. KG Leistungszufuhrregeleinheit
US6967305B2 (en) * 2003-08-18 2005-11-22 Mks Instruments, Inc. Control of plasma transitions in sputter processing systems
JP4658506B2 (ja) * 2004-03-31 2011-03-23 浩史 滝川 パルスアークプラズマ生成用電源回路及びパルスアークプラズマ処理装置
EP1720195B1 (de) * 2005-05-06 2012-12-12 HÜTTINGER Elektronik GmbH + Co. KG Arcunterdrückungsanordnung
EP2326151A1 (fr) * 2009-11-24 2011-05-25 AGC Glass Europe Procédé et dispositif de polarisation d'une électrode DBD
KR20220031132A (ko) * 2017-06-27 2022-03-11 캐논 아네르바 가부시키가이샤 플라스마 처리 장치
JP6458206B1 (ja) * 2017-06-27 2019-01-23 キヤノンアネルバ株式会社 プラズマ処理装置
TWI693860B (zh) * 2017-06-27 2020-05-11 日商佳能安內華股份有限公司 電漿處理裝置
WO2019003309A1 (ja) 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
US20190341235A1 (en) * 2018-05-06 2019-11-07 Advanced Energy Industries Inc. Apparatus, system and method to reduce crazing
SG11202009122YA (en) * 2018-06-26 2020-10-29 Canon Anelva Corp Plasma processing apparatus, plasma processing method, program, and memory medium

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4887005A (en) * 1987-09-15 1989-12-12 Rough J Kirkwood H Multiple electrode plasma reactor power distribution system
JPH01268869A (ja) * 1988-04-20 1989-10-26 Fuji Photo Film Co Ltd スパッタリング装置
DE3923661A1 (de) * 1989-07-18 1991-01-24 Leybold Ag Schaltungsanordnung fuer die anpassung der impedanz einer plasmastrecke an einen hochfrequenzgenerator
DE4042287C2 (de) * 1990-12-31 1999-10-28 Leybold Ag Vorrichtung zum reaktiven Aufstäuben von elektrisch isolierendem Werkstoff
DE4106770C2 (de) * 1991-03-04 1996-10-17 Leybold Ag Verrichtung zum reaktiven Beschichten eines Substrats
US5281321A (en) * 1991-08-20 1994-01-25 Leybold Aktiengesellschaft Device for the suppression of arcs
US5240584A (en) * 1991-11-07 1993-08-31 Leybold Aktiengesellschaft Apparatus for the reactive coating of a substrate
US5415757A (en) * 1991-11-26 1995-05-16 Leybold Aktiengesellschaft Apparatus for coating a substrate with electrically nonconductive coatings
DE4138794A1 (de) * 1991-11-26 1993-05-27 Leybold Ag Verfahren und vorrichtung zum beschichten eines substrats, insbesondere mit elektrisch nichtleitenden schichten
DE4237517A1 (de) * 1992-11-06 1994-05-11 Leybold Ag Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten
US5512164A (en) * 1993-06-03 1996-04-30 The United States Of America As Represented By The United States Department Of Energy Method for sputtering with low frequency alternating current

Also Published As

Publication number Publication date
DE19537212A1 (de) 1996-04-11
SG40883A1 (en) 1997-06-14
US5807470A (en) 1998-09-15
ES2134538T3 (es) 1999-10-01
EP0767483B1 (de) 1999-08-04
CA2184432A1 (en) 1997-04-07
EP0767483A1 (de) 1997-04-09
KR100235573B1 (ko) 1999-12-15
CA2184432C (en) 2006-01-24
KR970023537A (ko) 1997-05-30
JPH09111449A (ja) 1997-04-28
DE59602601D1 (de) 1999-09-09
CN1074582C (zh) 2001-11-07
JP3442589B2 (ja) 2003-09-02
CN1155748A (zh) 1997-07-30
TW413831B (en) 2000-12-01
ATE183019T1 (de) 1999-08-15

Similar Documents

Publication Publication Date Title
BR9605001A (pt) Equipamento para revestir substratos no vácuo
US5399252A (en) Apparatus for coating a substrate by magnetron sputtering
US5300205A (en) Method and device for treating substrates
JPH04325680A (ja) サブストレート上に反応性の膜を付着する装置
WO2001037310A3 (en) Method and apparatus for ionized physical vapor deposition
GB2347148A (en) Enhanced macroparticle filter and cathode arc source
JPS6483656A (en) Method and vacuum painting machine for applying film to base layer
EP0198459A3 (en) Thin film forming method through sputtering and sputtering device
EP1489643A3 (en) Method and apparatus for ionized physical vapor deposition
TW370673B (en) Sputtering device for etching or coating a substrate and process for setting an operating point of said sputtering device
JP3410496B2 (ja) 基板の被覆方法および被覆装置
GB9821903D0 (en) A method of applying a coating to a metallic article and an apparatus for applying a coating to a metallic article
MY118033A (en) Plasma processing method and apparatus.
EP0686708A4 (en) METHOD AND APPARATUS FOR FORMING A LAYER -------------------
US4170541A (en) Rotating resonator for large substrate tables in sputtering systems
ES2105386T3 (es) Aparato para la deposicion a vapor de un plasma reactivo de corriente continua de un material electricamente aislante empleando para ello un anodo blindado.
US3846294A (en) Method of coating the interior walls of through-holes
US6346176B1 (en) Method of depositing thin films
JPS5569257A (en) Low-temperature sputtering unit
JPS61231172A (ja) スパツタ方法及び装置
RU93018049A (ru) Способ нанесения вакуумных металлизированных покрытий на диэлектрические подложки
JPS5677379A (en) Metal film depositing apparatus
Zlatanović et al. Deposition of hard coatings in open magnetic field confined plasma
EP0032709A3 (en) Apparatus and method for the (patterned) coating of a substrate by cathodic sputtering and use thereof
JPH03111565A (ja) 連続式バイアススパツタリング装置

Legal Events

Date Code Title Description
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 22/04/2008, OBSERVADAS AS CONDICOES LEGAIS.

B21A Patent or certificate of addition expired [chapter 21.1 patent gazette]