KR970023537A - 진공으로 기판을 코팅하는 장치 - Google Patents
진공으로 기판을 코팅하는 장치 Download PDFInfo
- Publication number
- KR970023537A KR970023537A KR1019960032951A KR19960032951A KR970023537A KR 970023537 A KR970023537 A KR 970023537A KR 1019960032951 A KR1019960032951 A KR 1019960032951A KR 19960032951 A KR19960032951 A KR 19960032951A KR 970023537 A KR970023537 A KR 970023537A
- Authority
- KR
- South Korea
- Prior art keywords
- resistance
- cathode
- power
- cathodes
- peak
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Liquid Crystal (AREA)
- Laminated Bodies (AREA)
- Formation Of Insulating Films (AREA)
Abstract
진공으로 기판(14)을 코팅하는 장치에 있어서, 이 장치는 가스방전으로 스퍼터되는 타겟과 전기적으로 상호작용하는 비어있는 코팅챔버(15)안에 배치된 2개의 음극(6,7)에 연결되어 있고 그 스퍼터된 입자가 기판(14)상에 침착하는 교류전류원(2)으로 이루어져 있는 한편, 프로세스가스가 코팅챔버(15)내로 이동되어지고, 그리고 필터로서 역할을 하고 변압기(3)와추가의 코일(5, 12, 13) 및 콘덴서(4, 8, 9, 10, 11)로 이루어져 있고, 안정한 코팅프로세스를 확보한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 음극쌍을 위한 전원의 개략 다이어프램.
Claims (5)
- 진공에서 기판(14)을 코팅하는 장치에 있어서, 스퍼터되는 타겟과 전기적으로 상호 작용하는 비어있는 코팅챔버(15)안에 배치된 2개의 음극(6,7)에 연결되어 있고 그 스퍼터된 입자가 기판(14)상에 침착하는 교류전류원(2)으로 이루어져 있는 한편, 프로세스 가스가 코팅챔버(15)내로 이동될수 있고, 그리고 교류전류원(2)과 음극쌍 (6,7)사이에서 필터로서 역할을 하고 변압기(3)와 추가의 코일 및 콘덴서로 이루어진 네트워크(1)가 배치되어 있고 그리고 교류전류원(2)의 진동수가 필터의 어떤 자연 진동수와도 다르고, 그리고 교류전류에 대해서 가스방전을 형성하는 음극저항(r)의 함수로서 음극전력(P)의 특성이 작업점(A)에서 음극저항이 최고점(M)에서의 저항과 다르고 네트워크(1)의 임프던스가 하나의 프로세스 상태로부터 다른 프로세스 상태로의 변화를 방해하는 정도로 선택되는 최고점을 가지고 있는 것을 특징으로 하는 장치.
- 제1항에 있어서, 음극전력과 음극저항간의 관계가 식 P(r) = r/(bo + b2r2)로 표시되는 것을 특징으초 하는 장치.
- 제1항 또는 제2항에 있어서, 전력최고점(M)에서 저항은 작업점(A)에서 음극저항이 대략 2배 더 크도록 선택되는 것을 특징으로 하는 장치.
- 제1항 내지 제3항중의 어느 한 항에 있어서, 음극으로부터 네트워크쪽으로 측정된 임피던스가 유도적인 것을 특징으로 하는 장치.
- 제1항 내지 제4항중의 어느 한항에 있어서, 음극(6, 7)의 모든 프로세스상태에서의 음극저항의 전력최고점(M)에서 저항보다 각각 더 크거나 또는 작은 것을 특징으로 하는 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19537212A DE19537212A1 (de) | 1994-10-06 | 1995-10-06 | Vorrichtung zum Beschichten von Substraten im Vakuum |
DE19537212.3 | 1995-10-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970023537A true KR970023537A (ko) | 1997-05-30 |
KR100235573B1 KR100235573B1 (ko) | 1999-12-15 |
Family
ID=7774164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960032951A KR100235573B1 (ko) | 1995-10-06 | 1996-08-08 | 진공으로 기판을 코팅하는 장치 |
Country Status (12)
Country | Link |
---|---|
US (1) | US5807470A (ko) |
EP (1) | EP0767483B1 (ko) |
JP (1) | JP3442589B2 (ko) |
KR (1) | KR100235573B1 (ko) |
CN (1) | CN1074582C (ko) |
AT (1) | ATE183019T1 (ko) |
BR (1) | BR9605001A (ko) |
CA (1) | CA2184432C (ko) |
DE (2) | DE19537212A1 (ko) |
ES (1) | ES2134538T3 (ko) |
SG (1) | SG40883A1 (ko) |
TW (1) | TW413831B (ko) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19605932A1 (de) * | 1996-02-17 | 1997-08-21 | Leybold Systems Gmbh | Verfahren zum Ablagern einer optisch transparenten und elektrisch leitenden Schicht auf einem Substrat aus durchscheinendem Werkstoff |
DE19651615C1 (de) * | 1996-12-12 | 1997-07-10 | Fraunhofer Ges Forschung | Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern |
DE19651811B4 (de) * | 1996-12-13 | 2006-08-31 | Unaxis Deutschland Holding Gmbh | Vorrichtung zum Belegen eines Substrats mit dünnen Schichten |
DE19956733A1 (de) | 1999-11-25 | 2001-06-28 | Fraunhofer Ges Forschung | Verfahren zur Regelung von Sputterprozessen |
DE10154229B4 (de) | 2001-11-07 | 2004-08-05 | Applied Films Gmbh & Co. Kg | Einrichtung für die Regelung einer Plasmaimpedanz |
US7298091B2 (en) * | 2002-02-01 | 2007-11-20 | The Regents Of The University Of California | Matching network for RF plasma source |
DE10306347A1 (de) * | 2003-02-15 | 2004-08-26 | Hüttinger Elektronik GmbH & Co. KG | Leistungszufuhrregeleinheit |
US6967305B2 (en) * | 2003-08-18 | 2005-11-22 | Mks Instruments, Inc. | Control of plasma transitions in sputter processing systems |
JP4658506B2 (ja) * | 2004-03-31 | 2011-03-23 | 浩史 滝川 | パルスアークプラズマ生成用電源回路及びパルスアークプラズマ処理装置 |
EP1720195B1 (de) * | 2005-05-06 | 2012-12-12 | HÜTTINGER Elektronik GmbH + Co. KG | Arcunterdrückungsanordnung |
EP2326151A1 (fr) * | 2009-11-24 | 2011-05-25 | AGC Glass Europe | Procédé et dispositif de polarisation d'une électrode DBD |
KR20220031132A (ko) * | 2017-06-27 | 2022-03-11 | 캐논 아네르바 가부시키가이샤 | 플라스마 처리 장치 |
JP6458206B1 (ja) * | 2017-06-27 | 2019-01-23 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
TWI693860B (zh) * | 2017-06-27 | 2020-05-11 | 日商佳能安內華股份有限公司 | 電漿處理裝置 |
WO2019003309A1 (ja) | 2017-06-27 | 2019-01-03 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
US20190341235A1 (en) * | 2018-05-06 | 2019-11-07 | Advanced Energy Industries Inc. | Apparatus, system and method to reduce crazing |
SG11202009122YA (en) * | 2018-06-26 | 2020-10-29 | Canon Anelva Corp | Plasma processing apparatus, plasma processing method, program, and memory medium |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4887005A (en) * | 1987-09-15 | 1989-12-12 | Rough J Kirkwood H | Multiple electrode plasma reactor power distribution system |
JPH01268869A (ja) * | 1988-04-20 | 1989-10-26 | Fuji Photo Film Co Ltd | スパッタリング装置 |
DE3923661A1 (de) * | 1989-07-18 | 1991-01-24 | Leybold Ag | Schaltungsanordnung fuer die anpassung der impedanz einer plasmastrecke an einen hochfrequenzgenerator |
DE4042287C2 (de) * | 1990-12-31 | 1999-10-28 | Leybold Ag | Vorrichtung zum reaktiven Aufstäuben von elektrisch isolierendem Werkstoff |
DE4106770C2 (de) * | 1991-03-04 | 1996-10-17 | Leybold Ag | Verrichtung zum reaktiven Beschichten eines Substrats |
US5281321A (en) * | 1991-08-20 | 1994-01-25 | Leybold Aktiengesellschaft | Device for the suppression of arcs |
US5240584A (en) * | 1991-11-07 | 1993-08-31 | Leybold Aktiengesellschaft | Apparatus for the reactive coating of a substrate |
US5415757A (en) * | 1991-11-26 | 1995-05-16 | Leybold Aktiengesellschaft | Apparatus for coating a substrate with electrically nonconductive coatings |
DE4138794A1 (de) * | 1991-11-26 | 1993-05-27 | Leybold Ag | Verfahren und vorrichtung zum beschichten eines substrats, insbesondere mit elektrisch nichtleitenden schichten |
DE4237517A1 (de) * | 1992-11-06 | 1994-05-11 | Leybold Ag | Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten |
US5512164A (en) * | 1993-06-03 | 1996-04-30 | The United States Of America As Represented By The United States Department Of Energy | Method for sputtering with low frequency alternating current |
-
1995
- 1995-10-06 DE DE19537212A patent/DE19537212A1/de not_active Withdrawn
-
1996
- 1996-06-27 AT AT96110337T patent/ATE183019T1/de active
- 1996-06-27 DE DE59602601T patent/DE59602601D1/de not_active Expired - Lifetime
- 1996-06-27 EP EP96110337A patent/EP0767483B1/de not_active Expired - Lifetime
- 1996-06-27 ES ES96110337T patent/ES2134538T3/es not_active Expired - Lifetime
- 1996-07-05 TW TW085108121A patent/TW413831B/zh active
- 1996-07-24 SG SG1996010302A patent/SG40883A1/en unknown
- 1996-08-01 US US08/690,835 patent/US5807470A/en not_active Expired - Lifetime
- 1996-08-08 KR KR1019960032951A patent/KR100235573B1/ko not_active IP Right Cessation
- 1996-08-29 CA CA002184432A patent/CA2184432C/en not_active Expired - Lifetime
- 1996-09-28 CN CN96122829A patent/CN1074582C/zh not_active Expired - Lifetime
- 1996-10-04 BR BR9605001A patent/BR9605001A/pt not_active IP Right Cessation
- 1996-10-04 JP JP26452496A patent/JP3442589B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE19537212A1 (de) | 1996-04-11 |
SG40883A1 (en) | 1997-06-14 |
US5807470A (en) | 1998-09-15 |
ES2134538T3 (es) | 1999-10-01 |
EP0767483B1 (de) | 1999-08-04 |
CA2184432A1 (en) | 1997-04-07 |
EP0767483A1 (de) | 1997-04-09 |
BR9605001A (pt) | 1998-06-23 |
KR100235573B1 (ko) | 1999-12-15 |
CA2184432C (en) | 2006-01-24 |
JPH09111449A (ja) | 1997-04-28 |
DE59602601D1 (de) | 1999-09-09 |
CN1074582C (zh) | 2001-11-07 |
JP3442589B2 (ja) | 2003-09-02 |
CN1155748A (zh) | 1997-07-30 |
TW413831B (en) | 2000-12-01 |
ATE183019T1 (de) | 1999-08-15 |
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