ES2105386T3 - Aparato para la deposicion a vapor de un plasma reactivo de corriente continua de un material electricamente aislante empleando para ello un anodo blindado. - Google Patents

Aparato para la deposicion a vapor de un plasma reactivo de corriente continua de un material electricamente aislante empleando para ello un anodo blindado.

Info

Publication number
ES2105386T3
ES2105386T3 ES94104782T ES94104782T ES2105386T3 ES 2105386 T3 ES2105386 T3 ES 2105386T3 ES 94104782 T ES94104782 T ES 94104782T ES 94104782 T ES94104782 T ES 94104782T ES 2105386 T3 ES2105386 T3 ES 2105386T3
Authority
ES
Spain
Prior art keywords
electrically insulating
sputtering
plasma
insulating material
sputtered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES94104782T
Other languages
English (en)
Inventor
Homoyoun Talieh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ES2105386T3 publication Critical patent/ES2105386T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Polymerisation Methods In General (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

EN UN REACTOR DE DEPOSICION DE VAPOR DE PLASMA PARA DEPOSITAR UN MATERIAL ELECTRICAMENTE AISLANTE SEGUN UN PROCESO DE PULVERIZACION DE CC EL PLASMA SE ESTABILIZA, MANTENIENDO SU EFICIENCIA DE PULVERIZACION GRACIAS A LA PRESENCIA DE UN ANODO SECUNDARIO (22), PREFERENTEMENTE MANTENIDO A UNA POLARIZACION POSITIVA RESPECTO AL ANODO PRIMARIO (15). EL ANODO SECUNDARIO (22) SE BLINDA DE LA EXPOSICION AL CHORRO DE MATERIAL PULVERIZADO SI BIEN QUEDA SITUADO LO SUFICIENTEMENTE CERCA DE LA DESCARGA DE PLASMA PARA ATRAER A LOS ELECTRONES DEL PLASMA Y MANTENER ASI SU EQUILIBRIO DE CARGA. EN UNA PULVERIZACION REACTIVA, LA CAMARA DE PULVERIZACION (10) CONTIENE TANTO UN GAS DE PULVERIZACION, POR EJEMPLO ARGON, Y UN GAS REACTIVO, POR EJEMPLO OXIGENO. LOS IONES POSITIVOS DEL GAS DE PULVERIZACION BOMBARDEAN UN BLANCO (17) DEL MATERIAL A PULVERIZAR. LOS ATOMOS DEL MATERIAL OBJETIVO, LOS ATOMOS PULVERIZADOS, SON EMITIDOS DESDE EL BLANCO (17) EN TODAS LAS DIRECCIONES HASTA ENTRAR EN LA CAMARA, ALGUNOS DE LOS CUALES CAEN SOBRE LA SUPERFICIE DEL SUSTRATO A REVESTIR POR PULVERIZACION. EN LA SUPERFICIE O EN LA CAMARA (10) SE COMBINAN QUIMICAMENTE CON EL GAS REACTIVO. EN EL CASO QUE SE PRESENTA EN ESTA INVENCION, LA COMBINACION QUIMICA FORMA UN REVESTIMIENTO ELECTRICAMENTE AISLANTE SOBRE EL SUSTRATO (19). EL MISMO MATERIAL ELECTRICAMENTE AISLANTE REVISTE EL RESTO DE LAS SUPERFICIES EXPUESTAS AL FLUJO DE ATOMOS PULVERIZADOS. EN UN ASPECTO DE LA INVENCION, EL ANODO SECUNDARIO POSITIVAMENTE POLARIZADO BLINDADO DE LOS ATOMOS PULVERIZADOS NO SE REVISTE CON EL MATERIAL ELECTRICAMENTE AISLANTE, CON LO CUAL MANTIENE SU CAPACIDAD DE SACAR LOS ELECTRONES DEL PLASMA.
ES94104782T 1993-04-02 1994-03-25 Aparato para la deposicion a vapor de un plasma reactivo de corriente continua de un material electricamente aislante empleando para ello un anodo blindado. Expired - Lifetime ES2105386T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/042,035 US6296743B1 (en) 1993-04-02 1993-04-02 Apparatus for DC reactive plasma vapor deposition of an electrically insulating material using a shielded secondary anode

Publications (1)

Publication Number Publication Date
ES2105386T3 true ES2105386T3 (es) 1997-10-16

Family

ID=21919699

Family Applications (1)

Application Number Title Priority Date Filing Date
ES94104782T Expired - Lifetime ES2105386T3 (es) 1993-04-02 1994-03-25 Aparato para la deposicion a vapor de un plasma reactivo de corriente continua de un material electricamente aislante empleando para ello un anodo blindado.

Country Status (7)

Country Link
US (1) US6296743B1 (es)
EP (1) EP0618606B1 (es)
JP (1) JPH06346236A (es)
KR (1) KR100326503B1 (es)
AT (1) ATE154162T1 (es)
DE (1) DE69403538T2 (es)
ES (1) ES2105386T3 (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH691686A5 (de) * 1995-11-16 2001-09-14 Unaxis Balzers Ag Vakuumbehandlungskammer.
US6254746B1 (en) 1996-05-09 2001-07-03 Applied Materials, Inc. Recessed coil for generating a plasma
JP3175835B2 (ja) * 1996-05-09 2001-06-11 アプライド マテリアルズ， インコーポレイテッド プラズマ発生用埋込み形コイル
DE19757353C1 (de) * 1997-12-22 1999-07-29 Fraunhofer Ges Forschung Einrichtung zum Betreiben einer Niederdruckentladung
JP4717186B2 (ja) * 2000-07-25 2011-07-06 株式会社アルバック スパッタリング装置
JP4703828B2 (ja) * 2000-09-07 2011-06-15 株式会社アルバック スパッタリング装置及び薄膜製造方法
US6495000B1 (en) * 2001-07-16 2002-12-17 Sharp Laboratories Of America, Inc. System and method for DC sputtering oxide films with a finned anode
JP2004018896A (ja) * 2002-06-13 2004-01-22 Matsushita Electric Ind Co Ltd スパッタ膜の成膜方法
US8038850B2 (en) 2006-06-23 2011-10-18 Qimonda Ag Sputter deposition method for forming integrated circuit
CN107614737A (zh) * 2015-03-18 2018-01-19 视觉缓解公司 阳极防护罩

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4038171A (en) * 1976-03-31 1977-07-26 Battelle Memorial Institute Supported plasma sputtering apparatus for high deposition rate over large area
DE3427587A1 (de) 1984-07-26 1986-02-06 Leybold-Heraeus GmbH, 5000 Köln Zerstaeubungseinrichtung fuer katodenzerstaeubungsanlagen
DE3611492A1 (de) * 1986-04-05 1987-10-22 Leybold Heraeus Gmbh & Co Kg Verfahren und vorrichtung zum beschichten von werkzeugen fuer die zerspanungs- und umformtechnik mit hartstoffschichten
DE3612721C3 (de) 1986-04-16 1994-07-14 Ver Glaswerke Gmbh Durchlauf-Kathodenzerstäubungsanlage
DE4042289A1 (de) * 1990-12-31 1992-07-02 Leybold Ag Verfahren und vorrichtung zum reaktiven beschichten eines substrats
DE4125365C1 (es) 1991-07-31 1992-05-21 Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De

Also Published As

Publication number Publication date
EP0618606B1 (en) 1997-06-04
KR100326503B1 (ko) 2002-06-20
DE69403538D1 (de) 1997-07-10
JPH06346236A (ja) 1994-12-20
US6296743B1 (en) 2001-10-02
EP0618606A1 (en) 1994-10-05
ATE154162T1 (de) 1997-06-15
DE69403538T2 (de) 1998-01-29

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