ATE154162T1 - Vorrichtung zur reaktiven plasmagasphasenabscheidung eines elektrisch nichtleitenden materials unter verwendung einer abgeschirmten sekundäranode - Google Patents
Vorrichtung zur reaktiven plasmagasphasenabscheidung eines elektrisch nichtleitenden materials unter verwendung einer abgeschirmten sekundäranodeInfo
- Publication number
- ATE154162T1 ATE154162T1 AT94104782T AT94104782T ATE154162T1 AT E154162 T1 ATE154162 T1 AT E154162T1 AT 94104782 T AT94104782 T AT 94104782T AT 94104782 T AT94104782 T AT 94104782T AT E154162 T1 ATE154162 T1 AT E154162T1
- Authority
- AT
- Austria
- Prior art keywords
- sputtering
- plasma
- electrically insulating
- sputtered
- secondary anode
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title 1
- 239000012811 non-conductive material Substances 0.000 title 1
- 238000004544 sputter deposition Methods 0.000 abstract 5
- 239000007789 gas Substances 0.000 abstract 4
- 239000012777 electrically insulating material Substances 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 238000005546 reactive sputtering Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000013077 target material Substances 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Polymerisation Methods In General (AREA)
- Coating By Spraying Or Casting (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/042,035 US6296743B1 (en) | 1993-04-02 | 1993-04-02 | Apparatus for DC reactive plasma vapor deposition of an electrically insulating material using a shielded secondary anode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE154162T1 true ATE154162T1 (de) | 1997-06-15 |
Family
ID=21919699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT94104782T ATE154162T1 (de) | 1993-04-02 | 1994-03-25 | Vorrichtung zur reaktiven plasmagasphasenabscheidung eines elektrisch nichtleitenden materials unter verwendung einer abgeschirmten sekundäranode |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6296743B1 (de) |
| EP (1) | EP0618606B1 (de) |
| JP (1) | JPH06346236A (de) |
| KR (1) | KR100326503B1 (de) |
| AT (1) | ATE154162T1 (de) |
| DE (1) | DE69403538T2 (de) |
| ES (1) | ES2105386T3 (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH691686A5 (de) * | 1995-11-16 | 2001-09-14 | Unaxis Balzers Ag | Vakuumbehandlungskammer. |
| US6254746B1 (en) | 1996-05-09 | 2001-07-03 | Applied Materials, Inc. | Recessed coil for generating a plasma |
| KR100489917B1 (ko) * | 1996-05-09 | 2005-08-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마생성용코일을지지하는스탠드오프및코일지지방법 |
| DE19757353C1 (de) * | 1997-12-22 | 1999-07-29 | Fraunhofer Ges Forschung | Einrichtung zum Betreiben einer Niederdruckentladung |
| JP4717186B2 (ja) * | 2000-07-25 | 2011-07-06 | 株式会社アルバック | スパッタリング装置 |
| JP4703828B2 (ja) * | 2000-09-07 | 2011-06-15 | 株式会社アルバック | スパッタリング装置及び薄膜製造方法 |
| US6495000B1 (en) * | 2001-07-16 | 2002-12-17 | Sharp Laboratories Of America, Inc. | System and method for DC sputtering oxide films with a finned anode |
| JP2004018896A (ja) * | 2002-06-13 | 2004-01-22 | Matsushita Electric Ind Co Ltd | スパッタ膜の成膜方法 |
| DE102006028977B4 (de) | 2006-06-23 | 2012-04-12 | Qimonda Ag | Sputterdepositions-Vorrichtung |
| AU2016232864A1 (en) * | 2015-03-18 | 2017-08-17 | Vision Ease, Lp | Anode shield |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4038171A (en) * | 1976-03-31 | 1977-07-26 | Battelle Memorial Institute | Supported plasma sputtering apparatus for high deposition rate over large area |
| DE3427587A1 (de) * | 1984-07-26 | 1986-02-06 | Leybold-Heraeus GmbH, 5000 Köln | Zerstaeubungseinrichtung fuer katodenzerstaeubungsanlagen |
| DE3611492A1 (de) * | 1986-04-05 | 1987-10-22 | Leybold Heraeus Gmbh & Co Kg | Verfahren und vorrichtung zum beschichten von werkzeugen fuer die zerspanungs- und umformtechnik mit hartstoffschichten |
| DE3612721C3 (de) | 1986-04-16 | 1994-07-14 | Ver Glaswerke Gmbh | Durchlauf-Kathodenzerstäubungsanlage |
| DE4042289A1 (de) | 1990-12-31 | 1992-07-02 | Leybold Ag | Verfahren und vorrichtung zum reaktiven beschichten eines substrats |
| DE4125365C1 (de) | 1991-07-31 | 1992-05-21 | Multi-Arc Oberflaechentechnik Gmbh, 5060 Bergisch Gladbach, De |
-
1993
- 1993-04-02 US US08/042,035 patent/US6296743B1/en not_active Expired - Fee Related
-
1994
- 1994-03-25 ES ES94104782T patent/ES2105386T3/es not_active Expired - Lifetime
- 1994-03-25 EP EP94104782A patent/EP0618606B1/de not_active Expired - Lifetime
- 1994-03-25 DE DE69403538T patent/DE69403538T2/de not_active Expired - Fee Related
- 1994-03-25 AT AT94104782T patent/ATE154162T1/de not_active IP Right Cessation
- 1994-04-01 KR KR1019940006868A patent/KR100326503B1/ko not_active Expired - Fee Related
- 1994-04-04 JP JP6066101A patent/JPH06346236A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0618606A1 (de) | 1994-10-05 |
| KR100326503B1 (ko) | 2002-06-20 |
| US6296743B1 (en) | 2001-10-02 |
| DE69403538T2 (de) | 1998-01-29 |
| EP0618606B1 (de) | 1997-06-04 |
| ES2105386T3 (es) | 1997-10-16 |
| DE69403538D1 (de) | 1997-07-10 |
| JPH06346236A (ja) | 1994-12-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |