BR8705231A - Estrutura e celula de capacitor em trincheira de semicondutor com construcao de fusao de isolamento e de trincheira de no,matriz feita com tais celulas e metodo de producao de dita estrutura - Google Patents

Estrutura e celula de capacitor em trincheira de semicondutor com construcao de fusao de isolamento e de trincheira de no,matriz feita com tais celulas e metodo de producao de dita estrutura

Info

Publication number
BR8705231A
BR8705231A BR8705231A BR8705231A BR8705231A BR 8705231 A BR8705231 A BR 8705231A BR 8705231 A BR8705231 A BR 8705231A BR 8705231 A BR8705231 A BR 8705231A BR 8705231 A BR8705231 A BR 8705231A
Authority
BR
Brazil
Prior art keywords
trusch
truck
insulation
cells
semiconductor
Prior art date
Application number
BR8705231A
Other languages
English (en)
Inventor
Donald Mcalpine Kenney
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of BR8705231A publication Critical patent/BR8705231A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
BR8705231A 1986-10-31 1987-10-02 Estrutura e celula de capacitor em trincheira de semicondutor com construcao de fusao de isolamento e de trincheira de no,matriz feita com tais celulas e metodo de producao de dita estrutura BR8705231A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/925,570 US4801988A (en) 1986-10-31 1986-10-31 Semiconductor trench capacitor cell with merged isolation and node trench construction

Publications (1)

Publication Number Publication Date
BR8705231A true BR8705231A (pt) 1988-05-24

Family

ID=25451925

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8705231A BR8705231A (pt) 1986-10-31 1987-10-02 Estrutura e celula de capacitor em trincheira de semicondutor com construcao de fusao de isolamento e de trincheira de no,matriz feita com tais celulas e metodo de producao de dita estrutura

Country Status (5)

Country Link
US (1) US4801988A (pt)
EP (1) EP0265616B1 (pt)
JP (1) JPH06105767B2 (pt)
BR (1) BR8705231A (pt)
DE (1) DE3788499T2 (pt)

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US5448090A (en) * 1994-08-03 1995-09-05 International Business Machines Corporation Structure for reducing parasitic leakage in a memory array with merged isolation and node trench construction
US5627092A (en) * 1994-09-26 1997-05-06 Siemens Aktiengesellschaft Deep trench dram process on SOI for low leakage DRAM cell
US5508542A (en) * 1994-10-28 1996-04-16 International Business Machines Corporation Porous silicon trench and capacitor structures
US5936271A (en) * 1994-11-15 1999-08-10 Siemens Aktiengesellschaft Unit cell layout and transfer gate design for high density DRAMs having a trench capacitor with signal electrode composed of three differently doped polysilicon layers
US5895255A (en) * 1994-11-30 1999-04-20 Kabushiki Kaisha Toshiba Shallow trench isolation formation with deep trench cap
US5545581A (en) * 1994-12-06 1996-08-13 International Business Machines Corporation Plug strap process utilizing selective nitride and oxide etches
US5641694A (en) * 1994-12-22 1997-06-24 International Business Machines Corporation Method of fabricating vertical epitaxial SOI transistor
US6252267B1 (en) 1994-12-28 2001-06-26 International Business Machines Corporation Five square folded-bitline DRAM cell
US5576566A (en) * 1995-04-13 1996-11-19 International Business Machines Corporation Semiconductor trench capacitor cell having a buried strap
US5545583A (en) * 1995-04-13 1996-08-13 International Business Machines Corporation Method of making semiconductor trench capacitor cell having a buried strap
US5885425A (en) * 1995-06-06 1999-03-23 International Business Machines Corporation Method for selective material deposition on one side of raised or recessed features
US5731941A (en) * 1995-09-08 1998-03-24 International Business Machines Corporation Electrostatic discharge suppression circuit employing trench capacitor
US5908310A (en) 1995-12-27 1999-06-01 International Business Machines Corporation Method to form a buried implanted plate for DRAM trench storage capacitors
US5684313A (en) * 1996-02-20 1997-11-04 Kenney; Donald M. Vertical precharge structure for DRAM
US5656535A (en) * 1996-03-04 1997-08-12 Siemens Aktiengesellschaft Storage node process for deep trench-based DRAM
US5684314A (en) * 1996-03-18 1997-11-04 Kenney; Donald M. Trench capacitor precharge structure and leakage shield
US5748547A (en) * 1996-05-24 1998-05-05 Shau; Jeng-Jye High performance semiconductor memory devices having multiple dimension bit lines
US20050036363A1 (en) * 1996-05-24 2005-02-17 Jeng-Jye Shau High performance embedded semiconductor memory devices with multiple dimension first-level bit-lines
US5923971A (en) * 1996-10-22 1999-07-13 International Business Machines Corporation Reliable low resistance strap for trench storage DRAM cell using selective epitaxy
US5953607A (en) * 1997-06-06 1999-09-14 International Business Machines Corporation Buried strap for trench storage capacitors in dram trench cells
JP3132435B2 (ja) * 1997-09-22 2001-02-05 日本電気株式会社 半導体装置の製造方法
US5990511A (en) * 1997-10-16 1999-11-23 International Business Machines Corporation Memory cell with transfer device node in selective polysilicon
DE19752968C1 (de) * 1997-11-28 1999-06-24 Siemens Ag Speicherzellenanordnung und Verfahren zu deren Herstellung
US6236079B1 (en) 1997-12-02 2001-05-22 Kabushiki Kaisha Toshiba Dynamic semiconductor memory device having a trench capacitor
US6699794B1 (en) * 1998-03-09 2004-03-02 Siemens Aktiengesellschaft Self aligned buried plate
KR100289749B1 (ko) * 1998-05-12 2001-05-15 윤종용 도전패드형성방법
US5949700A (en) * 1998-05-26 1999-09-07 International Business Machines Corporation Five square vertical dynamic random access memory cell
US6107133A (en) * 1998-05-28 2000-08-22 International Business Machines Corporation Method for making a five square vertical DRAM cell
US6225158B1 (en) 1998-05-28 2001-05-01 International Business Machines Corporation Trench storage dynamic random access memory cell with vertical transfer device
US6121651A (en) * 1998-07-30 2000-09-19 International Business Machines Corporation Dram cell with three-sided-gate transfer device
US6110792A (en) * 1998-08-19 2000-08-29 International Business Machines Corporation Method for making DRAM capacitor strap
JP3580719B2 (ja) * 1999-03-03 2004-10-27 株式会社東芝 半導体記憶装置及びその製造方法
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Also Published As

Publication number Publication date
JPS63122162A (ja) 1988-05-26
DE3788499D1 (de) 1994-01-27
JPH06105767B2 (ja) 1994-12-21
EP0265616A2 (en) 1988-05-04
DE3788499T2 (de) 1994-06-30
EP0265616B1 (en) 1993-12-15
EP0265616A3 (en) 1989-08-30
US4801988A (en) 1989-01-31

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Legal Events

Date Code Title Description
B21A Patent or certificate of addition expired [chapter 21.1 patent gazette]

Free format text: PATENTE EXTINTA EM 02/10/2002

B15K Others concerning applications: alteration of classification

Ipc: H01L 29/66 (2006.01), H01L 27/108 (2006.0