BR112018015353A2 - regulador de tensão de dissipação baixa com rejeição de fornecimento de energia aperfeiçoada - Google Patents
regulador de tensão de dissipação baixa com rejeição de fornecimento de energia aperfeiçoadaInfo
- Publication number
- BR112018015353A2 BR112018015353A2 BR112018015353A BR112018015353A BR112018015353A2 BR 112018015353 A2 BR112018015353 A2 BR 112018015353A2 BR 112018015353 A BR112018015353 A BR 112018015353A BR 112018015353 A BR112018015353 A BR 112018015353A BR 112018015353 A2 BR112018015353 A2 BR 112018015353A2
- Authority
- BR
- Brazil
- Prior art keywords
- voltage
- voltage regulator
- improved power
- response
- low dissipation
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
em certos aspectos, um método para regulagem de tensão inclui ajustar, utilizando um circuito de resposta, uma resistência de um primeiro elemento de passagem em uma direção que reduz uma diferença entre uma tensão de referência e uma tensão de resposta, em que o primeiro elemento de passagem é acoplado entre uma entrada e uma saída de um regulador de tensão, e a tensão de resposta é igual a ou proporcional a uma tensão na saída do regulador de tensão. o método ainda inclui ajustar uma tensão de polarização do circuito de resposta em uma direção que reduz a diferença entre a tensão de referência e a tensão de resposta.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/009,600 | 2016-01-28 | ||
| US15/009,600 US9684325B1 (en) | 2016-01-28 | 2016-01-28 | Low dropout voltage regulator with improved power supply rejection |
| PCT/US2016/068436 WO2017131906A1 (en) | 2016-01-28 | 2016-12-22 | Low dropout voltage regulator with improved power supply rejection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BR112018015353A2 true BR112018015353A2 (pt) | 2018-12-18 |
| BR112018015353B1 BR112018015353B1 (pt) | 2023-02-23 |
Family
ID=57799865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR112018015353-2A BR112018015353B1 (pt) | 2016-01-28 | 2016-12-22 | Regulador de tensão de dissipação baixa com rejeição de fornecimento de energia aperfeiçoada |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9684325B1 (pt) |
| EP (2) | EP3889730A1 (pt) |
| JP (1) | JP6805259B2 (pt) |
| KR (1) | KR102356564B1 (pt) |
| CN (2) | CN112578842B (pt) |
| AU (1) | AU2016389095B2 (pt) |
| BR (1) | BR112018015353B1 (pt) |
| ES (1) | ES2890825T3 (pt) |
| TW (1) | TWI606321B (pt) |
| WO (1) | WO2017131906A1 (pt) |
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| US10382030B2 (en) * | 2017-07-12 | 2019-08-13 | Texas Instruments Incorporated | Apparatus having process, voltage and temperature-independent line transient management |
| US10013005B1 (en) * | 2017-08-31 | 2018-07-03 | Xilinx, Inc. | Low voltage regulator |
| CN107632658A (zh) * | 2017-10-30 | 2018-01-26 | 杭州洪芯微电子科技有限公司 | 高电源抑制比的低压差线性稳压器 |
| US10411599B1 (en) | 2018-03-28 | 2019-09-10 | Qualcomm Incorporated | Boost and LDO hybrid converter with dual-loop control |
| US10488875B1 (en) * | 2018-08-22 | 2019-11-26 | Nxp B.V. | Dual loop low dropout regulator system |
| CN108919874B (zh) * | 2018-08-30 | 2023-07-11 | 北京神经元网络技术有限公司 | 一种低压差线性稳压器 |
| US10444780B1 (en) | 2018-09-20 | 2019-10-15 | Qualcomm Incorporated | Regulation/bypass automation for LDO with multiple supply voltages |
| US10591938B1 (en) | 2018-10-16 | 2020-03-17 | Qualcomm Incorporated | PMOS-output LDO with full spectrum PSR |
| US10545523B1 (en) | 2018-10-25 | 2020-01-28 | Qualcomm Incorporated | Adaptive gate-biased field effect transistor for low-dropout regulator |
| US10809752B2 (en) * | 2018-12-10 | 2020-10-20 | Analog Devices International Unlimited Company | Bandgap voltage reference, and a precision voltage source including such a bandgap voltage reference |
| US11372436B2 (en) | 2019-10-14 | 2022-06-28 | Qualcomm Incorporated | Simultaneous low quiescent current and high performance LDO using single input stage and multiple output stages |
| US11029716B1 (en) * | 2020-02-18 | 2021-06-08 | Silicon Laboratories Inc. | Providing low power charge pump for integrated circuit |
| CN111414040A (zh) * | 2020-04-10 | 2020-07-14 | 上海兆芯集成电路有限公司 | 低压差线性稳压器 |
| JP7391791B2 (ja) * | 2020-08-12 | 2023-12-05 | 株式会社東芝 | 定電圧回路 |
| US11329559B2 (en) * | 2020-08-24 | 2022-05-10 | Nanya Technology Corporation | Low dropout regulator and control method thereof |
| US11658570B2 (en) * | 2020-09-01 | 2023-05-23 | Intel Corporation | Seamless non-linear voltage regulation control to linear control apparatus and method |
| US11630472B2 (en) | 2020-12-15 | 2023-04-18 | Texas Instruments Incorporated | Mitigation of transient effects for wide load ranges |
| CN113315089B (zh) * | 2021-05-27 | 2023-06-23 | 晶艺半导体有限公司 | 一种高电源抑制比负载开关电路及其控制方法 |
| WO2023095462A1 (ja) * | 2021-11-29 | 2023-06-01 | 国立大学法人大阪大学 | 定電圧回路及び電子機器 |
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| US5629609A (en) * | 1994-03-08 | 1997-05-13 | Texas Instruments Incorporated | Method and apparatus for improving the drop-out voltage in a low drop out voltage regulator |
| JP2000156616A (ja) * | 1998-11-19 | 2000-06-06 | Sony Corp | 多入力差動増幅回路 |
| US6246221B1 (en) | 2000-09-20 | 2001-06-12 | Texas Instruments Incorporated | PMOS low drop-out voltage regulator using non-inverting variable gain stage |
| US6465994B1 (en) | 2002-03-27 | 2002-10-15 | Texas Instruments Incorporated | Low dropout voltage regulator with variable bandwidth based on load current |
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| US7030595B2 (en) * | 2004-08-04 | 2006-04-18 | Nanopower Solutions Co., Ltd. | Voltage regulator having an inverse adaptive controller |
| US7323853B2 (en) | 2005-03-01 | 2008-01-29 | 02Micro International Ltd. | Low drop-out voltage regulator with common-mode feedback |
| US20060273771A1 (en) * | 2005-06-03 | 2006-12-07 | Micrel, Incorporated | Creating additional phase margin in the open loop gain of a negative feedback amplifier system |
| US7199565B1 (en) * | 2006-04-18 | 2007-04-03 | Atmel Corporation | Low-dropout voltage regulator with a voltage slew rate efficient transient response boost circuit |
| US7446515B2 (en) | 2006-08-31 | 2008-11-04 | Texas Instruments Incorporated | Compensating NMOS LDO regulator using auxiliary amplifier |
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| US8289009B1 (en) * | 2009-11-09 | 2012-10-16 | Texas Instruments Incorporated | Low dropout (LDO) regulator with ultra-low quiescent current |
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| US8575905B2 (en) | 2010-06-24 | 2013-11-05 | International Business Machines Corporation | Dual loop voltage regulator with bias voltage capacitor |
| US9110488B2 (en) | 2011-06-07 | 2015-08-18 | International Business Machines Corporation | Wide-bandwidth linear regulator |
| CN102354243B (zh) * | 2011-08-11 | 2014-03-12 | 中国科学院上海高等研究院 | 集成式线性稳压器 |
| CN102393781A (zh) | 2011-12-06 | 2012-03-28 | 四川和芯微电子股份有限公司 | 低压差线性稳压电路及系统 |
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| EP2857923B1 (en) * | 2013-10-07 | 2020-04-29 | Dialog Semiconductor GmbH | An apparatus and method for a voltage regulator with improved output voltage regulated loop biasing |
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| JP6306439B2 (ja) * | 2014-06-05 | 2018-04-04 | 日本電信電話株式会社 | シリーズレギュレータ回路 |
| CN104181972B (zh) | 2014-09-05 | 2015-12-30 | 电子科技大学 | 一种具有高电源抑制比特性的低压差线性稳压器 |
| CN104808734B (zh) * | 2015-02-17 | 2016-04-06 | 唯捷创芯(天津)电子技术有限公司 | 一种宽耐压范围的自适应低压差线性稳压器及其芯片 |
| CN104699161B (zh) * | 2015-03-27 | 2017-06-06 | 西安紫光国芯半导体有限公司 | 一种根据负载频率和输出电压动态调整偏置电流的稳压器 |
-
2016
- 2016-01-28 US US15/009,600 patent/US9684325B1/en active Active
- 2016-12-22 CN CN202011449454.9A patent/CN112578842B/zh active Active
- 2016-12-22 JP JP2018539145A patent/JP6805259B2/ja active Active
- 2016-12-22 AU AU2016389095A patent/AU2016389095B2/en active Active
- 2016-12-22 WO PCT/US2016/068436 patent/WO2017131906A1/en active Application Filing
- 2016-12-22 EP EP21176022.8A patent/EP3889730A1/en active Pending
- 2016-12-22 ES ES16826590T patent/ES2890825T3/es active Active
- 2016-12-22 EP EP16826590.8A patent/EP3408724B1/en active Active
- 2016-12-22 KR KR1020187021356A patent/KR102356564B1/ko active IP Right Grant
- 2016-12-22 CN CN201680080535.1A patent/CN108700906B/zh active Active
- 2016-12-22 BR BR112018015353-2A patent/BR112018015353B1/pt active IP Right Grant
- 2016-12-26 TW TW105143144A patent/TWI606321B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3408724B1 (en) | 2021-09-01 |
| CN108700906B (zh) | 2020-12-25 |
| AU2016389095B2 (en) | 2020-09-10 |
| US9684325B1 (en) | 2017-06-20 |
| CN112578842B (zh) | 2023-04-07 |
| ES2890825T3 (es) | 2022-01-24 |
| KR102356564B1 (ko) | 2022-01-26 |
| CN108700906A (zh) | 2018-10-23 |
| JP6805259B2 (ja) | 2020-12-23 |
| KR20180105656A (ko) | 2018-09-28 |
| EP3408724A1 (en) | 2018-12-05 |
| JP2019507427A (ja) | 2019-03-14 |
| BR112018015353B1 (pt) | 2023-02-23 |
| TW201737008A (zh) | 2017-10-16 |
| TWI606321B (zh) | 2017-11-21 |
| AU2016389095A1 (en) | 2018-07-19 |
| WO2017131906A1 (en) | 2017-08-03 |
| EP3889730A1 (en) | 2021-10-06 |
| CN112578842A (zh) | 2021-03-30 |
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Legal Events
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| B350 | Update of information on the portal [chapter 15.35 patent gazette] | ||
| B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
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Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 22/12/2016, OBSERVADAS AS CONDICOES LEGAIS |