BR112016016538A2 - Polarização de amplificador dependente da temperatura - Google Patents

Polarização de amplificador dependente da temperatura

Info

Publication number
BR112016016538A2
BR112016016538A2 BR112016016538A BR112016016538A BR112016016538A2 BR 112016016538 A2 BR112016016538 A2 BR 112016016538A2 BR 112016016538 A BR112016016538 A BR 112016016538A BR 112016016538 A BR112016016538 A BR 112016016538A BR 112016016538 A2 BR112016016538 A2 BR 112016016538A2
Authority
BR
Brazil
Prior art keywords
bias circuit
temperature dependent
output
dependent amplifier
temperature
Prior art date
Application number
BR112016016538A
Other languages
English (en)
Inventor
Park Jungdong
wang Cheng-han
Sun Kim Hong
Bagher Vahid Far Mohammad
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of BR112016016538A2 publication Critical patent/BR112016016538A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/303—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters using a switching device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)

Abstract

POLARIZAÇÃO DE AMPLIFICADOR DEPENDENTE DA TEMPERATURA. A aparelhagem inclui um primeiro circuito de polarização configurado para gerar uma primeira corrente que varia com a temperatura de acordo com um primeiro declive. A aparelhagem inclui ainda um segundo circuito de polarização configurado para gerar uma segunda corrente que varia com a temperatura de acordo com um segundo declive. A aparelhagem inclui ainda um amplificador de baixo ruído incluindo um estágio de transcondutância que responde a uma saída do primeiro circuito de polarização. A aparelhagem inclui também uma carga acoplada a uma saída do amplificador de baixo ruído e responde a uma saída do segundo circuito de polarização.
BR112016016538A 2014-01-17 2015-01-08 Polarização de amplificador dependente da temperatura BR112016016538A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/158,318 US9401680B2 (en) 2014-01-17 2014-01-17 Temperature dependent amplifier biasing
PCT/US2015/010644 WO2015108755A1 (en) 2014-01-17 2015-01-08 Temperature dependent amplifier biasing

Publications (1)

Publication Number Publication Date
BR112016016538A2 true BR112016016538A2 (pt) 2017-08-08

Family

ID=52463134

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112016016538A BR112016016538A2 (pt) 2014-01-17 2015-01-08 Polarização de amplificador dependente da temperatura

Country Status (7)

Country Link
US (1) US9401680B2 (pt)
EP (1) EP3095188B1 (pt)
JP (1) JP6243048B2 (pt)
KR (1) KR101763233B1 (pt)
CN (1) CN106416059B (pt)
BR (1) BR112016016538A2 (pt)
WO (1) WO2015108755A1 (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105226766B (zh) * 2015-11-02 2017-08-18 中国工程物理研究院核物理与化学研究所 一种低噪声偏置器
CN108462476B (zh) * 2018-02-08 2022-04-12 芯原微电子(上海)股份有限公司 一种功率放大器及其功率控制方法
EP3667274A1 (en) * 2018-12-14 2020-06-17 Nxp B.V. Device and method for generating a proportional to absolute temperature (ptat) output current with adjustable slope
WO2020176132A1 (en) * 2019-09-05 2020-09-03 Huawei Technologies Co. Ltd. Reference signal generation for power amplifiers of rf transmitters and transceivers
KR20220036432A (ko) 2020-09-15 2022-03-23 삼성전자주식회사 메모리 장치 및 이의 제어 방법
CN113271068B (zh) * 2021-04-02 2023-03-14 西安电子科技大学 一种双电源电压跨导校准低功耗的低噪声放大器

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5448158A (en) 1993-12-30 1995-09-05 Sgs-Thomson Microelectronics, Inc. PTAT current source
US5699014A (en) 1996-04-04 1997-12-16 Cardiac Pacemakers, Inc. Linear amplifier
US6346848B1 (en) 2000-06-29 2002-02-12 International Business Machines Corporation Apparatus and method for generating current linearly dependent on temperature
JP3884365B2 (ja) * 2001-10-31 2007-02-21 株式会社東芝 移動度比例電流発生器とこれを用いたバイアス発生器および増幅器
US7505739B2 (en) 2004-11-12 2009-03-17 Atheros Technology Ltd. Automatic mode setting and power ramp compensator for system power on conditions
US7202740B2 (en) 2005-01-05 2007-04-10 Broadcom Corporation Gain boosting for tuned differential LC circuits
US7449958B1 (en) * 2005-08-17 2008-11-11 Marvell International Ltd. Open loop DC control for a transimpedance feedback amplifier
US7236048B1 (en) 2005-11-22 2007-06-26 National Semiconductor Corporation Self-regulating process-error trimmable PTAT current source
US7443241B2 (en) * 2005-11-28 2008-10-28 Via Technologies Inc. RF variable gain amplifier
US7885629B2 (en) 2006-08-03 2011-02-08 Broadcom Corporation Circuit with Q-enhancement cell having programmable bias current slope
US7522002B2 (en) * 2007-01-04 2009-04-21 Atmel Corporation Biasing current to speed up current mirror settling time
US20090054004A1 (en) 2007-08-20 2009-02-26 Zerog Wireless, Inc., Delaware Corporation Biasing for Stacked Circuit Configurations
US8098101B2 (en) 2008-07-08 2012-01-17 Qualcomm, Incorporated Method of achieving high selectivity in receiver RF front-ends
US7994847B1 (en) * 2008-11-06 2011-08-09 Marvell International Ltd. Reduced gain variation biasing for short channel devices
JP5315981B2 (ja) * 2008-12-24 2013-10-16 富士通セミコンダクター株式会社 電流生成回路、電流生成方法及び電子機器
JP5107272B2 (ja) * 2009-01-15 2012-12-26 株式会社東芝 温度補償回路

Also Published As

Publication number Publication date
JP6243048B2 (ja) 2017-12-06
KR101763233B1 (ko) 2017-07-31
JP2017503435A (ja) 2017-01-26
CN106416059B (zh) 2020-02-28
EP3095188A1 (en) 2016-11-23
KR20160108511A (ko) 2016-09-19
US20150207466A1 (en) 2015-07-23
US9401680B2 (en) 2016-07-26
EP3095188B1 (en) 2022-10-19
WO2015108755A1 (en) 2015-07-23
CN106416059A (zh) 2017-02-15

Similar Documents

Publication Publication Date Title
BR112016016538A2 (pt) Polarização de amplificador dependente da temperatura
BR112018075103A2 (pt) queda baixa compensada com razão de rejeição de fonte de alimentação alta e proteção contra curto-circuito
CU24425B1 (es) Amino-heteroaril-benzamidas como inhibidores de cinasa
PE20180267A1 (es) Composiciones que comprenden cepas bacterianas
BR112014026485A2 (pt) medições de emissão acústica de um conjunto de mancal
BR112016028619A2 (pt) sensor de temperatura de baixa potência e baixo custo
MX364468B (es) Termopar con conexión a tierra activo y método de operación.
AR111835A1 (es) Composiciones estables de inoculantes que comprenden aceites vegetales metilados
UY35510A (es) ?composiciones y métodos para mejorar la estabilidad microbiana?.
BR112015012355A2 (pt) método e dispositivo para tornar um aplicativo de gerenciamento do roteador compatível com um firmware do roteador
BR112015029148A2 (pt) dispositivo, método para pré-carregar um filtro de entrada e meio tangível legível por computador
BR112016024709A2 (pt) amplificador cascodo diferencial com terminais de porta seletivamente acoplados
ES2811835T3 (es) Procedimiento para determinar el riesgo de toxicidad por 5-fluorouracilo
EP3214759A4 (en) Ultra-low working voltage rail to rail operational amplifier and differential input amplification-stage circuit and output-stage circuit thereof
MX2016002460A (es) Determinacion del punto de funcionamiento de etapa amplificadora.
BR112017007780A2 (pt) ?mancal deslizante feito de resina sintética?
BR112018000327A2 (pt) aparelho e método para medir a corrente de carga mediante aplicação de ganho compensado à voltagem derivada da voltagem de dreno/fonte do dispositivo de passagem de energia
TW201613261A (en) A differential two-stage amplifier and operation method thereof
MX2016016169A (es) Medicion basada en frecuencia de caracteristicas de una sustancia.
MX357196B (es) Dispositivo informatico optico y metodo para compensar las fluctuaciones de luz.
CL2016003351A1 (es) Lipido que comprende ácido docosapentanoico
BR112017001622A2 (pt) circuito de gerenciamento de dispersão passivo para uma corrente de dispersão de interruptor
PL409432A1 (pl) Wentylator osiowy
UY4702S (es) Diseño ornamental de aparato par indicar visualmente el nivel sonoro ambiental
TR201710472A1 (tr) Fotovoltaik Sistem İle Transformatörün Soğutulması

Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 5A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2548 DE 05-11-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.