BR112017024998A2 - dispositivo de conversão de potência - Google Patents

dispositivo de conversão de potência

Info

Publication number
BR112017024998A2
BR112017024998A2 BR112017024998-7A BR112017024998A BR112017024998A2 BR 112017024998 A2 BR112017024998 A2 BR 112017024998A2 BR 112017024998 A BR112017024998 A BR 112017024998A BR 112017024998 A2 BR112017024998 A2 BR 112017024998A2
Authority
BR
Brazil
Prior art keywords
semiconductor elements
door
power conversion
conversion device
magnetic flux
Prior art date
Application number
BR112017024998-7A
Other languages
English (en)
Japanese (ja)
Other versions
BR112017024998B1 (pt
Inventor
Zushi Yusuke
Suzuki Tatsuhiro
Numakura Keiichiro
Shimomura Taku
Hayashi Tetsuya
Original Assignee
Nissan Motor Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co., Ltd. filed Critical Nissan Motor Co., Ltd.
Publication of BR112017024998A2 publication Critical patent/BR112017024998A2/pt
Publication of BR112017024998B1 publication Critical patent/BR112017024998B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/40—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc
    • H02M5/42—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters
    • H02M5/44—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac
    • H02M5/453—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M5/458—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M5/4585—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only having a rectifier with controlled elements
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0003—Details of control, feedback or regulation circuits
    • H02M1/0006—Arrangements for supplying an adequate voltage to the control circuit of converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)

Abstract

trata-se de um dispositivo de conversão de potência que inclui uma unidade de ajuste de tensão de porta (um circuito de detecção 12) que atua em um sinal de acionamento de um circuito de acionamento de porta 11 que envia um sinal de acionamento para as respectivas portas de uma pluralidade de elementos semicondutores q1 a q2 fornecidos em paralelo, e que ajusta a tensões de porta dos elementos semicondutores. a unidade de ajuste de tensão de porta sobrepõe uma tensão de indução gerada com base em uma diferença entre um fluxo magnético devido a uma corrente que flui através de um dentre a pluralidade de elementos semicondutores e um fluxo magnético devido a uma corrente que flui através de cada um dentre os outros elementos semicondutores, sobre uma tensão de porta enviada para pelo menos uma porta da pluralidade de elementos semicondutores.
BR112017024998-7A 2015-05-22 2015-05-22 Dispositivo de conversão de potência BR112017024998B1 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2015/064743 WO2016189585A1 (ja) 2015-05-22 2015-05-22 電力変換装置

Publications (2)

Publication Number Publication Date
BR112017024998A2 true BR112017024998A2 (pt) 2018-07-31
BR112017024998B1 BR112017024998B1 (pt) 2022-06-28

Family

ID=57392968

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112017024998-7A BR112017024998B1 (pt) 2015-05-22 2015-05-22 Dispositivo de conversão de potência

Country Status (10)

Country Link
US (1) US10230294B2 (pt)
EP (1) EP3300234B1 (pt)
JP (1) JP6460231B2 (pt)
KR (1) KR101992559B1 (pt)
CN (1) CN107710575B (pt)
BR (1) BR112017024998B1 (pt)
CA (1) CA2986883C (pt)
MX (1) MX360753B (pt)
RU (1) RU2663827C1 (pt)
WO (1) WO2016189585A1 (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9503079B1 (en) * 2015-05-28 2016-11-22 Toyota Motor Engineering & Manufacturing North America, Inc. Method and apparatus for current/power balancing
US10973112B2 (en) * 2017-07-18 2021-04-06 Hitachi High-Tech Corporation Charged particle beam device
DE102017117566B4 (de) * 2017-08-02 2022-07-21 Technische Universität Dortmund Vorrichtung und Verfahren zur homogenen Stromverteilung und/oder zur Reduzierung von Schaltverlusten von elektrisch steuerbaren Schaltelementen
JP2020167612A (ja) * 2019-03-29 2020-10-08 住友電装株式会社 給電制御装置
CN111181363B (zh) * 2019-07-01 2020-10-16 苏州纳芯微电子股份有限公司 一种隔离电源电路及其控制方法
JP7528456B2 (ja) * 2020-02-04 2024-08-06 オムロン株式会社 半導体回路
WO2023157185A1 (ja) * 2022-02-17 2023-08-24 三菱電機株式会社 ゲート駆動回路及び電力変換装置

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JPS4878432A (pt) * 1972-01-29 1973-10-22
US3737756A (en) * 1972-05-15 1973-06-05 Bell Telephone Labor Inc Converter circuit with balanced parallel switching paths
AT349104B (de) * 1974-12-27 1979-03-26 Siemens Ag Oesterreich Schaltungsanordnung mit parallelgeschalteten und durch eine gemeinsame steuerspannung gesteuerten transistoren
JPS5453954A (en) * 1977-10-07 1979-04-27 Fuji Electric Co Ltd Parallel connection mthod of transistor
SU1083306A1 (ru) * 1981-07-16 1984-03-30 Предприятие П/Я Г-4514 Устройство дл равномерного токораспределени при параллельном включении транзисторов,работающих в импульсном режиме с насыщением
SU1304007A1 (ru) * 1985-11-05 1987-04-15 Предприятие П/Я Г-4173 Устройство дл автоматического выравнивани эмиттерных токов параллельно включенных транзисторов
JPH07177727A (ja) * 1993-12-22 1995-07-14 Toshiba Corp 電圧駆動型スイッチング素子のゲート駆動回路および電圧駆動型スイッチング素子のゲート駆動方法
JPH0819246A (ja) * 1994-07-04 1996-01-19 Fuji Electric Co Ltd 半導体スイッチ素子の並列接続回路
JP3421544B2 (ja) 1997-07-14 2003-06-30 株式会社東芝 半導体モジュール
JP2003244966A (ja) * 2002-02-18 2003-08-29 Mitsubishi Electric Corp 駆動回路
JP4082672B2 (ja) 2003-03-06 2008-04-30 株式会社デンソー 電気絶縁型スイッチング素子駆動回路
JP2005005595A (ja) * 2003-06-13 2005-01-06 Murata Mfg Co Ltd コイル部品
JP2006049341A (ja) * 2004-07-30 2006-02-16 Renesas Technology Corp 半導体装置およびその製造方法
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JP5954924B2 (ja) * 2010-08-09 2016-07-20 富士電機株式会社 電力変換装置
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JP5850901B2 (ja) * 2013-11-08 2016-02-03 三菱電機株式会社 車載用電力変換装置

Also Published As

Publication number Publication date
EP3300234A4 (en) 2018-08-15
US20180152093A1 (en) 2018-05-31
MX2017014684A (es) 2018-01-24
RU2663827C1 (ru) 2018-08-10
CN107710575A (zh) 2018-02-16
BR112017024998B1 (pt) 2022-06-28
JP6460231B2 (ja) 2019-01-30
EP3300234B1 (en) 2019-08-21
CA2986883A1 (en) 2016-12-01
WO2016189585A1 (ja) 2016-12-01
EP3300234A1 (en) 2018-03-28
CA2986883C (en) 2019-03-26
JPWO2016189585A1 (ja) 2018-04-05
KR20180002736A (ko) 2018-01-08
KR101992559B1 (ko) 2019-06-24
US10230294B2 (en) 2019-03-12
CN107710575B (zh) 2019-01-01
MX360753B (es) 2018-11-15

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B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 22/05/2015, OBSERVADAS AS CONDICOES LEGAIS