BR112013025260B8 - Óxido do tipo p, composição para produção de óxido do tipo p, método para produzir óxido do tipo p, dispositivo semicondutor, dispositivo de exibição, aparelho de exibição de imagem, e sistema - Google Patents
Óxido do tipo p, composição para produção de óxido do tipo p, método para produzir óxido do tipo p, dispositivo semicondutor, dispositivo de exibição, aparelho de exibição de imagem, e sistemaInfo
- Publication number
- BR112013025260B8 BR112013025260B8 BR112013025260A BR112013025260A BR112013025260B8 BR 112013025260 B8 BR112013025260 B8 BR 112013025260B8 BR 112013025260 A BR112013025260 A BR 112013025260A BR 112013025260 A BR112013025260 A BR 112013025260A BR 112013025260 B8 BR112013025260 B8 BR 112013025260B8
- Authority
- BR
- Brazil
- Prior art keywords
- type oxide
- oxide production
- semiconductor device
- image display
- display apparatus
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000000203 mixture Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000014509 gene expression Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
- H01L29/242—AIBVI or AIBVII compounds, e.g. Cu2O, Cu I
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F11/00—Compounds of calcium, strontium, or barium
- C01F11/02—Oxides or hydroxides
- C01F11/04—Oxides or hydroxides by thermal decomposition
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F5/00—Compounds of magnesium
- C01F5/02—Magnesia
- C01F5/06—Magnesia by thermal decomposition of magnesium compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G3/00—Compounds of copper
- C01G3/02—Oxides; Hydroxides
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/02—Amorphous compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Thermal Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Devices (AREA)
Abstract
óxido do tipo p, composição para produção de óxido do tipo p, método para produzir óxido do tipo p, dispositivo semicondutor, dispositivo de exibição, aparelho de exibição de imagem, e sistema. um óxido do tipo p que é amorfo e é representado pela seguinte fórmula de composição: xaoycu2o onde x denota uma proporção por mol de ao e y denotam uma proporção por mol de cu2o e x e y satisfazem as seguintes expressões: 0 (menor igual) x < 100 e x + y = 100, e a é qualquer um de mg, ca, sr e ba, ou uma mistura que contém pelo menos um selecionado a partir do grupo que consiste de mg, ca, sr e ba.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011080171 | 2011-03-31 | ||
JP2011-080171 | 2011-03-31 | ||
JP2012045666A JP2012216780A (ja) | 2011-03-31 | 2012-03-01 | p型酸化物、p型酸化物製造用組成物、p型酸化物の製造方法、半導体素子、表示素子、画像表示装置、及びシステム |
JP2012-045666 | 2012-03-01 | ||
PCT/JP2012/059131 WO2012133915A1 (en) | 2011-03-31 | 2012-03-28 | P-type oxide, p-type oxide-producing composition, method for producing p-type oxide, semiconductor device, display device, image display apparatus, and system |
Publications (3)
Publication Number | Publication Date |
---|---|
BR112013025260A2 BR112013025260A2 (pt) | 2016-12-13 |
BR112013025260B1 BR112013025260B1 (pt) | 2021-07-06 |
BR112013025260B8 true BR112013025260B8 (pt) | 2022-01-25 |
Family
ID=46931599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112013025260A BR112013025260B8 (pt) | 2011-03-31 | 2012-03-28 | Óxido do tipo p, composição para produção de óxido do tipo p, método para produzir óxido do tipo p, dispositivo semicondutor, dispositivo de exibição, aparelho de exibição de imagem, e sistema |
Country Status (10)
Country | Link |
---|---|
US (3) | US9761673B2 (pt) |
EP (1) | EP2691984B1 (pt) |
JP (1) | JP2012216780A (pt) |
KR (3) | KR102045364B1 (pt) |
CN (1) | CN103460389B (pt) |
BR (1) | BR112013025260B8 (pt) |
RU (1) | RU2556102C2 (pt) |
SG (1) | SG193994A1 (pt) |
TW (1) | TWI474977B (pt) |
WO (1) | WO2012133915A1 (pt) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI703723B (zh) * | 2012-11-28 | 2020-09-01 | 日商半導體能源研究所股份有限公司 | 顯示裝置 |
JP6015389B2 (ja) * | 2012-11-30 | 2016-10-26 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
DE102013100593B4 (de) * | 2013-01-21 | 2014-12-31 | Wavelabs Solar Metrology Systems Gmbh | Verfahren und Vorrichtung zum Vermessen von Solarzellen |
TWI506773B (zh) * | 2013-03-29 | 2015-11-01 | Ye Xin Technology Consulting Co Ltd | 有機電致發光式觸控顯示面板 |
JP6264090B2 (ja) * | 2013-07-31 | 2018-01-24 | 株式会社リコー | 電界効果型トランジスタ、及び電界効果型トランジスタの製造方法 |
JP6394171B2 (ja) * | 2013-10-30 | 2018-09-26 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
JP6651714B2 (ja) * | 2014-07-11 | 2020-02-19 | 株式会社リコー | n型酸化物半導体製造用塗布液、電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
CN104993066B (zh) * | 2015-05-27 | 2017-11-14 | 京东方科技集团股份有限公司 | 一种oled器件及其制备方法、显示装置 |
EP3125296B1 (en) * | 2015-07-30 | 2020-06-10 | Ricoh Company, Ltd. | Field-effect transistor, display element, image display device, and system |
TWI566417B (zh) * | 2015-12-04 | 2017-01-11 | 財團法人工業技術研究院 | p型金屬氧化物半導體材料與電晶體 |
US9633924B1 (en) | 2015-12-16 | 2017-04-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and method for forming the same |
JP6662038B2 (ja) * | 2015-12-28 | 2020-03-11 | 株式会社リコー | 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム |
JP6665536B2 (ja) | 2016-01-12 | 2020-03-13 | 株式会社リコー | 酸化物半導体 |
JP6701835B2 (ja) | 2016-03-11 | 2020-05-27 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
CN110249432A (zh) * | 2017-02-14 | 2019-09-17 | 三菱电机株式会社 | 电力用半导体装置 |
JP2018157206A (ja) * | 2017-03-17 | 2018-10-04 | 株式会社リコー | 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム |
US11315961B2 (en) | 2017-03-17 | 2022-04-26 | Ricoh Company, Ltd. | Field-effect transistor, method for producing same, display element, display device, and system |
CN107623044A (zh) * | 2017-09-08 | 2018-01-23 | 河南大学 | 一种透明柔性异质pn结二极管及其制备方法 |
LU100461B1 (en) * | 2017-09-27 | 2019-03-29 | Luxembourg Inst Science & Tech List | Field-effect transistor with a total control of the electrical conductivity on its channel |
JP6451875B2 (ja) * | 2018-01-04 | 2019-01-16 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
EP3748697A4 (en) | 2018-01-29 | 2021-09-29 | Kabushiki Kaisha Toshiba | SOLAR CELL, MULTI-JUNCTION SOLAR CELL, SOLAR CELL MODULE AND SOLAR ENERGY SYSTEM |
WO2019181686A1 (en) | 2018-03-19 | 2019-09-26 | Ricoh Company, Ltd. | Inorganic el element, display element, image display device, and system |
CN109148593B (zh) * | 2018-07-16 | 2020-09-01 | 复旦大学 | 一种三元p型CuBi2O4薄膜晶体管及其制备方法 |
US11322627B2 (en) | 2018-09-19 | 2022-05-03 | Kabushiki Kaisha Toshiba | Solar cell, multi-junction solar cell, solar cell module, and solar power generation system |
JP6787386B2 (ja) * | 2018-12-12 | 2020-11-18 | 株式会社リコー | 絶縁膜形成用塗布液 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5232900A (en) * | 1988-06-09 | 1993-08-03 | Superconductor Development Corporation | Superconductor structure |
JP3850978B2 (ja) | 1998-03-31 | 2006-11-29 | 独立行政法人科学技術振興機構 | 導電性透明酸化物 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP2000150166A (ja) * | 1998-11-16 | 2000-05-30 | Tdk Corp | 有機el素子 |
JP2000228516A (ja) * | 1999-02-08 | 2000-08-15 | Tdk Corp | 半導体積層薄膜、電子デバイスおよびダイオード |
JP2000227769A (ja) | 1999-02-08 | 2000-08-15 | Tdk Corp | マトリックス表示装置 |
JP2001007365A (ja) | 1999-06-22 | 2001-01-12 | Tdk Corp | 太陽電池 |
JP3398638B2 (ja) | 2000-01-28 | 2003-04-21 | 科学技術振興事業団 | 発光ダイオードおよび半導体レーザーとそれらの製造方法 |
US7901656B2 (en) | 2003-03-21 | 2011-03-08 | Wayne State University | Metal oxide-containing nanoparticles |
US7026713B2 (en) * | 2003-12-17 | 2006-04-11 | Hewlett-Packard Development Company, L.P. | Transistor device having a delafossite material |
JP2007042771A (ja) | 2005-08-02 | 2007-02-15 | Kyoto Univ | p型ワイドギャップ半導体 |
US20070054042A1 (en) * | 2005-09-06 | 2007-03-08 | Sharp Laboratories Of America, Inc. | Method of SrCu2O2 spin-on precursor synthesis and low temperature p-type thin film deposition |
US7087526B1 (en) | 2005-10-27 | 2006-08-08 | Sharp Laboratories Of America, Inc. | Method of fabricating a p-type CaO-doped SrCu2O2 thin film |
US7329915B2 (en) * | 2005-11-21 | 2008-02-12 | Hewlett-Packard Development Company, L.P. | Rectifying contact to an n-type oxide material or a substantially insulating oxide material |
JP2007157982A (ja) * | 2005-12-05 | 2007-06-21 | Seiko Epson Corp | トランジスタ型強誘電体メモリおよびその製造方法 |
JP5205763B2 (ja) | 2006-09-19 | 2013-06-05 | 株式会社リコー | 有機薄膜トランジスタ |
US20100219405A1 (en) | 2007-09-13 | 2010-09-02 | Toshiya Sagisaka | Novel arylamine polymer, method for producing the same, ink composition, film, electronic device, organic thin-film transistor, and display device |
TW201002722A (en) | 2008-01-22 | 2010-01-16 | Ricoh Co Ltd | Benzobisthiazole compound, benzobisthiazole polymer, organic film including the compound or polymer and transistor including the organic film |
JP5200596B2 (ja) * | 2008-03-14 | 2013-06-05 | Tdk株式会社 | 発光素子 |
JP5487655B2 (ja) | 2008-04-17 | 2014-05-07 | 株式会社リコー | [1]ベンゾチエノ[3,2‐b][1]ベンゾチオフェン化合物およびその製造方法、それを用いた有機電子デバイス |
JP5644071B2 (ja) | 2008-08-20 | 2014-12-24 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置及びシステム |
KR20100130419A (ko) * | 2009-06-03 | 2010-12-13 | 삼성전자주식회사 | 이종접합 다이오드와 그 제조방법 및 이종접합 다이오드를 포함하는 전자소자 |
US20110215306A1 (en) | 2010-03-02 | 2011-09-08 | Takuji Kato | Organic semiconductor element and organic electrode |
-
2012
- 2012-03-01 JP JP2012045666A patent/JP2012216780A/ja active Pending
- 2012-03-28 KR KR1020187009023A patent/KR102045364B1/ko active IP Right Grant
- 2012-03-28 RU RU2013148552/05A patent/RU2556102C2/ru active
- 2012-03-28 SG SG2013072913A patent/SG193994A1/en unknown
- 2012-03-28 WO PCT/JP2012/059131 patent/WO2012133915A1/en active Application Filing
- 2012-03-28 KR KR1020137028184A patent/KR20130137226A/ko active Search and Examination
- 2012-03-28 US US14/007,705 patent/US9761673B2/en active Active
- 2012-03-28 BR BR112013025260A patent/BR112013025260B8/pt active IP Right Grant
- 2012-03-28 KR KR1020157017368A patent/KR20150085097A/ko not_active Application Discontinuation
- 2012-03-28 CN CN201280016806.9A patent/CN103460389B/zh not_active Expired - Fee Related
- 2012-03-28 EP EP12764443.3A patent/EP2691984B1/en active Active
- 2012-03-29 TW TW101111134A patent/TWI474977B/zh not_active IP Right Cessation
-
2017
- 2017-08-14 US US15/676,161 patent/US10236349B2/en not_active Expired - Fee Related
-
2019
- 2019-01-28 US US16/258,814 patent/US10923569B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2691984A4 (en) | 2014-09-03 |
US10236349B2 (en) | 2019-03-19 |
US10923569B2 (en) | 2021-02-16 |
RU2013148552A (ru) | 2015-05-10 |
EP2691984B1 (en) | 2019-09-04 |
CN103460389A (zh) | 2013-12-18 |
TW201249748A (en) | 2012-12-16 |
JP2012216780A (ja) | 2012-11-08 |
RU2556102C2 (ru) | 2015-07-10 |
TWI474977B (zh) | 2015-03-01 |
CN103460389B (zh) | 2017-08-11 |
US9761673B2 (en) | 2017-09-12 |
US20170345901A1 (en) | 2017-11-30 |
KR102045364B1 (ko) | 2019-11-15 |
KR20150085097A (ko) | 2015-07-22 |
US20190172914A1 (en) | 2019-06-06 |
KR20180037302A (ko) | 2018-04-11 |
US20140009514A1 (en) | 2014-01-09 |
BR112013025260A2 (pt) | 2016-12-13 |
EP2691984A1 (en) | 2014-02-05 |
BR112013025260B1 (pt) | 2021-07-06 |
KR20130137226A (ko) | 2013-12-16 |
SG193994A1 (en) | 2013-11-29 |
WO2012133915A1 (en) | 2012-10-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BR112013025260B8 (pt) | Óxido do tipo p, composição para produção de óxido do tipo p, método para produzir óxido do tipo p, dispositivo semicondutor, dispositivo de exibição, aparelho de exibição de imagem, e sistema | |
RS54031B1 (en) | IMPROVED METHOD FOR SYNTHESIS OF PIRFENIDONE | |
PE20141358A1 (es) | Polimorfos de inhibidores de cinasas | |
IN2014MN02106A (pt) | ||
NZ729037A (en) | Carboxylic acid compound, method for preparation thereof, and use thereof | |
PH12015500008B1 (en) | Dimethyl-benzoic acid compounds | |
EP1813584A3 (en) | New metabolic and nutritional activator for plants | |
WO2011092325A3 (en) | Composition for the prevention or removal of insoluble salt deposits | |
EA201690072A1 (ru) | Состав, содержащий гиполипидемическое средство | |
WO2013042973A3 (ko) | I-선 포토레지스트 조성물 및 이를 이용한 미세패턴 형성 방법 | |
NZ701832A (en) | Compositions and methods for treatment of inflammatory bowel disease | |
WO2013152277A3 (en) | Moenomycin analogs, methods of synthesis, and uses thereof | |
PE20080175A1 (es) | Sales de malato, y polimorfos de acido (3s,5s)-7-[3-amino-5-metil-piperidinil]-1-ciclopropil-1,4-dihidro-8-metoxi-4-oxo-3-quinolincarboxilico | |
EA201291014A1 (ru) | Трициклическое индазольное соединение, способ его получения и содержащая его фармацевтическая композиция | |
BR112015000988A2 (pt) | método para a síntese de ácido n-fosfonometiliminodiacético ou derivados do mesmo | |
NZ702736A (en) | Processes and reagents for making diaryliodonium salts | |
BRPI0814115B8 (pt) | composição farmacêutica compreendendo o composto 11-deóxi-prostaglandina e método para estabilizar o composto | |
TN2014000329A1 (en) | Method for preparing compound by novel michael addition reaction using water or various acids as additive | |
BR112012021673A2 (pt) | composição de controle de doença de planta e método para controlar doença de planta. | |
MX2016005231A (es) | Una forma cristalina anhidra de cabazitaxel, procedimiento para la preparacion y composiciones farmaceuticas del mismo. | |
MX2015016665A (es) | Composicion dispersante liquida para yeso. | |
UA116994C2 (uk) | Стабілізована аморфна форма агомелатину, спосіб її одержання і фармацевтичні композиції, які її містять | |
BR112021026100A2 (pt) | Retardador de chama de polímero e método para sua fabricação | |
MX2017004815A (es) | Metodo para la polimeracion de acido (met)acrilico en solucion. | |
BR112017003121A2 (pt) | método para a síntese de um óxido de fosfina de hidrogênio heterocíclico |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
B06U | Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette] | ||
B06A | Patent application procedure suspended [chapter 6.1 patent gazette] | ||
B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 28/03/2012, OBSERVADAS AS CONDICOES LEGAIS. |
|
B16C | Correction of notification of the grant [chapter 16.3 patent gazette] |
Free format text: REF. RPI 2635 DE 06/07/2021 QUANTO AO INVENTOR. |