BR112013021668A2 - liga de solda para dispositivos de energia e junta de solda tendo uma alta densidade de corrente - Google Patents

liga de solda para dispositivos de energia e junta de solda tendo uma alta densidade de corrente

Info

Publication number
BR112013021668A2
BR112013021668A2 BR112013021668A BR112013021668A BR112013021668A2 BR 112013021668 A2 BR112013021668 A2 BR 112013021668A2 BR 112013021668 A BR112013021668 A BR 112013021668A BR 112013021668 A BR112013021668 A BR 112013021668A BR 112013021668 A2 BR112013021668 A2 BR 112013021668A2
Authority
BR
Brazil
Prior art keywords
welding
current density
high current
power devices
joint
Prior art date
Application number
BR112013021668A
Other languages
English (en)
Other versions
BR112013021668B1 (pt
Inventor
Hans-Jürgen Albrecht
Katsuaki Suganuma
Klaus Wilke
Minoru Ueshima
Original Assignee
Senju Metal Industry Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Senju Metal Industry Co filed Critical Senju Metal Industry Co
Publication of BR112013021668A2 publication Critical patent/BR112013021668A2/pt
Publication of BR112013021668B1 publication Critical patent/BR112013021668B1/pt

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0263—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board

Abstract

liga de solda para dispositivos de energia e junta de solda tendo uma alta densidade de corrente a presente invenção refere-se a uma junta de solda que é usada em dispositivos de energia e similares, e que pode suportar uma alta densidade de corrente sem desenvolver eletromigração é is formada de uma liga à base de sn-ag-bi-in. a junta de solda é formada de uma liga de solda consistindo essencialmente de 2 - 4% em massa de ag, 2 - 4% em massa de bi, 2 - 5% em massa de in, e um restante de sn. a liga de solda pode adicionalmente conter pelo menos um de ni, co, e fe.
BR112013021668-9A 2011-02-25 2012-02-27 Liga de solda para um dispositivo eletrônico, junta de solda e dispositivo de energia BR112013021668B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011057183 2011-02-25
JP2011-057183 2011-02-25
PCT/JP2012/054774 WO2012115268A1 (ja) 2011-02-25 2012-02-27 パワーデバイス用のはんだ合金と高電流密度のはんだ継手

Publications (2)

Publication Number Publication Date
BR112013021668A2 true BR112013021668A2 (pt) 2016-11-01
BR112013021668B1 BR112013021668B1 (pt) 2019-04-02

Family

ID=46721035

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112013021668-9A BR112013021668B1 (pt) 2011-02-25 2012-02-27 Liga de solda para um dispositivo eletrônico, junta de solda e dispositivo de energia

Country Status (10)

Country Link
US (2) US20140112710A1 (pt)
EP (1) EP2679334B1 (pt)
JP (1) JP5418718B2 (pt)
KR (3) KR101773733B1 (pt)
CN (1) CN103501959B (pt)
BR (1) BR112013021668B1 (pt)
ES (1) ES2799421T3 (pt)
MY (1) MY157295A (pt)
TW (1) TWI565550B (pt)
WO (1) WO2012115268A1 (pt)

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JP5590272B1 (ja) * 2012-12-18 2014-09-17 千住金属工業株式会社 鉛フリーはんだ合金
WO2014129258A1 (ja) * 2013-02-25 2014-08-28 ソニー株式会社 半田組成物、電気接続構造、電気接続部材、プリント配線板および電子回路装置
KR101551613B1 (ko) * 2014-06-24 2015-09-08 하리마카세이 가부시기가이샤 땜납 합금, 땜납 조성물, 솔더 페이스트 및 전자 회로 기판
JP2016103530A (ja) * 2014-11-27 2016-06-02 新日鉄住金マテリアルズ株式会社 無鉛はんだバンプ接合構造
WO2017134974A1 (ja) * 2016-02-01 2017-08-10 株式会社村田製作所 接合材、それを用いた接合方法及び接合構造
JP6365653B2 (ja) * 2016-08-19 2018-08-01 千住金属工業株式会社 はんだ合金、はんだ継手およびはんだ付け方法
JP2018140427A (ja) * 2017-02-28 2018-09-13 千住金属工業株式会社 はんだ材料、はんだペースト、フォームはんだ及びはんだ継手
JP6810375B1 (ja) 2019-05-27 2021-01-06 千住金属工業株式会社 はんだ合金、ソルダペースト、はんだボール、ソルダプリフォーム、はんだ継手、車載電子回路、ｅｃｕ電子回路、車載電子回路装置、およびｅｃｕ電子回路装置
JP6708942B1 (ja) * 2019-05-27 2020-06-10 千住金属工業株式会社 はんだ合金、はんだペースト、プリフォームはんだ、はんだボール、線はんだ、脂入りはんだ、はんだ継手、電子回路基板および多層電子回路基板
CN112317972B (zh) * 2020-09-30 2021-07-20 厦门大学 一种单向性耐高温焊接接头的低温快速制造方法
JP7481285B2 (ja) 2021-03-23 2024-05-10 株式会社デンソー 半導体装置およびその製造方法
KR102394475B1 (ko) 2021-09-14 2022-05-04 마이크로컴퍼지트 주식회사 저융점 고신뢰성 솔더 입자, 이를 포함하는 수지 조성물
JP2024035598A (ja) * 2022-09-02 2024-03-14 株式会社デンソー 半導体装置

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Also Published As

Publication number Publication date
KR101773733B1 (ko) 2017-08-31
TWI565550B (zh) 2017-01-11
BR112013021668B1 (pt) 2019-04-02
KR20160101209A (ko) 2016-08-24
CN103501959A (zh) 2014-01-08
EP2679334A4 (en) 2016-06-01
US20140112710A1 (en) 2014-04-24
WO2012115268A1 (ja) 2012-08-30
US11331759B2 (en) 2022-05-17
KR20160086964A (ko) 2016-07-20
CN103501959B (zh) 2016-03-16
TW201302366A (zh) 2013-01-16
JP5418718B2 (ja) 2014-02-19
JPWO2012115268A1 (ja) 2014-07-07
ES2799421T3 (es) 2020-12-17
MY157295A (en) 2016-05-20
EP2679334B1 (en) 2020-05-27
EP2679334A1 (en) 2014-01-01
US20210008670A1 (en) 2021-01-14
KR20130118993A (ko) 2013-10-30
KR101752616B1 (ko) 2017-06-29

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B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 27/02/2012, OBSERVADAS AS CONDICOES LEGAIS. (CO) 20 (VINTE) ANOS CONTADOS A PARTIR DE 27/02/2012, OBSERVADAS AS CONDICOES LEGAIS