BR112013013615A2 - matrizes de baixa condutividade térmica com nanoestruturas incorporadas e seus métodos - Google Patents

matrizes de baixa condutividade térmica com nanoestruturas incorporadas e seus métodos

Info

Publication number
BR112013013615A2
BR112013013615A2 BR112013013615A BR112013013615A BR112013013615A2 BR 112013013615 A2 BR112013013615 A2 BR 112013013615A2 BR 112013013615 A BR112013013615 A BR 112013013615A BR 112013013615 A BR112013013615 A BR 112013013615A BR 112013013615 A2 BR112013013615 A2 BR 112013013615A2
Authority
BR
Brazil
Prior art keywords
methods
thermal conductivity
low thermal
embedded nanostructures
conductivity matrices
Prior art date
Application number
BR112013013615A
Other languages
English (en)
Inventor
Chii Guang Lee
Gabriel A Matus
Matthew L Scullin
Mingqiang Yi
Sylvain Muckenhirn
Original Assignee
Alphabet Energy Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alphabet Energy Inc filed Critical Alphabet Energy Inc
Publication of BR112013013615A2 publication Critical patent/BR112013013615A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Silicon Compounds (AREA)
BR112013013615A 2010-12-03 2011-12-02 matrizes de baixa condutividade térmica com nanoestruturas incorporadas e seus métodos BR112013013615A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41936610P 2010-12-03 2010-12-03
PCT/US2011/063000 WO2012075359A1 (en) 2010-12-03 2011-12-02 Low thermal conductivity matrices with embedded nanostructures and methods thereof

Publications (1)

Publication Number Publication Date
BR112013013615A2 true BR112013013615A2 (pt) 2016-09-06

Family

ID=46172281

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112013013615A BR112013013615A2 (pt) 2010-12-03 2011-12-02 matrizes de baixa condutividade térmica com nanoestruturas incorporadas e seus métodos

Country Status (8)

Country Link
US (2) US8736011B2 (pt)
EP (1) EP2647064A4 (pt)
JP (1) JP2014505998A (pt)
KR (1) KR20140005914A (pt)
CN (1) CN103339752B (pt)
BR (1) BR112013013615A2 (pt)
CA (1) CA2819638A1 (pt)
WO (1) WO2012075359A1 (pt)

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US20120319082A1 (en) 2012-12-20
US20140193982A1 (en) 2014-07-10
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US8736011B2 (en) 2014-05-27
KR20140005914A (ko) 2014-01-15
EP2647064A1 (en) 2013-10-09
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