BE863591A - Dispositif semiconducteur de memoire - Google Patents

Dispositif semiconducteur de memoire

Info

Publication number
BE863591A
BE863591A BE184857A BE184857A BE863591A BE 863591 A BE863591 A BE 863591A BE 184857 A BE184857 A BE 184857A BE 184857 A BE184857 A BE 184857A BE 863591 A BE863591 A BE 863591A
Authority
BE
Belgium
Prior art keywords
semiconductor device
memory semiconductor
memory
semiconductor
Prior art date
Application number
BE184857A
Other languages
English (en)
French (fr)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of BE863591A publication Critical patent/BE863591A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
BE184857A 1977-02-04 1978-02-02 Dispositif semiconducteur de memoire BE863591A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7701172A NL7701172A (nl) 1977-02-04 1977-02-04 Halfgeleidergeheugeninrichting.

Publications (1)

Publication Number Publication Date
BE863591A true BE863591A (fr) 1978-08-02

Family

ID=19827917

Family Applications (1)

Application Number Title Priority Date Filing Date
BE184857A BE863591A (fr) 1977-02-04 1978-02-02 Dispositif semiconducteur de memoire

Country Status (14)

Country Link
US (1) US4161741A (ja)
JP (1) JPS5846064B2 (ja)
AU (1) AU512104B2 (ja)
BE (1) BE863591A (ja)
BR (1) BR7800627A (ja)
DD (1) DD137161A5 (ja)
DE (1) DE2804412C3 (ja)
ES (1) ES466564A1 (ja)
FR (1) FR2379877B1 (ja)
GB (1) GB1594562A (ja)
IT (1) IT1092499B (ja)
NL (1) NL7701172A (ja)
RO (1) RO76120A (ja)
SE (1) SE7801169L (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL191683C (nl) * 1977-02-21 1996-02-05 Zaidan Hojin Handotai Kenkyu Halfgeleidergeheugenschakeling.
WO1979000474A1 (en) * 1978-01-03 1979-07-26 D Erb A stratified charge memory device
JPS6037620B2 (ja) * 1979-12-11 1985-08-27 株式会社東芝 半導体記憶装置
US4335450A (en) * 1980-01-30 1982-06-15 International Business Machines Corporation Non-destructive read out field effect transistor memory cell system
CA1164562A (en) * 1980-10-08 1984-03-27 Manabu Itsumi Semiconductor memory device
US4593453A (en) * 1982-06-01 1986-06-10 Rockwell International Corporation Two-level transistor structures and method utilizing minimal area therefor
US4609429A (en) * 1984-07-02 1986-09-02 International Business Machines Corporation Process for making a small dynamic memory cell structure
US4753897A (en) * 1986-03-14 1988-06-28 Motorola Inc. Method for providing contact separation in silicided devices using false gate
US4908688A (en) * 1986-03-14 1990-03-13 Motorola, Inc. Means and method for providing contact separation in silicided devices
GB9115699D0 (en) * 1991-07-19 1991-09-04 Philips Electronic Associated An overvoltage protected semiconductor switch
US7729149B2 (en) * 2007-05-01 2010-06-01 Suvolta, Inc. Content addressable memory cell including a junction field effect transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075045A (en) * 1976-02-09 1978-02-21 International Business Machines Corporation Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps
US4063274A (en) * 1976-12-10 1977-12-13 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors

Also Published As

Publication number Publication date
RO76120A (ro) 1983-06-01
RO76120B (ro) 1983-05-30
IT1092499B (it) 1985-07-12
US4161741A (en) 1979-07-17
DE2804412C3 (de) 1982-03-18
GB1594562A (en) 1981-07-30
FR2379877B1 (fr) 1986-02-14
DE2804412B2 (de) 1981-06-19
NL7701172A (nl) 1978-08-08
BR7800627A (pt) 1978-10-10
DE2804412A1 (de) 1978-08-10
DD137161A5 (de) 1979-08-15
ES466564A1 (es) 1979-01-16
IT7819890A0 (it) 1978-02-01
AU3294578A (en) 1979-08-09
FR2379877A1 (fr) 1978-09-01
SE7801169L (sv) 1978-08-05
JPS5397384A (en) 1978-08-25
AU512104B2 (en) 1980-09-25
JPS5846064B2 (ja) 1983-10-14

Similar Documents

Publication Publication Date Title
SE7805554L (sv) Minnesanordning
FR2350110A1 (fr) Dispositif de catheterisme
BE871083A (fr) Dispositif electronique
BE872107A (fr) Dispositif prehenseur
NL191914C (nl) Halfgeleiderinrichting.
SE7803106L (sv) Halvledaranordning
IT7819600A0 (it) Dispositivo semiconduttore.
NL7805471A (nl) Logische halfgeleiderinrichting.
NL7806294A (nl) Geintegreerde halfgeleider -geheugeninrichting.
SE7810315L (sv) Halvledaranordning
BE838420A (fr) Dispositif de memoire
FR2379877B1 (fr) Dispositif semi-conducteur de memoire
BE863929A (fr) Dispositif semi-conducteur
IT7831321A0 (it) Dispositivo semiconduttore.
NL7810677A (nl) Geintegreerde halfgeleiderinrichting.
FR2341204A1 (fr) Dispositif semi-conducteur
NL181612C (nl) Halfgeleiderinrichting.
FR2319953A1 (fr) Dispositif de reconfiguration de memoire
FR2495380B1 (fr) Dispositif de memoire a semiconducteur
NL7806299A (nl) Licht-uitzendende halfgeleider-inrichting.
BR7800732A (pt) Dispositivo semi-condutor
NL7807820A (nl) Halfgeleider-geheugeninrichting.
BE871678A (fr) Dispositif de memoire metal-oxyde-semi-conducteur a n canaux
BE854366A (fr) Dispositif de catheterisme
SE7801698L (sv) Halvledaranordning