BE831681R - Procede de fabrication de structures en relief - Google Patents

Procede de fabrication de structures en relief

Info

Publication number
BE831681R
BE831681R BE158565A BE158565A BE831681R BE 831681 R BE831681 R BE 831681R BE 158565 A BE158565 A BE 158565A BE 158565 A BE158565 A BE 158565A BE 831681 R BE831681 R BE 831681R
Authority
BE
Belgium
Prior art keywords
relief structures
manufacturing relief
manufacturing
structures
relief
Prior art date
Application number
BE158565A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of BE831681R publication Critical patent/BE831681R/xx

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
BE158565A 1974-08-02 1975-07-24 Procede de fabrication de structures en relief BE831681R (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742437348 DE2437348B2 (de) 1974-08-02 1974-08-02 Verfahren zur herstellung von reliefstrukturen

Publications (1)

Publication Number Publication Date
BE831681R true BE831681R (fr) 1975-11-17

Family

ID=5922319

Family Applications (1)

Application Number Title Priority Date Filing Date
BE158565A BE831681R (fr) 1974-08-02 1975-07-24 Procede de fabrication de structures en relief

Country Status (9)

Country Link
US (1) US4040831A (enExample)
JP (1) JPS5541422B2 (enExample)
AT (1) AT359288B (enExample)
BE (1) BE831681R (enExample)
DE (1) DE2437348B2 (enExample)
FR (1) FR2280925A2 (enExample)
GB (1) GB1512973A (enExample)
IT (1) IT1049569B (enExample)
NL (1) NL180144C (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952822B2 (ja) * 1978-04-14 1984-12-21 東レ株式会社 耐熱性感光材料
WO1980000706A1 (fr) * 1978-09-29 1980-04-17 Hitachi Ltd Composition polymere sensible a la lumiere
DE2919841A1 (de) * 1979-05-16 1980-11-20 Siemens Ag Verfahren zur phototechnischen herstellung von reliefstrukturen
DE2933828A1 (de) * 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München Polyoxazol-vorstufen sowie deren herstellung.
US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
US4414312A (en) * 1980-09-03 1983-11-08 E. I. Du Pont De Nemours & Co. Photopolymerizable polyamide ester resin compositions containing an oxygen scavenger
US4410612A (en) * 1980-09-03 1983-10-18 E. I. Du Pont De Nemours And Company Electrical device formed from polymeric heat resistant photopolymerizable composition
US4369247A (en) * 1980-09-03 1983-01-18 E. I. Du Pont De Nemours And Company Process of producing relief structures using polyamide ester resins
JPS58223149A (ja) * 1982-06-22 1983-12-24 Toray Ind Inc 感光性ポリイミド用現像液
US4579809A (en) * 1982-10-22 1986-04-01 Ciba-Geigy Corporation Positive image formation
US4548891A (en) * 1983-02-11 1985-10-22 Ciba Geigy Corporation Photopolymerizable compositions containing prepolymers with olefin double bonds and titanium metallocene photoinitiators
EP0119719B1 (en) * 1983-03-03 1987-05-06 Toray Industries, Inc. Radiation sensitive polymer composition
DE3411660A1 (de) * 1984-03-29 1985-10-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von polyimid- und polyisoindolochinazolindion-vorstufen
DE3513779A1 (de) * 1985-04-17 1986-10-23 Merck Patent Gmbh, 6100 Darmstadt Stabilisierte loesungen strahlungsvernetzbarer polymervorstufen hochwaermebestaendiger polymere
US4741988A (en) * 1985-05-08 1988-05-03 U.S. Philips Corp. Patterned polyimide film, a photosensitive polyamide acid derivative and an electrophoretic image-display cell
EP0291779B1 (de) * 1987-05-18 1994-07-27 Siemens Aktiengesellschaft Wärmebeständige Positivresists und Verfahren zur Herstellung wärmebeständiger Reliefstrukturen
DE3717933A1 (de) * 1987-05-27 1988-12-08 Hoechst Ag Photopolymerisierbares gemisch, dieses enthaltendes aufzeichnungsmaterial und verfahren zur herstellung von hochwaermebestaendigen reliefstrukturen
US5270431A (en) * 1987-07-23 1993-12-14 Basf Aktiengesellschaft Preparation of oligomeric or polymeric radiation-reactive intermediates for solvent-structured layers
DE3808927A1 (de) * 1988-03-17 1989-10-05 Ciba Geigy Ag Negativ-fotoresists von polyimid-typ mit 1,2-disulfonen
DE3837612A1 (de) * 1988-11-05 1990-05-23 Ciba Geigy Ag Positiv-fotoresists von polyimid-typ
US5006488A (en) * 1989-10-06 1991-04-09 International Business Machines Corporation High temperature lift-off process
DE4217688A1 (de) * 1992-05-29 1993-12-02 Basf Lacke & Farben Durch Einwirkung von Strahlung vernetzendes Gemisch und dessen Verwendung zur Herstellung hochtemperaturbeständiger Reliefstrukturen
DE4218718A1 (de) * 1992-06-06 1993-12-09 Basf Lacke & Farben Verfahren zur Herstellung strukturierter Schichten wärmebeständiger Polykondensate
US5756260A (en) * 1993-02-16 1998-05-26 Sumitomo Bakelite Company Limited Photosensitive polyimide resin composition containing a stabilizer and method for formation of relief pattern using same
US5777068A (en) * 1994-09-13 1998-07-07 Nippon Zeon Co., Ltd. Photosensitive polyimide resin composition
JP3170174B2 (ja) 1995-04-18 2001-05-28 日本ゼオン株式会社 ポリイミド系樹脂組成物
US5886136A (en) * 1995-09-12 1999-03-23 Nippon Zeon Co., Ltd. Pattern forming process
US5648451A (en) * 1995-10-10 1997-07-15 Sumitomo Bakelite Company Limited Process for producing photosensitive resin
US5856065A (en) * 1996-03-27 1999-01-05 Olin Microelectronic Chemicals, Inc. Negative working photoresist composition based on polyimide primers
WO1999013381A1 (en) * 1997-09-11 1999-03-18 Arch Specialty Chemicals, Inc. A negatively acting photoresist composition based on polyimide precursors
US6160081A (en) * 1997-10-31 2000-12-12 Nippon Zeon Co., Ltd. Photosensitive polyimide resin composition
JP4529252B2 (ja) 1999-09-28 2010-08-25 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パターンの製造法及び電子部品
US6511789B2 (en) 2000-06-26 2003-01-28 Arch Specialty Chemicals, Inc. Photosensitive polyimide precursor compositions
US6582879B2 (en) 2001-03-27 2003-06-24 Korea Research Institute Of Chemical Technology Reactive photo acid-generating agent and heat-resistant photoresist composition with polyamide precursor
KR100589067B1 (ko) * 2001-10-30 2006-06-14 가부시키가이샤 가네카 감광성 수지 조성물, 이것을 이용한 감광성 필름 및 적층체
JP4317870B2 (ja) * 2003-03-11 2009-08-19 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド 新規な感光性樹脂組成物
KR100981830B1 (ko) * 2005-09-22 2010-09-13 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 네거티브형 감광성 수지 조성물, 패턴 형성방법 및전자부품
WO2007119384A1 (ja) 2006-03-16 2007-10-25 Asahi Glass Company, Limited ネガ型感光性含フッ素芳香族系樹脂組成物
WO2007148384A1 (ja) * 2006-06-20 2007-12-27 Hitachi Chemical Dupont Microsystems Ltd. ネガ型感光性樹脂組成物、パターンの製造方法及び電子部品
WO2008111470A1 (ja) * 2007-03-12 2008-09-18 Hitachi Chemical Dupont Microsystems, Ltd. 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品
JP5176872B2 (ja) * 2007-10-29 2013-04-03 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パタ−ンの製造方法及び電子部品
KR102011084B1 (ko) 2011-07-26 2019-08-14 제이엔씨 주식회사 광경화성 잉크젯 잉크, 경화막, 전자 회로 기판 및 그 제조 방법
KR102219068B1 (ko) 2013-05-17 2021-02-23 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 새로운 폴리머 및 이를 포함하는 열경화성 조성물
US10563014B2 (en) 2017-09-11 2020-02-18 Fujifilm Electronic Materials U.S.A., Inc. Dielectric film forming composition
JP6926939B2 (ja) * 2017-10-23 2021-08-25 東京エレクトロン株式会社 半導体装置の製造方法
JP2022550611A (ja) 2019-10-04 2022-12-02 フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド 平坦化プロセス及び組成物
US20240166818A1 (en) 2021-02-16 2024-05-23 Solvay Specialty Polymers Italy S.P.A. Polyimides having low dielectric loss
US20240150524A1 (en) 2021-02-16 2024-05-09 Solvay Specialty Polymers Italy S.P.A. Polyimides having low dielectric loss

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475176A (en) * 1966-09-06 1969-10-28 Eastman Kodak Co Azide sensitized photosensitive prepolymer compositions
US3650746A (en) * 1969-06-16 1972-03-21 Grace W R & Co Dual image formation on separate supports of photocurable composition
US3858510A (en) * 1971-03-11 1975-01-07 Asahi Chemical Ind Relief structures prepared from photosensitive compositions
US3801638A (en) * 1971-03-12 1974-04-02 Gaf Corp Triacrylyldiethylenetriamine,method of producing the same,and photopolymerization process and system utilizing the same
BE793732A (fr) * 1972-01-10 1973-05-02 Grace W R & Co Composition contenant un polyene et un polythiol
NL177718C (nl) * 1973-02-22 1985-11-01 Siemens Ag Werkwijze ter vervaardiging van reliefstructuren uit warmte-bestendige polymeren.
US3847767A (en) * 1973-03-13 1974-11-12 Grace W R & Co Method of producing a screen printable photocurable solder resist

Also Published As

Publication number Publication date
NL7509204A (nl) 1976-02-04
DE2437348B2 (de) 1976-10-07
US4040831A (en) 1977-08-09
FR2280925A2 (fr) 1976-02-27
IT1049569B (it) 1981-02-10
GB1512973A (en) 1978-06-01
JPS5140922A (enExample) 1976-04-06
NL180144C (nl) 1987-01-02
NL180144B (nl) 1986-08-01
DE2437348A1 (de) 1976-02-19
JPS5541422B2 (enExample) 1980-10-24
AT359288B (de) 1980-10-27
FR2280925B2 (enExample) 1983-03-11
ATA450775A (de) 1980-03-15

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Legal Events

Date Code Title Description
RE20 Patent expired

Owner name: SIEMENS A.G.

Effective date: 19940221