BE813050A - Procede pour fabriquer des circuits integres comportant des transistors a effet de champ possedant des etats de conduction differents - Google Patents

Procede pour fabriquer des circuits integres comportant des transistors a effet de champ possedant des etats de conduction differents

Info

Publication number
BE813050A
BE813050A BE142637A BE142637A BE813050A BE 813050 A BE813050 A BE 813050A BE 142637 A BE142637 A BE 142637A BE 142637 A BE142637 A BE 142637A BE 813050 A BE813050 A BE 813050A
Authority
BE
Belgium
Prior art keywords
integrated circuits
effect transistors
circuits including
manufacturing integrated
including field
Prior art date
Application number
BE142637A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE813050A publication Critical patent/BE813050A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
BE142637A 1973-03-30 1974-03-29 Procede pour fabriquer des circuits integres comportant des transistors a effet de champ possedant des etats de conduction differents BE813050A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2316096A DE2316096B2 (de) 1973-03-30 1973-03-30 Verfahren zur Herstellung von integrierten Schaltungen mit Feldeffekttransistoren unterschiedlichen Leltungszustandes

Publications (1)

Publication Number Publication Date
BE813050A true BE813050A (fr) 1974-07-15

Family

ID=5876572

Family Applications (1)

Application Number Title Priority Date Filing Date
BE142637A BE813050A (fr) 1973-03-30 1974-03-29 Procede pour fabriquer des circuits integres comportant des transistors a effet de champ possedant des etats de conduction differents

Country Status (13)

Country Link
US (1) US3919766A (enExample)
JP (1) JPS49131084A (enExample)
AT (1) AT339376B (enExample)
BE (1) BE813050A (enExample)
CA (1) CA1011004A (enExample)
CH (1) CH570043A5 (enExample)
DE (1) DE2316096B2 (enExample)
FR (1) FR2223837B1 (enExample)
GB (1) GB1443479A (enExample)
IT (1) IT1011153B (enExample)
LU (1) LU69730A1 (enExample)
NL (1) NL7404085A (enExample)
SE (1) SE386543B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144275A (en) * 1977-05-20 1978-12-15 Matsushita Electric Ind Co Ltd Insulating gate type semiconductor device and its manufacture
JPS6127671A (ja) * 1985-05-15 1986-02-07 Nec Corp 半導体装置
DE102016101670B4 (de) * 2016-01-29 2022-11-03 Infineon Technologies Ag Ein Halbleiterbauelement und ein Verfahren zum Bilden eines Halbleiterbauelements

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL162250C (nl) * 1967-11-21 1980-04-15 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen.
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices
US3783052A (en) * 1972-11-10 1974-01-01 Motorola Inc Process for manufacturing integrated circuits on an alumina substrate

Also Published As

Publication number Publication date
LU69730A1 (enExample) 1974-07-17
DE2316096B2 (de) 1975-02-27
AT339376B (de) 1977-10-10
NL7404085A (enExample) 1974-10-02
ATA213774A (de) 1977-02-15
FR2223837B1 (enExample) 1977-09-30
JPS49131084A (enExample) 1974-12-16
CH570043A5 (enExample) 1975-11-28
CA1011004A (en) 1977-05-24
FR2223837A1 (enExample) 1974-10-25
IT1011153B (it) 1977-01-20
GB1443479A (en) 1976-07-21
DE2316096A1 (de) 1974-10-03
SE386543B (sv) 1976-08-09
US3919766A (en) 1975-11-18

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