CA1011004A - Fabrication of integrated circuits with field effect transistors having various threshold voltages - Google Patents

Fabrication of integrated circuits with field effect transistors having various threshold voltages

Info

Publication number
CA1011004A
CA1011004A CA196,350A CA196350A CA1011004A CA 1011004 A CA1011004 A CA 1011004A CA 196350 A CA196350 A CA 196350A CA 1011004 A CA1011004 A CA 1011004A
Authority
CA
Canada
Prior art keywords
fabrication
field effect
integrated circuits
effect transistors
threshold voltages
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA196,350A
Other languages
English (en)
Other versions
CA196350S (en
Inventor
Heinrich Schlotterer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1011004A publication Critical patent/CA1011004A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
CA196,350A 1973-03-30 1974-03-29 Fabrication of integrated circuits with field effect transistors having various threshold voltages Expired CA1011004A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2316096A DE2316096B2 (de) 1973-03-30 1973-03-30 Verfahren zur Herstellung von integrierten Schaltungen mit Feldeffekttransistoren unterschiedlichen Leltungszustandes

Publications (1)

Publication Number Publication Date
CA1011004A true CA1011004A (en) 1977-05-24

Family

ID=5876572

Family Applications (1)

Application Number Title Priority Date Filing Date
CA196,350A Expired CA1011004A (en) 1973-03-30 1974-03-29 Fabrication of integrated circuits with field effect transistors having various threshold voltages

Country Status (13)

Country Link
US (1) US3919766A (enExample)
JP (1) JPS49131084A (enExample)
AT (1) AT339376B (enExample)
BE (1) BE813050A (enExample)
CA (1) CA1011004A (enExample)
CH (1) CH570043A5 (enExample)
DE (1) DE2316096B2 (enExample)
FR (1) FR2223837B1 (enExample)
GB (1) GB1443479A (enExample)
IT (1) IT1011153B (enExample)
LU (1) LU69730A1 (enExample)
NL (1) NL7404085A (enExample)
SE (1) SE386543B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144275A (en) * 1977-05-20 1978-12-15 Matsushita Electric Ind Co Ltd Insulating gate type semiconductor device and its manufacture
JPS6127671A (ja) * 1985-05-15 1986-02-07 Nec Corp 半導体装置
DE102016101670B4 (de) * 2016-01-29 2022-11-03 Infineon Technologies Ag Ein Halbleiterbauelement und ein Verfahren zum Bilden eines Halbleiterbauelements

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL162250C (nl) * 1967-11-21 1980-04-15 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen.
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices
US3783052A (en) * 1972-11-10 1974-01-01 Motorola Inc Process for manufacturing integrated circuits on an alumina substrate

Also Published As

Publication number Publication date
LU69730A1 (enExample) 1974-07-17
DE2316096B2 (de) 1975-02-27
AT339376B (de) 1977-10-10
NL7404085A (enExample) 1974-10-02
ATA213774A (de) 1977-02-15
FR2223837B1 (enExample) 1977-09-30
JPS49131084A (enExample) 1974-12-16
CH570043A5 (enExample) 1975-11-28
BE813050A (fr) 1974-07-15
FR2223837A1 (enExample) 1974-10-25
IT1011153B (it) 1977-01-20
GB1443479A (en) 1976-07-21
DE2316096A1 (de) 1974-10-03
SE386543B (sv) 1976-08-09
US3919766A (en) 1975-11-18

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