BE813050A - Procede pour fabriquer des circuits integres comportant des transistors a effet de champ possedant des etats de conduction differents - Google Patents

Procede pour fabriquer des circuits integres comportant des transistors a effet de champ possedant des etats de conduction differents

Info

Publication number
BE813050A
BE813050A BE142637A BE142637A BE813050A BE 813050 A BE813050 A BE 813050A BE 142637 A BE142637 A BE 142637A BE 142637 A BE142637 A BE 142637A BE 813050 A BE813050 A BE 813050A
Authority
BE
Belgium
Prior art keywords
integrated circuits
effect transistors
circuits including
manufacturing integrated
including field
Prior art date
Application number
BE142637A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE813050A publication Critical patent/BE813050A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
BE142637A 1973-03-30 1974-03-29 Procede pour fabriquer des circuits integres comportant des transistors a effet de champ possedant des etats de conduction differents BE813050A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2316096A DE2316096B2 (de) 1973-03-30 1973-03-30 Verfahren zur Herstellung von integrierten Schaltungen mit Feldeffekttransistoren unterschiedlichen Leltungszustandes

Publications (1)

Publication Number Publication Date
BE813050A true BE813050A (fr) 1974-07-15

Family

ID=5876572

Family Applications (1)

Application Number Title Priority Date Filing Date
BE142637A BE813050A (fr) 1973-03-30 1974-03-29 Procede pour fabriquer des circuits integres comportant des transistors a effet de champ possedant des etats de conduction differents

Country Status (13)

Country Link
US (1) US3919766A (fr)
JP (1) JPS49131084A (fr)
AT (1) AT339376B (fr)
BE (1) BE813050A (fr)
CA (1) CA1011004A (fr)
CH (1) CH570043A5 (fr)
DE (1) DE2316096B2 (fr)
FR (1) FR2223837B1 (fr)
GB (1) GB1443479A (fr)
IT (1) IT1011153B (fr)
LU (1) LU69730A1 (fr)
NL (1) NL7404085A (fr)
SE (1) SE386543B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144275A (en) * 1977-05-20 1978-12-15 Matsushita Electric Ind Co Ltd Insulating gate type semiconductor device and its manufacture
JPS6127671A (ja) * 1985-05-15 1986-02-07 Nec Corp 半導体装置
DE102016101670B4 (de) 2016-01-29 2022-11-03 Infineon Technologies Ag Ein Halbleiterbauelement und ein Verfahren zum Bilden eines Halbleiterbauelements

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL162250C (nl) * 1967-11-21 1980-04-15 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen.
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices
US3783052A (en) * 1972-11-10 1974-01-01 Motorola Inc Process for manufacturing integrated circuits on an alumina substrate

Also Published As

Publication number Publication date
IT1011153B (it) 1977-01-20
DE2316096A1 (de) 1974-10-03
AT339376B (de) 1977-10-10
US3919766A (en) 1975-11-18
CA1011004A (en) 1977-05-24
LU69730A1 (fr) 1974-07-17
ATA213774A (de) 1977-02-15
FR2223837B1 (fr) 1977-09-30
CH570043A5 (fr) 1975-11-28
JPS49131084A (fr) 1974-12-16
SE386543B (sv) 1976-08-09
NL7404085A (fr) 1974-10-02
GB1443479A (en) 1976-07-21
FR2223837A1 (fr) 1974-10-25
DE2316096B2 (de) 1975-02-27

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