JPS49131084A - - Google Patents

Info

Publication number
JPS49131084A
JPS49131084A JP49035476A JP3547674A JPS49131084A JP S49131084 A JPS49131084 A JP S49131084A JP 49035476 A JP49035476 A JP 49035476A JP 3547674 A JP3547674 A JP 3547674A JP S49131084 A JPS49131084 A JP S49131084A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49035476A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS49131084A publication Critical patent/JPS49131084A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
JP49035476A 1973-03-30 1974-03-29 Pending JPS49131084A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2316096A DE2316096B2 (de) 1973-03-30 1973-03-30 Verfahren zur Herstellung von integrierten Schaltungen mit Feldeffekttransistoren unterschiedlichen Leltungszustandes

Publications (1)

Publication Number Publication Date
JPS49131084A true JPS49131084A (enExample) 1974-12-16

Family

ID=5876572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49035476A Pending JPS49131084A (enExample) 1973-03-30 1974-03-29

Country Status (13)

Country Link
US (1) US3919766A (enExample)
JP (1) JPS49131084A (enExample)
AT (1) AT339376B (enExample)
BE (1) BE813050A (enExample)
CA (1) CA1011004A (enExample)
CH (1) CH570043A5 (enExample)
DE (1) DE2316096B2 (enExample)
FR (1) FR2223837B1 (enExample)
GB (1) GB1443479A (enExample)
IT (1) IT1011153B (enExample)
LU (1) LU69730A1 (enExample)
NL (1) NL7404085A (enExample)
SE (1) SE386543B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144275A (en) * 1977-05-20 1978-12-15 Matsushita Electric Ind Co Ltd Insulating gate type semiconductor device and its manufacture
JPS6127671A (ja) * 1985-05-15 1986-02-07 Nec Corp 半導体装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016101670B4 (de) * 2016-01-29 2022-11-03 Infineon Technologies Ag Ein Halbleiterbauelement und ein Verfahren zum Bilden eines Halbleiterbauelements

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649886A (en) * 1967-11-21 1972-03-14 Philips Corp Semiconductor device having a semiconductor body of which a surface is at least locally covered with an oxide film and method of manufacturing a planar semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices
US3783052A (en) * 1972-11-10 1974-01-01 Motorola Inc Process for manufacturing integrated circuits on an alumina substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649886A (en) * 1967-11-21 1972-03-14 Philips Corp Semiconductor device having a semiconductor body of which a surface is at least locally covered with an oxide film and method of manufacturing a planar semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144275A (en) * 1977-05-20 1978-12-15 Matsushita Electric Ind Co Ltd Insulating gate type semiconductor device and its manufacture
JPS6127671A (ja) * 1985-05-15 1986-02-07 Nec Corp 半導体装置

Also Published As

Publication number Publication date
LU69730A1 (enExample) 1974-07-17
DE2316096B2 (de) 1975-02-27
AT339376B (de) 1977-10-10
NL7404085A (enExample) 1974-10-02
ATA213774A (de) 1977-02-15
FR2223837B1 (enExample) 1977-09-30
CH570043A5 (enExample) 1975-11-28
CA1011004A (en) 1977-05-24
BE813050A (fr) 1974-07-15
FR2223837A1 (enExample) 1974-10-25
IT1011153B (it) 1977-01-20
GB1443479A (en) 1976-07-21
DE2316096A1 (de) 1974-10-03
SE386543B (sv) 1976-08-09
US3919766A (en) 1975-11-18

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