CH570043A5 - - Google Patents

Info

Publication number
CH570043A5
CH570043A5 CH402774A CH402774A CH570043A5 CH 570043 A5 CH570043 A5 CH 570043A5 CH 402774 A CH402774 A CH 402774A CH 402774 A CH402774 A CH 402774A CH 570043 A5 CH570043 A5 CH 570043A5
Authority
CH
Switzerland
Application number
CH402774A
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH570043A5 publication Critical patent/CH570043A5/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
CH402774A 1973-03-30 1974-03-22 CH570043A5 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2316096A DE2316096B2 (de) 1973-03-30 1973-03-30 Verfahren zur Herstellung von integrierten Schaltungen mit Feldeffekttransistoren unterschiedlichen Leltungszustandes

Publications (1)

Publication Number Publication Date
CH570043A5 true CH570043A5 (enExample) 1975-11-28

Family

ID=5876572

Family Applications (1)

Application Number Title Priority Date Filing Date
CH402774A CH570043A5 (enExample) 1973-03-30 1974-03-22

Country Status (13)

Country Link
US (1) US3919766A (enExample)
JP (1) JPS49131084A (enExample)
AT (1) AT339376B (enExample)
BE (1) BE813050A (enExample)
CA (1) CA1011004A (enExample)
CH (1) CH570043A5 (enExample)
DE (1) DE2316096B2 (enExample)
FR (1) FR2223837B1 (enExample)
GB (1) GB1443479A (enExample)
IT (1) IT1011153B (enExample)
LU (1) LU69730A1 (enExample)
NL (1) NL7404085A (enExample)
SE (1) SE386543B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144275A (en) * 1977-05-20 1978-12-15 Matsushita Electric Ind Co Ltd Insulating gate type semiconductor device and its manufacture
JPS6127671A (ja) * 1985-05-15 1986-02-07 Nec Corp 半導体装置
DE102016101670B4 (de) * 2016-01-29 2022-11-03 Infineon Technologies Ag Ein Halbleiterbauelement und ein Verfahren zum Bilden eines Halbleiterbauelements

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL162250C (nl) * 1967-11-21 1980-04-15 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen.
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices
US3783052A (en) * 1972-11-10 1974-01-01 Motorola Inc Process for manufacturing integrated circuits on an alumina substrate

Also Published As

Publication number Publication date
LU69730A1 (enExample) 1974-07-17
DE2316096B2 (de) 1975-02-27
AT339376B (de) 1977-10-10
NL7404085A (enExample) 1974-10-02
ATA213774A (de) 1977-02-15
FR2223837B1 (enExample) 1977-09-30
JPS49131084A (enExample) 1974-12-16
CA1011004A (en) 1977-05-24
BE813050A (fr) 1974-07-15
FR2223837A1 (enExample) 1974-10-25
IT1011153B (it) 1977-01-20
GB1443479A (en) 1976-07-21
DE2316096A1 (de) 1974-10-03
SE386543B (sv) 1976-08-09
US3919766A (en) 1975-11-18

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Legal Events

Date Code Title Description
PL Patent ceased
PL Patent ceased