FR2223837A1 - - Google Patents
Info
- Publication number
- FR2223837A1 FR2223837A1 FR7409675A FR7409675A FR2223837A1 FR 2223837 A1 FR2223837 A1 FR 2223837A1 FR 7409675 A FR7409675 A FR 7409675A FR 7409675 A FR7409675 A FR 7409675A FR 2223837 A1 FR2223837 A1 FR 2223837A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
- H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2316096A DE2316096B2 (de) | 1973-03-30 | 1973-03-30 | Verfahren zur Herstellung von integrierten Schaltungen mit Feldeffekttransistoren unterschiedlichen Leltungszustandes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2223837A1 true FR2223837A1 (enExample) | 1974-10-25 |
| FR2223837B1 FR2223837B1 (enExample) | 1977-09-30 |
Family
ID=5876572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7409675A Expired FR2223837B1 (enExample) | 1973-03-30 | 1974-03-21 |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3919766A (enExample) |
| JP (1) | JPS49131084A (enExample) |
| AT (1) | AT339376B (enExample) |
| BE (1) | BE813050A (enExample) |
| CA (1) | CA1011004A (enExample) |
| CH (1) | CH570043A5 (enExample) |
| DE (1) | DE2316096B2 (enExample) |
| FR (1) | FR2223837B1 (enExample) |
| GB (1) | GB1443479A (enExample) |
| IT (1) | IT1011153B (enExample) |
| LU (1) | LU69730A1 (enExample) |
| NL (1) | NL7404085A (enExample) |
| SE (1) | SE386543B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53144275A (en) * | 1977-05-20 | 1978-12-15 | Matsushita Electric Ind Co Ltd | Insulating gate type semiconductor device and its manufacture |
| JPS6127671A (ja) * | 1985-05-15 | 1986-02-07 | Nec Corp | 半導体装置 |
| DE102016101670B4 (de) * | 2016-01-29 | 2022-11-03 | Infineon Technologies Ag | Ein Halbleiterbauelement und ein Verfahren zum Bilden eines Halbleiterbauelements |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL162250C (nl) * | 1967-11-21 | 1980-04-15 | Philips Nv | Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen. |
| US3673679A (en) * | 1970-12-01 | 1972-07-04 | Texas Instruments Inc | Complementary insulated gate field effect devices |
| US3783052A (en) * | 1972-11-10 | 1974-01-01 | Motorola Inc | Process for manufacturing integrated circuits on an alumina substrate |
-
1973
- 1973-03-30 DE DE2316096A patent/DE2316096B2/de not_active Ceased
-
1974
- 1974-03-14 AT AT213774A patent/AT339376B/de active
- 1974-03-21 FR FR7409675A patent/FR2223837B1/fr not_active Expired
- 1974-03-22 CH CH402774A patent/CH570043A5/xx not_active IP Right Cessation
- 1974-03-25 GB GB1307174A patent/GB1443479A/en not_active Expired
- 1974-03-26 NL NL7404085A patent/NL7404085A/xx unknown
- 1974-03-26 IT IT49645/74A patent/IT1011153B/it active
- 1974-03-28 US US455591A patent/US3919766A/en not_active Expired - Lifetime
- 1974-03-28 SE SE7404193A patent/SE386543B/xx unknown
- 1974-03-28 LU LU69730A patent/LU69730A1/xx unknown
- 1974-03-29 BE BE142637A patent/BE813050A/xx unknown
- 1974-03-29 JP JP49035476A patent/JPS49131084A/ja active Pending
- 1974-03-29 CA CA196,350A patent/CA1011004A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| LU69730A1 (enExample) | 1974-07-17 |
| DE2316096B2 (de) | 1975-02-27 |
| AT339376B (de) | 1977-10-10 |
| NL7404085A (enExample) | 1974-10-02 |
| ATA213774A (de) | 1977-02-15 |
| FR2223837B1 (enExample) | 1977-09-30 |
| JPS49131084A (enExample) | 1974-12-16 |
| CH570043A5 (enExample) | 1975-11-28 |
| CA1011004A (en) | 1977-05-24 |
| BE813050A (fr) | 1974-07-15 |
| IT1011153B (it) | 1977-01-20 |
| GB1443479A (en) | 1976-07-21 |
| DE2316096A1 (de) | 1974-10-03 |
| SE386543B (sv) | 1976-08-09 |
| US3919766A (en) | 1975-11-18 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |