BE780695A - Procede de fabrication d'un transistor a effet de champ - Google Patents

Procede de fabrication d'un transistor a effet de champ

Info

Publication number
BE780695A
BE780695A BE780695A BE780695A BE780695A BE 780695 A BE780695 A BE 780695A BE 780695 A BE780695 A BE 780695A BE 780695 A BE780695 A BE 780695A BE 780695 A BE780695 A BE 780695A
Authority
BE
Belgium
Prior art keywords
manufacturing
field
effect transistor
transistor
effect
Prior art date
Application number
BE780695A
Other languages
English (en)
French (fr)
Inventor
J C North
B R Pruniaux
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE780695A publication Critical patent/BE780695A/xx

Links

Classifications

    • H10P34/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10P30/206—
    • H10P30/208—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/126—Power FETs
BE780695A 1971-03-18 1972-03-15 Procede de fabrication d'un transistor a effet de champ BE780695A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12552871A 1971-03-18 1971-03-18

Publications (1)

Publication Number Publication Date
BE780695A true BE780695A (fr) 1972-07-03

Family

ID=22420128

Family Applications (1)

Application Number Title Priority Date Filing Date
BE780695A BE780695A (fr) 1971-03-18 1972-03-15 Procede de fabrication d'un transistor a effet de champ

Country Status (8)

Country Link
US (1) US3700978A (enExample)
JP (1) JPS5225076B1 (enExample)
BE (1) BE780695A (enExample)
DE (1) DE2212489C3 (enExample)
FR (1) FR2130424B1 (enExample)
GB (1) GB1376492A (enExample)
IT (1) IT953974B (enExample)
NL (1) NL155399B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3971057A (en) * 1973-08-21 1976-07-20 The United States Of America As Represented By The Secretary Of The Navy Lateral photodetector of improved sensitivity
CA1049127A (en) * 1974-03-05 1979-02-20 Kunio Itoh Semiconductor devices with improved heat radiation and current concentration
US4252580A (en) * 1977-10-27 1981-02-24 Messick Louis J Method of producing a microwave InP/SiO2 insulated gate field effect transistor
US4194021A (en) * 1977-10-27 1980-03-18 The United States Of America As Represented By The Secretary Of The Navy Microwave InP/SiO2 insulated gate field effect transistor
US4161739A (en) * 1977-10-27 1979-07-17 The United States Of America As Represented By The Secretary Of The Navy Microwave InP/SiO2 insulated gate field effect transistor
US4160984A (en) * 1977-11-14 1979-07-10 Hughes Aircraft Company Schottky-gate field-effect transistor and fabrication process therefor
US4244097A (en) * 1979-03-15 1981-01-13 Hughes Aircraft Company Schottky-gate field-effect transistor and fabrication process therefor
NL8003336A (nl) * 1979-06-12 1980-12-16 Dearnaley G Werkwijze voor de vervaardiging van een halfgeleider- inrichting.
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
US4567503A (en) * 1983-06-29 1986-01-28 Stauffer Chemical Company MIS Device employing elemental pnictide or polyphosphide insulating layers
JPH07118484B2 (ja) * 1987-10-09 1995-12-18 沖電気工業株式会社 ショットキーゲート電界効果トランジスタの製造方法
JPH05299433A (ja) * 1992-04-24 1993-11-12 Toshiba Corp ヘテロ接合バイポーラトランジスタ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484662A (en) * 1965-01-15 1969-12-16 North American Rockwell Thin film transistor on an insulating substrate
GB1140579A (en) * 1966-08-19 1969-01-22 Standard Telephones Cables Ltd Method of making semiconductor devices and devices made thereby
DE1564177A1 (de) * 1966-09-03 1969-12-18 Ibm Deutschland Verfahren zur Herstellung von Halbleiterbauelementen
FR1563533A (enExample) * 1967-05-20 1969-04-11
GB1233545A (enExample) * 1967-08-18 1971-05-26
US3483443A (en) * 1967-09-28 1969-12-09 Hughes Aircraft Co Diode having large capacitance change related to minimal applied voltage
US3563809A (en) * 1968-08-05 1971-02-16 Hughes Aircraft Co Method of making semiconductor devices with ion beams

Also Published As

Publication number Publication date
JPS5225076B1 (enExample) 1977-07-05
FR2130424B1 (enExample) 1974-09-13
GB1376492A (en) 1974-12-04
FR2130424A1 (enExample) 1972-11-03
IT953974B (it) 1973-08-10
DE2212489C3 (de) 1974-08-15
NL155399B (nl) 1977-12-15
DE2212489A1 (de) 1972-10-05
US3700978A (en) 1972-10-24
DE2212489B2 (de) 1974-01-17
NL7203614A (enExample) 1972-09-20

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