JPS5225076B1 - - Google Patents

Info

Publication number
JPS5225076B1
JPS5225076B1 JP47026697A JP2669772A JPS5225076B1 JP S5225076 B1 JPS5225076 B1 JP S5225076B1 JP 47026697 A JP47026697 A JP 47026697A JP 2669772 A JP2669772 A JP 2669772A JP S5225076 B1 JPS5225076 B1 JP S5225076B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47026697A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5225076B1 publication Critical patent/JPS5225076B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P34/40
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10P30/206
    • H10P30/208
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/126Power FETs
JP47026697A 1971-03-18 1972-03-17 Pending JPS5225076B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12552871A 1971-03-18 1971-03-18

Publications (1)

Publication Number Publication Date
JPS5225076B1 true JPS5225076B1 (enExample) 1977-07-05

Family

ID=22420128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47026697A Pending JPS5225076B1 (enExample) 1971-03-18 1972-03-17

Country Status (8)

Country Link
US (1) US3700978A (enExample)
JP (1) JPS5225076B1 (enExample)
BE (1) BE780695A (enExample)
DE (1) DE2212489C3 (enExample)
FR (1) FR2130424B1 (enExample)
GB (1) GB1376492A (enExample)
IT (1) IT953974B (enExample)
NL (1) NL155399B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3971057A (en) * 1973-08-21 1976-07-20 The United States Of America As Represented By The Secretary Of The Navy Lateral photodetector of improved sensitivity
CA1049127A (en) * 1974-03-05 1979-02-20 Kunio Itoh Semiconductor devices with improved heat radiation and current concentration
US4252580A (en) * 1977-10-27 1981-02-24 Messick Louis J Method of producing a microwave InP/SiO2 insulated gate field effect transistor
US4194021A (en) * 1977-10-27 1980-03-18 The United States Of America As Represented By The Secretary Of The Navy Microwave InP/SiO2 insulated gate field effect transistor
US4161739A (en) * 1977-10-27 1979-07-17 The United States Of America As Represented By The Secretary Of The Navy Microwave InP/SiO2 insulated gate field effect transistor
US4160984A (en) * 1977-11-14 1979-07-10 Hughes Aircraft Company Schottky-gate field-effect transistor and fabrication process therefor
US4244097A (en) * 1979-03-15 1981-01-13 Hughes Aircraft Company Schottky-gate field-effect transistor and fabrication process therefor
NL8003336A (nl) * 1979-06-12 1980-12-16 Dearnaley G Werkwijze voor de vervaardiging van een halfgeleider- inrichting.
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
US4567503A (en) * 1983-06-29 1986-01-28 Stauffer Chemical Company MIS Device employing elemental pnictide or polyphosphide insulating layers
JPH07118484B2 (ja) * 1987-10-09 1995-12-18 沖電気工業株式会社 ショットキーゲート電界効果トランジスタの製造方法
JPH05299433A (ja) * 1992-04-24 1993-11-12 Toshiba Corp ヘテロ接合バイポーラトランジスタ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484662A (en) * 1965-01-15 1969-12-16 North American Rockwell Thin film transistor on an insulating substrate
GB1140579A (en) * 1966-08-19 1969-01-22 Standard Telephones Cables Ltd Method of making semiconductor devices and devices made thereby
DE1564177A1 (de) * 1966-09-03 1969-12-18 Ibm Deutschland Verfahren zur Herstellung von Halbleiterbauelementen
FR1563533A (enExample) * 1967-05-20 1969-04-11
GB1233545A (enExample) * 1967-08-18 1971-05-26
US3483443A (en) * 1967-09-28 1969-12-09 Hughes Aircraft Co Diode having large capacitance change related to minimal applied voltage
US3563809A (en) * 1968-08-05 1971-02-16 Hughes Aircraft Co Method of making semiconductor devices with ion beams

Also Published As

Publication number Publication date
FR2130424B1 (enExample) 1974-09-13
GB1376492A (en) 1974-12-04
FR2130424A1 (enExample) 1972-11-03
IT953974B (it) 1973-08-10
DE2212489C3 (de) 1974-08-15
BE780695A (fr) 1972-07-03
NL155399B (nl) 1977-12-15
DE2212489A1 (de) 1972-10-05
US3700978A (en) 1972-10-24
DE2212489B2 (de) 1974-01-17
NL7203614A (enExample) 1972-09-20

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