BE704674A - - Google Patents

Info

Publication number
BE704674A
BE704674A BE704674DA BE704674A BE 704674 A BE704674 A BE 704674A BE 704674D A BE704674D A BE 704674DA BE 704674 A BE704674 A BE 704674A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE704674A publication Critical patent/BE704674A/xx

Links

Classifications

    • H10W10/012—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10P14/61—
    • H10W10/0121—
    • H10W10/0126—
    • H10W10/13—
    • H10W72/5363—
BE704674D 1966-10-05 1967-10-04 BE704674A (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL666614016A NL153374B (nl) 1966-10-05 1966-10-05 Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.

Publications (1)

Publication Number Publication Date
BE704674A true BE704674A (cg-RX-API-DMAC10.html) 1968-04-04

Family

ID=19797850

Family Applications (1)

Application Number Title Priority Date Filing Date
BE704674D BE704674A (cg-RX-API-DMAC10.html) 1966-10-05 1967-10-04

Country Status (13)

Country Link
US (1) US3970486A (cg-RX-API-DMAC10.html)
JP (8) JPS5631893B1 (cg-RX-API-DMAC10.html)
AT (1) AT280349B (cg-RX-API-DMAC10.html)
BE (1) BE704674A (cg-RX-API-DMAC10.html)
CH (1) CH469358A (cg-RX-API-DMAC10.html)
DE (1) DE1614283C3 (cg-RX-API-DMAC10.html)
DK (1) DK121913B (cg-RX-API-DMAC10.html)
ES (1) ES345702A1 (cg-RX-API-DMAC10.html)
FR (1) FR1549386A (cg-RX-API-DMAC10.html)
GB (1) GB1208574A (cg-RX-API-DMAC10.html)
NL (1) NL153374B (cg-RX-API-DMAC10.html)
NO (1) NO125653B (cg-RX-API-DMAC10.html)
SE (1) SE335177B (cg-RX-API-DMAC10.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1952636A1 (de) * 1969-10-18 1971-04-29 Licentia Gmbh Halbleiteranordnung
DE2105178A1 (de) * 1966-10-05 1971-09-02 Philips Nv Verfahren zur Herstellung einer Halbleiteranordnung
DE2133980A1 (de) * 1966-10-05 1972-01-13 Philips Nv Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Halbleiteran Ordnung
USRE28653E (en) * 1968-04-23 1975-12-16 Method of fabricating semiconductor devices
USRE31580E (en) * 1967-06-08 1984-05-01 U.S. Philips Corporation Insulated gate field-effect transistor comprising a mesa channel and a thicker surrounding oxide
US6093620A (en) * 1971-02-02 2000-07-25 National Semiconductor Corporation Method of fabricating integrated circuits with oxidized isolation

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6979877B1 (en) 1965-09-28 2005-12-27 Li Chou H Solid-state device
US7038290B1 (en) 1965-09-28 2006-05-02 Li Chou H Integrated circuit device
US5696402A (en) * 1965-09-28 1997-12-09 Li; Chou H. Integrated circuit device
US6849918B1 (en) * 1965-09-28 2005-02-01 Chou H. Li Miniaturized dielectrically isolated solid state device
BE753245A (fr) * 1969-08-04 1970-12-16 Rca Corp Procede pour la fabrication de dispositifs semiconducteurs
FR2058385A1 (en) * 1969-08-20 1971-05-28 Ibm Diode with schottky barrier
GB1332932A (en) * 1970-01-15 1973-10-10 Mullard Ltd Methods of manufacturing a semiconductor device
US3698966A (en) * 1970-02-26 1972-10-17 North American Rockwell Processes using a masking layer for producing field effect devices having oxide isolation
GB1362512A (en) * 1970-06-15 1974-08-07 Hitachi Ltd Semiconductor device and method for manufacture
NL170902C (nl) * 1970-07-10 1983-01-03 Philips Nv Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.
FR2098325B1 (cg-RX-API-DMAC10.html) * 1970-07-10 1977-04-22 Philips Nv
JPS514756B1 (cg-RX-API-DMAC10.html) * 1970-10-05 1976-02-14
JPS498183A (cg-RX-API-DMAC10.html) * 1972-05-10 1974-01-24
FR2188304B1 (cg-RX-API-DMAC10.html) * 1972-06-15 1977-07-22 Commissariat Energie Atomique
DE2318912A1 (de) * 1972-06-30 1974-01-17 Ibm Integrierte halbleiteranordnung
JPS4960684A (cg-RX-API-DMAC10.html) * 1972-10-12 1974-06-12
JPS5617734B2 (cg-RX-API-DMAC10.html) * 1973-07-19 1981-04-24
GB1437112A (en) 1973-09-07 1976-05-26 Mullard Ltd Semiconductor device manufacture
JPS5159853U (cg-RX-API-DMAC10.html) * 1974-11-06 1976-05-11
JPS5938741B2 (ja) * 1976-07-31 1984-09-19 ティーディーケイ株式会社 半導体装置およびその作製方法
EP0002107A3 (en) * 1977-11-17 1979-09-05 Rca Corporation Method of making a planar semiconductor device
GB2042801B (en) * 1979-02-13 1983-12-14 Standard Telephones Cables Ltd Contacting semicnductor devices
US4441941A (en) * 1980-03-06 1984-04-10 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device employing element isolation using insulating materials
US4274909A (en) * 1980-03-17 1981-06-23 International Business Machines Corporation Method for forming ultra fine deep dielectric isolation
US4317690A (en) * 1980-06-18 1982-03-02 Signetics Corporation Self-aligned double polysilicon MOS fabrication
US4506435A (en) * 1981-07-27 1985-03-26 International Business Machines Corporation Method for forming recessed isolated regions
US4454647A (en) * 1981-08-27 1984-06-19 International Business Machines Corporation Isolation for high density integrated circuits
US4454646A (en) * 1981-08-27 1984-06-19 International Business Machines Corporation Isolation for high density integrated circuits
JPS5873163A (ja) * 1981-10-27 1983-05-02 Toshiba Corp Ｍｏｓ型半導体装置
US4508757A (en) * 1982-12-20 1985-04-02 International Business Machines Corporation Method of manufacturing a minimum bird's beak recessed oxide isolation structure
GB2151844A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
JPS60115416U (ja) * 1984-01-12 1985-08-05 三菱電機株式会社 フラツトキ−型操作ボ−ド
JPS6133323U (ja) * 1984-07-31 1986-02-28 武夫 大坪 キ−ボ−ド表示板
JPS61126696U (cg-RX-API-DMAC10.html) * 1985-01-28 1986-08-08
US4630356A (en) * 1985-09-19 1986-12-23 International Business Machines Corporation Method of forming recessed oxide isolation with reduced steepness of the birds' neck
US5019526A (en) * 1988-09-26 1991-05-28 Nippondenso Co., Ltd. Method of manufacturing a semiconductor device having a plurality of elements
US5077235A (en) * 1989-01-24 1991-12-31 Ricoh Comany, Ltd. Method of manufacturing a semiconductor integrated circuit device having SOI structure
US4968641A (en) * 1989-06-22 1990-11-06 Alexander Kalnitsky Method for formation of an isolating oxide layer
US4987099A (en) * 1989-12-29 1991-01-22 North American Philips Corp. Method for selectively filling contacts or vias or various depths with CVD tungsten
JP3111500B2 (ja) * 1991-05-09 2000-11-20 富士電機株式会社 誘電体分離ウエハの製造方法
JPH05283710A (ja) * 1991-12-06 1993-10-29 Intel Corp 高電圧ｍｏｓトランジスタ及びその製造方法
US5418176A (en) * 1994-02-17 1995-05-23 United Microelectronics Corporation Process for producing memory devices having narrow buried N+ lines
US5661053A (en) * 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
US5756385A (en) * 1994-03-30 1998-05-26 Sandisk Corporation Dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
US5814875A (en) * 1995-01-31 1998-09-29 Nippon Steel Corporation Semiconductor device and method of manufacturing the same apparatus and method for providing semiconductor devices having a field shield element between devices
US20040144999A1 (en) * 1995-06-07 2004-07-29 Li Chou H. Integrated circuit device
US5747357A (en) 1995-09-27 1998-05-05 Mosel Vitelic, Inc. Modified poly-buffered isolation
US5883566A (en) * 1997-02-24 1999-03-16 International Business Machines Corporation Noise-isolated buried resistor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3212162A (en) * 1962-01-05 1965-10-19 Fairchild Camera Instr Co Fabricating semiconductor devices
US3165430A (en) * 1963-01-21 1965-01-12 Siliconix Inc Method of ultra-fine semiconductor manufacture
US3279963A (en) * 1963-07-23 1966-10-18 Ibm Fabrication of semiconductor devices
DE1439737B2 (de) * 1964-10-31 1970-05-06 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zum Herstellen einer Halblei teranordnung
US3484313A (en) * 1965-03-25 1969-12-16 Hitachi Ltd Method of manufacturing semiconductor devices
US3442011A (en) * 1965-06-30 1969-05-06 Texas Instruments Inc Method for isolating individual devices in an integrated circuit monolithic bar
US3479237A (en) * 1966-04-08 1969-11-18 Bell Telephone Labor Inc Etch masks on semiconductor surfaces
US3649386A (en) * 1968-04-23 1972-03-14 Bell Telephone Labor Inc Method of fabricating semiconductor devices
US3550292A (en) * 1968-08-23 1970-12-29 Nippon Electric Co Semiconductor device and method of manufacturing the same
JPS4917069A (cg-RX-API-DMAC10.html) * 1972-06-10 1974-02-15
JPS5232803B2 (cg-RX-API-DMAC10.html) * 1972-08-15 1977-08-24

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2105178A1 (de) * 1966-10-05 1971-09-02 Philips Nv Verfahren zur Herstellung einer Halbleiteranordnung
DE2133980A1 (de) * 1966-10-05 1972-01-13 Philips Nv Verfahren zur Herstellung einer Halbleiteranordnung und durch dieses Verfahren hergestellte Halbleiteran Ordnung
USRE31580E (en) * 1967-06-08 1984-05-01 U.S. Philips Corporation Insulated gate field-effect transistor comprising a mesa channel and a thicker surrounding oxide
USRE28653E (en) * 1968-04-23 1975-12-16 Method of fabricating semiconductor devices
DE1952636A1 (de) * 1969-10-18 1971-04-29 Licentia Gmbh Halbleiteranordnung
US6093620A (en) * 1971-02-02 2000-07-25 National Semiconductor Corporation Method of fabricating integrated circuits with oxidized isolation

Also Published As

Publication number Publication date
DK121913B (da) 1971-12-20
NL6614016A (cg-RX-API-DMAC10.html) 1968-04-08
NO125653B (cg-RX-API-DMAC10.html) 1972-10-09
AT280349B (de) 1970-04-10
JPS4923071B1 (cg-RX-API-DMAC10.html) 1974-06-13
SE335177B (cg-RX-API-DMAC10.html) 1971-05-17
GB1208574A (en) 1970-10-14
FR1549386A (cg-RX-API-DMAC10.html) 1968-12-13
ES345702A1 (es) 1969-02-01
DE1614283B2 (de) 1975-06-05
CH469358A (de) 1969-02-28
JPS4939308B1 (cg-RX-API-DMAC10.html) 1974-10-24
JPS5434596B1 (cg-RX-API-DMAC10.html) 1979-10-27
JPS5435071B1 (cg-RX-API-DMAC10.html) 1979-10-31
JPS5838937B1 (cg-RX-API-DMAC10.html) 1983-08-26
JPS4939309B1 (cg-RX-API-DMAC10.html) 1974-10-24
DE1614283C3 (de) 1983-03-10
NL153374B (nl) 1977-05-16
JPS5631893B1 (cg-RX-API-DMAC10.html) 1981-07-24
DE1614283A1 (de) 1970-05-27
JPS5134274B1 (cg-RX-API-DMAC10.html) 1976-09-25
US3970486A (en) 1976-07-20

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Legal Events

Date Code Title Description
RE20 Patent expired

Owner name: N.V. PHILIPS GLOEILAMPENFABRIEKEN

Effective date: 19871004