FR2058385A1 - Diode with schottky barrier - Google Patents

Diode with schottky barrier

Info

Publication number
FR2058385A1
FR2058385A1 FR7022206A FR7022206A FR2058385A1 FR 2058385 A1 FR2058385 A1 FR 2058385A1 FR 7022206 A FR7022206 A FR 7022206A FR 7022206 A FR7022206 A FR 7022206A FR 2058385 A1 FR2058385 A1 FR 2058385A1
Authority
FR
France
Prior art keywords
diode
schottky barrier
metal
barrier
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7022206A
Other languages
French (fr)
Other versions
FR2058385B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2058385A1 publication Critical patent/FR2058385A1/en
Application granted granted Critical
Publication of FR2058385B1 publication Critical patent/FR2058385B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The semiconductor body is raised locally from the surrounding monocrystalline material and a metal layer is applied to this raised portion, forming a metal semiconductor barrier. Specif. the barrier metal consists of Au, Mo, Cr, Ni, Pd, W, Sn, platinum silicide or mixtures thereof, while the semi-conductor body consists of Si.
FR7022206A 1969-08-20 1970-06-17 Diode with schottky barrier Granted FR2058385A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85159869A 1969-08-20 1969-08-20

Publications (2)

Publication Number Publication Date
FR2058385A1 true FR2058385A1 (en) 1971-05-28
FR2058385B1 FR2058385B1 (en) 1974-02-01

Family

ID=25311171

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7022206A Granted FR2058385A1 (en) 1969-08-20 1970-06-17 Diode with schottky barrier

Country Status (6)

Country Link
JP (1) JPS4916231B1 (en)
BE (1) BE752537A (en)
CA (1) CA934477A (en)
DE (1) DE2040434C3 (en)
FR (1) FR2058385A1 (en)
NL (1) NL7012158A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267961A (en) * 1975-12-03 1977-06-06 Mitsubishi Electric Corp Electrode formation of semiconductor unit
JPH0211485U (en) * 1988-07-07 1990-01-24

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE63253C (en) * L. RITTER in Grabow, Mecklenburg-Schwerin Mash duration control device
FR1549386A (en) * 1966-10-05 1968-12-13
DE1811618A1 (en) * 1967-11-30 1969-08-14 Texas Instruments Inc Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE63253C (en) * L. RITTER in Grabow, Mecklenburg-Schwerin Mash duration control device
FR1549386A (en) * 1966-10-05 1968-12-13
DE1811618A1 (en) * 1967-11-30 1969-08-14 Texas Instruments Inc Semiconductor device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE IBM TECHNICAL DISCLOSURE BULLETIN VOL.11,MAI 1969,"TRANSISTOR FOR MONOLITHIC CIRCUITS"L.MAHEUX,) *
CIRCUITS"L.MAHEUX,) *
REVUE AMERICAINE IBM TECHNICAL DISCLOSURE BULLETIN VOL.11,MAI 1969,"TRANSISTOR FOR MONOLITHIC *

Also Published As

Publication number Publication date
NL7012158A (en) 1971-02-23
DE2040434A1 (en) 1971-02-25
BE752537A (en) 1970-12-01
JPS4916231B1 (en) 1974-04-20
DE2040434C3 (en) 1978-04-06
DE2040434B2 (en) 1977-08-04
CA934477A (en) 1973-09-25
FR2058385B1 (en) 1974-02-01

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse