GB1085477A - Method of making electrical contact to gallium arsenide and product thereof - Google Patents
Method of making electrical contact to gallium arsenide and product thereofInfo
- Publication number
- GB1085477A GB1085477A GB40098/66A GB4009866A GB1085477A GB 1085477 A GB1085477 A GB 1085477A GB 40098/66 A GB40098/66 A GB 40098/66A GB 4009866 A GB4009866 A GB 4009866A GB 1085477 A GB1085477 A GB 1085477A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gallium arsenide
- wafer
- layer
- gold
- eutectic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 8
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 abstract 3
- 238000005275 alloying Methods 0.000 abstract 3
- 230000005496 eutectics Effects 0.000 abstract 3
- 229910052759 nickel Inorganic materials 0.000 abstract 3
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000012467 final product Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/01—Manufacture or treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,085,477. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Sept. 8, 1966 [Sept. 22, 1965], No. 40098/66. Heading H1K. An electrical contact to a gallium arsenide wafer (e.g. for a Gunn effect device) is made by depositing thereon in vacuo a gold-germanium eutectic, then a nickel layer and alloying the gold-germanium to the wafer. In the embodiment a mixture of 88% (by weight) Au and 12% Ge is placed in a crucible with a Ni strip in a chamber with the gallium arsenide wafer; on heating the Ni evaporates at a higher temperature and forms a covering layer on the Au-Ge eutectic on the wafer which is heated to 450 C. for the alloying. Fig. 4 shows the final product with gallium arsenide layer 2, eutectic layer 7 and 9 and nickel layers 11; the nickel prevents globulation of the gold-germanium during alloying.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US489271A US3386867A (en) | 1965-09-22 | 1965-09-22 | Method for providing electrical contacts to a wafer of gaas |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1085477A true GB1085477A (en) | 1967-10-04 |
Family
ID=23943131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB40098/66A Expired GB1085477A (en) | 1965-09-22 | 1966-09-08 | Method of making electrical contact to gallium arsenide and product thereof |
Country Status (4)
Country | Link |
---|---|
US (1) | US3386867A (en) |
DE (1) | DE1521336A1 (en) |
FR (1) | FR1490410A (en) |
GB (1) | GB1085477A (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3532562A (en) * | 1968-10-28 | 1970-10-06 | Us Navy | Ohmic low resistance contact to gallium arsenide |
NL7013226A (en) * | 1970-09-08 | 1972-03-10 | Philips Nv | |
DE2359640C2 (en) * | 1973-11-30 | 1983-09-15 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Electrical connection contact to a semiconductor body and use |
US3889286A (en) * | 1973-12-26 | 1975-06-10 | Gen Electric | Transparent multiple contact for semiconductor light conversion elements |
US3909929A (en) * | 1973-12-26 | 1975-10-07 | Gen Electric | Method of making contacts to semiconductor light conversion elements |
US3871016A (en) * | 1973-12-26 | 1975-03-11 | Gen Electric | Reflective coated contact for semiconductor light conversion elements |
US3871008A (en) * | 1973-12-26 | 1975-03-11 | Gen Electric | Reflective multiple contact for semiconductor light conversion elements |
US4011583A (en) * | 1974-09-03 | 1977-03-08 | Bell Telephone Laboratories, Incorporated | Ohmics contacts of germanium and palladium alloy from group III-V n-type semiconductors |
GB1574525A (en) * | 1977-04-13 | 1980-09-10 | Philips Electronic Associated | Method of manufacturing semiconductor devices and semiconductor devices manufactured by the method |
US4853346A (en) * | 1987-12-31 | 1989-08-01 | International Business Machines Corporation | Ohmic contacts for semiconductor devices and method for forming ohmic contacts |
US7368316B2 (en) * | 1999-04-23 | 2008-05-06 | The Furukawa Electric Co., Ltd. | Surface-emission semiconductor laser device |
US7881359B2 (en) * | 1999-04-23 | 2011-02-01 | The Furukawa Electric Co., Ltd | Surface-emission semiconductor laser device |
JP2000307190A (en) * | 1999-04-23 | 2000-11-02 | Furukawa Electric Co Ltd:The | Manufacture of surface emitting semiconductor laser |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL260298A (en) * | 1960-01-20 | |||
US3114088A (en) * | 1960-08-23 | 1963-12-10 | Texas Instruments Inc | Gallium arsenide devices and contact therefor |
CH396228A (en) * | 1962-05-29 | 1965-07-31 | Siemens Ag | Method for producing a highly doped p-conductive zone in a semiconductor body, in particular made of silicon |
US3337378A (en) * | 1963-09-06 | 1967-08-22 | Hitachi Ltd | Method for the production of semiconductor devices |
-
1965
- 1965-09-22 US US489271A patent/US3386867A/en not_active Expired - Lifetime
-
1966
- 1966-08-18 FR FR8000A patent/FR1490410A/en not_active Expired
- 1966-09-08 GB GB40098/66A patent/GB1085477A/en not_active Expired
- 1966-09-17 DE DE19661521336 patent/DE1521336A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US3386867A (en) | 1968-06-04 |
FR1490410A (en) | 1967-07-28 |
DE1521336A1 (en) | 1969-07-31 |
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