BE547698A - - Google Patents

Info

Publication number
BE547698A
BE547698A BE547698DA BE547698A BE 547698 A BE547698 A BE 547698A BE 547698D A BE547698D A BE 547698DA BE 547698 A BE547698 A BE 547698A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE547698A publication Critical patent/BE547698A/xx
Priority claimed from US507312A external-priority patent/US2763822A/en
Priority claimed from US525595A external-priority patent/US2801375A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
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    • H01L2924/01076—Osmium [Os]
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    • H01L2924/01082—Lead [Pb]
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    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Ceramic Products (AREA)
  • Die Bonding (AREA)
  • Contacts (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
BE547698D 1955-05-10 BE547698A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US507312A US2763822A (en) 1955-05-10 1955-05-10 Silicon semiconductor devices
US525595A US2801375A (en) 1955-08-01 1955-08-01 Silicon semiconductor devices and processes for making them

Publications (1)

Publication Number Publication Date
BE547698A true BE547698A (de) 1900-01-01

Family

ID=27055794

Family Applications (2)

Application Number Title Priority Date Filing Date
BE547698D BE547698A (de) 1955-05-10
BE550001A BE550001A (fr) 1955-05-10 1956-08-01 Semiconducteurs au silicium et procedes pour leur fabrication

Family Applications After (1)

Application Number Title Priority Date Filing Date
BE550001A BE550001A (fr) 1955-05-10 1956-08-01 Semiconducteurs au silicium et procedes pour leur fabrication

Country Status (6)

Country Link
BE (2) BE550001A (de)
CH (2) CH350720A (de)
DE (2) DE1050450B (de)
FR (2) FR1153475A (de)
GB (2) GB832067A (de)
NL (2) NL109558C (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1285068B (de) * 1957-01-11 1968-12-12 Siemens Ag Legierungskontakt auf mit einer Goldschicht versehenen Halbleiterkristallen
NL243222A (de) * 1958-09-10 1900-01-01
NL242265A (de) * 1958-09-30 1900-01-01
NL239127A (de) * 1959-05-12
DE1233949B (de) * 1959-07-13 1967-02-09 Siemens Ag Verfahren zur Herstellung einer Halbleiter-gleichrichteranordnung mit einem einkristallinen Halbleiterkoerper
NL249694A (de) * 1959-12-30
DE1113519B (de) * 1960-02-25 1961-09-07 Bosch Gmbh Robert Siliziumgleichrichter fuer hohe Stromstaerken
NL260951A (de) * 1960-03-07
DE1153461B (de) * 1960-06-23 1963-08-29 Siemens Ag Halbleiteranordnung
DE1141029B (de) * 1960-06-23 1962-12-13 Siemens Ag Halbleiteranordnung und Verfahren zu ihrer Herstellung
NL269346A (de) * 1960-09-20
DE1133834B (de) * 1960-09-21 1962-07-26 Siemens Ag Siliziumgleichrichter und Verfahren zu dessen Herstellung
NL270339A (de) * 1960-10-20
DE1229649B (de) * 1961-08-10 1966-12-01 Siemens Ag Verfahren zum Herstellen eines Halbleiter-elementes und Halbleiteranordnung mit einem nach diesem Verfahren hergestellten Halbleiterelement
DE1240187B (de) * 1961-08-10 1967-05-11 Siemens Ag Verfahren zur Herstellung eines sperrfreien Kontaktes durch Auflegieren von Aluminium
DE1246129B (de) * 1961-12-28 1967-08-03 Westinghouse Electric Corp Verfahren zum Herstellen eines Halbleiterbauelementes
DE1185731B (de) * 1962-03-28 1965-01-21 Siemens Ag Halbleiterelement mit pn-UEbergang
DE1295697B (de) * 1962-05-23 1969-05-22 Walter Brandt Gmbh Halbleiterbauelement und Verfahren zu seiner Herstellung
US3368120A (en) * 1965-03-22 1968-02-06 Gen Electric Multilayer contact system for semiconductor devices
DE1483298B1 (de) * 1965-06-11 1971-01-28 Siemens Ag Elektrische Kontaktanordnung zwischen einem Germanium-Silizium-Halbleiterkoerper und einem Kontaktstueck und Verfahren zur Herstellung derselben
FR2046592A5 (de) * 1970-04-30 1971-03-05 Silec Semi Conducteurs
GB2031223A (en) * 1978-09-22 1980-04-16 Gen Instrument Corp Method for bonding a refractory metal contact member to a semiconductor body
SE9203533L (sv) * 1992-11-24 1994-05-24 Asea Brown Boveri Anordning för kylning av skivformiga kraftelektronikelement jämte skivformigt kraftelektronikelement avsett att monteras i sådan kylanordning
JP6079375B2 (ja) * 2013-03-29 2017-02-15 三菱マテリアル株式会社 ハンダ粉末及びその製造方法並びにこの粉末を用いたハンダ用ペースト
DE102015108056A1 (de) * 2015-05-21 2016-11-24 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil, optoelektronische Anordnung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
CN112186044A (zh) * 2020-09-30 2021-01-05 中国振华集团永光电子有限公司（国营第八七三厂） 一种玻璃钝化实体封装低压二极管及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2220961A (en) * 1937-11-06 1940-11-12 Bell Telephone Labor Inc Soldering alloy
US2555001A (en) * 1947-02-04 1951-05-29 Bell Telephone Labor Inc Bonded article and method of bonding
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it
DE872602C (de) * 1951-03-20 1953-04-02 Siemens Ag Verfahren zur Befestigung von Halbleitern
BE522837A (de) * 1952-09-16
NL104654C (de) * 1952-12-31 1900-01-01
GB8817261D0 (en) * 1988-07-20 1988-08-24 Sperry Sun Inc Down-hole bearing assemblies for maintaining survey instrument assembly & core barrel orientation

Also Published As

Publication number Publication date
DE1292260B (de) 1969-04-10
NL208617A (de) 1900-01-01
FR1157057A (fr) 1958-05-27
GB823559A (en) 1959-11-11
DE1050450B (de) 1959-02-12
NL109558C (de) 1900-01-01
CH350720A (de) 1960-12-15
GB832067A (en) 1960-04-06
CH367896A (de) 1963-03-15
FR1153475A (fr) 1958-03-11
BE550001A (fr) 1956-08-31

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