US3046124A
(en)
*
|
1949-07-23 |
1962-07-24 |
Azoplate Corp |
Process for the manufacture of printing plates and light-sensitive material suitablefor use therein
|
US3046119A
(en)
*
|
1950-08-01 |
1962-07-24 |
Azoplate Corp |
Light sensitive material for printing and process for making printing plates
|
NL170716B
(nl)
*
|
1951-06-30 |
|
Agfa Gevaert Nv |
Werkwijze voor de vervaardiging van polymeerfoelie door extrusie.
|
US2767092A
(en)
*
|
1951-12-06 |
1956-10-16 |
Azoplate Corp |
Light sensitive material for lithographic printing
|
NL77599C
(ru)
*
|
1952-01-05 |
1954-10-15 |
|
|
NL179697B
(nl)
*
|
1952-08-16 |
|
Philips Nv |
Inrichting voor het ontsteken en voeden van een gasen/of dampontladingslamp.
|
GB742557A
(en)
*
|
1952-10-01 |
1955-12-30 |
Kalle & Co Ag |
Light-sensitive material for photomechanical reproduction and process for the production of images
|
DE938233C
(de)
*
|
1953-03-11 |
1956-01-26 |
Kalle & Co Ag |
Lichtempfindliches Material fuer die photomechanische Herstellung von Druckformen
|
US2907655A
(en)
*
|
1953-09-30 |
1959-10-06 |
Schmidt Maximilian Paul |
Light-sensitive material for the photo-mechanical reproduction and process for the production of images
|
NL195002A
(ru)
*
|
1954-03-12 |
1900-01-01 |
|
|
NL96874C
(ru)
*
|
1954-04-03 |
|
|
|
NL96873C
(ru)
*
|
1954-04-03 |
|
|
|
NL95407C
(ru)
*
|
1954-08-20 |
|
|
|
NL199484A
(ru)
*
|
1954-08-20 |
|
|
|
DE949383C
(de)
*
|
1954-08-26 |
1956-09-20 |
Kalle & Co Ag |
Lichtempfindliche Metallfolie fuer die Druckplattenherstellung, welche mit Diazosulfonaten lichtempfindlich gemacht ist
|
US3029146A
(en)
*
|
1955-02-25 |
1962-04-10 |
Azoplate Corp |
Reproduction material
|
NL204620A
(ru)
*
|
1955-02-25 |
|
|
|
US3046114A
(en)
*
|
1955-03-01 |
1962-07-24 |
Azoplate Corp |
Diazo compounds and printing plates manufactured therefrom
|
BE560264A
(ru)
*
|
1956-09-25 |
|
|
|
US3019105A
(en)
*
|
1957-02-28 |
1962-01-30 |
Harris Intertype Corp |
Treatment of diazo-sensitized lithographic plates
|
BE569884A
(ru)
*
|
1957-08-03 |
|
|
|
US2975053A
(en)
*
|
1958-10-06 |
1961-03-14 |
Azoplate Corp |
Reproduction material
|
NL129161C
(ru)
*
|
1959-01-14 |
|
|
|
NL247405A
(ru)
*
|
1959-01-15 |
|
|
|
NL247406A
(ru)
*
|
1959-01-17 |
|
|
|
NL247588A
(ru)
*
|
1959-01-21 |
|
|
|
NL125781C
(ru)
*
|
1959-02-04 |
|
|
|
DE1114705C2
(de)
*
|
1959-04-16 |
1962-04-12 |
Kalle Ag |
Lichtempfindliche Schichten fuer die photomechanische Herstellung von Druckformen
|
BE593836A
(ru)
*
|
1959-08-05 |
|
|
|
NL255348A
(ru)
*
|
1959-08-29 |
|
|
|
NL255517A
(ru)
*
|
1959-09-04 |
|
|
|
US3086861A
(en)
*
|
1960-07-01 |
1963-04-23 |
Gen Aniline & Film Corp |
Printing plates comprising ink receptive azo dye surfaces
|
BE606642A
(ru)
*
|
1960-07-29 |
|
|
|
BE613039A
(ru)
*
|
1961-01-25 |
|
|
|
BE629055A
(ru)
*
|
1961-10-13 |
|
|
|
US3260599A
(en)
*
|
1962-11-19 |
1966-07-12 |
Minnesota Mining & Mfg |
Vesicular diazo copy-sheet containing photoreducible dye
|
US3210531A
(en)
*
|
1963-03-18 |
1965-10-05 |
Samuel M Neely |
Outdoor floodlighting assembly
|
CA774047A
(en)
*
|
1963-12-09 |
1967-12-19 |
Shipley Company |
Light-sensitive material and process for the development thereof
|
US3331944A
(en)
*
|
1965-03-02 |
1967-07-18 |
Electro Therm |
Plug-in heating element assembly
|
US3387975A
(en)
*
|
1965-03-10 |
1968-06-11 |
Sony Corp |
Method of making color screen of a cathode ray tube
|
GB1116737A
(en)
*
|
1966-02-28 |
1968-06-12 |
Agfa Gevaert Nv |
Bis-(o-quinone diazide) modified bisphenols
|
NL136645C
(ru)
*
|
1966-12-12 |
|
|
|
US3635709A
(en)
*
|
1966-12-15 |
1972-01-18 |
Polychrome Corp |
Light-sensitive lithographic plate
|
US3984250A
(en)
*
|
1970-02-12 |
1976-10-05 |
Eastman Kodak Company |
Light-sensitive diazoketone and azide compositions and photographic elements
|
GB1347759A
(en)
*
|
1971-06-17 |
1974-02-27 |
Howson Algraphy Ltd |
Light sensitive materials
|
JPS5539825B2
(ru)
*
|
1972-05-12 |
1980-10-14 |
|
|
JPS5024641B2
(ru)
*
|
1972-10-17 |
1975-08-18 |
|
|
US3950173A
(en)
*
|
1973-02-12 |
1976-04-13 |
Rca Corporation |
Electron beam recording article with o-quinone diazide compound
|
US4024122A
(en)
*
|
1973-02-12 |
1977-05-17 |
Rca Corporation |
Method of purifying 2,4-bis(6-diazo-5,6-dihydro-5-oxo-1-naphthalenesulfonyloxy benzophenone)
|
US3852771A
(en)
*
|
1973-02-12 |
1974-12-03 |
Rca Corp |
Electron beam recording process
|
DE2331377C2
(de)
*
|
1973-06-20 |
1982-10-14 |
Hoechst Ag, 6000 Frankfurt |
Lichtempfindliches Kopiermaterial
|
US4327022A
(en)
*
|
1973-08-16 |
1982-04-27 |
Sterling Drug Inc. |
Heterocyclic alkyl naphthols
|
US4169108A
(en)
*
|
1973-08-16 |
1979-09-25 |
Sterling Drug Inc. |
5(OR 6)-[(Substituted-amino)alkyl]-2,3-naphthalenediols
|
US4139384A
(en)
*
|
1974-02-21 |
1979-02-13 |
Fuji Photo Film Co., Ltd. |
Photosensitive polymeric o-quinone diazide containing lithographic printing plate and process of using the plate
|
JPS5645127B2
(ru)
*
|
1974-02-25 |
1981-10-24 |
|
|
US4007047A
(en)
*
|
1974-06-06 |
1977-02-08 |
International Business Machines Corporation |
Modified processing of positive photoresists
|
GB1513368A
(en)
*
|
1974-07-08 |
1978-06-07 |
Vickers Ltd |
Processing of radiation-sensitive members
|
DE2530502C2
(de)
*
|
1974-07-22 |
1985-07-18 |
American Hoechst Corp., Bridgewater, N.J. |
Verfahren zum gleichzeitigen Entwickeln und Konservieren von Druckplatten sowie dafür geeignete Behandlungslösung
|
DE2447225C2
(de)
*
|
1974-10-03 |
1983-12-22 |
Ibm Deutschland Gmbh, 7000 Stuttgart |
Verfahren zum Ablösen von positiven Photolack
|
US4005437A
(en)
*
|
1975-04-18 |
1977-01-25 |
Rca Corporation |
Method of recording information in which the electron beam sensitive material contains 4,4'-bis(3-diazo-3-4-oxo-1-naphthalene sulfonyloxy)benzil
|
CA1085212A
(en)
*
|
1975-05-27 |
1980-09-09 |
Ronald H. Engebrecht |
Use of volatile carboxylic acids in improved photoresists containing quinone diazides
|
DE2529054C2
(de)
*
|
1975-06-30 |
1982-04-29 |
Ibm Deutschland Gmbh, 7000 Stuttgart |
Verfahren zur Herstellung eines zur Vorlage negativen Resistbildes
|
US4148654A
(en)
*
|
1976-07-22 |
1979-04-10 |
Oddi Michael J |
Positive acting photoresist comprising diazide ester, novolak resin and rosin
|
DE2641099A1
(de)
*
|
1976-09-13 |
1978-03-16 |
Hoechst Ag |
Lichtempfindliche kopierschicht
|
DE2641100C2
(de)
*
|
1976-09-13 |
1987-02-26 |
Hoechst Ag, 6230 Frankfurt |
Lichtempfindliches Gemisch
|
US4059449A
(en)
*
|
1976-09-30 |
1977-11-22 |
Rca Corporation |
Photoresist containing a thiodipropionate compound
|
GB1604652A
(en)
*
|
1977-04-12 |
1981-12-16 |
Vickers Ltd |
Radiation sensitive materials
|
US4263387A
(en)
*
|
1978-03-16 |
1981-04-21 |
Coulter Systems Corporation |
Lithographic printing plate and process for making same
|
DE2828037A1
(de)
*
|
1978-06-26 |
1980-01-10 |
Hoechst Ag |
Lichtempfindliches gemisch
|
US4207107A
(en)
*
|
1978-08-23 |
1980-06-10 |
Rca Corporation |
Novel ortho-quinone diazide photoresist sensitizers
|
DE2948324C2
(de)
*
|
1978-12-01 |
1993-01-14 |
Hitachi, Ltd., Tokio/Tokyo |
Lichtempfindliches Gemisch, enthaltend eine Bisazidverbindung, und Verfahren zur Bildung von Mustern
|
JPS561933A
(en)
*
|
1979-06-18 |
1981-01-10 |
Ibm |
Resist composition
|
US4284706A
(en)
*
|
1979-12-03 |
1981-08-18 |
International Business Machines Corporation |
Lithographic resist composition for a lift-off process
|
DE3040157A1
(de)
*
|
1980-10-24 |
1982-06-03 |
Hoechst Ag, 6000 Frankfurt |
Lichtemopfindliches gemisch und damit hergestelltes lichtempfindliches kopiermaterial
|
DE3100077A1
(de)
*
|
1981-01-03 |
1982-08-05 |
Hoechst Ag, 6000 Frankfurt |
Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
|
US4431724A
(en)
*
|
1981-01-07 |
1984-02-14 |
Ovchinnikov Jury M |
Offset printing plate and process for making same
|
DE3100856A1
(de)
*
|
1981-01-14 |
1982-08-12 |
Hoechst Ag, 6000 Frankfurt |
Lichtempfindliches gemisch auf basis von o-napthochinondiaziden und daraus hergestelltes lichtempfindliches kopiermaterial
|
JPS57163234A
(en)
*
|
1981-04-01 |
1982-10-07 |
Fuji Photo Film Co Ltd |
Photosensitive composition
|
DE3124936A1
(de)
*
|
1981-06-25 |
1983-01-20 |
Hoechst Ag, 6000 Frankfurt |
Lichtempfindliches gemisch auf basis von o-naphthochinondiaziden und daraus hergestelltes lichtempfindliches kopiermaterial
|
DE3127754A1
(de)
*
|
1981-07-14 |
1983-02-03 |
Hoechst Ag, 6000 Frankfurt |
Lichtempfindliches gemisch auf basis von o-naphthochinondiaziden und daraus hergestelltes lichtempfindliches kopiermaterial
|
US4499171A
(en)
*
|
1982-04-20 |
1985-02-12 |
Japan Synthetic Rubber Co., Ltd. |
Positive type photosensitive resin composition with at least two o-quinone diazides
|
JPS59165053A
(ja)
*
|
1983-03-11 |
1984-09-18 |
Japan Synthetic Rubber Co Ltd |
ポジ型感光性樹脂組成物
|
DE3220816A1
(de)
*
|
1982-06-03 |
1983-12-08 |
Merck Patent Gmbh, 6100 Darmstadt |
Lichtempfindliche komponenten fuer positiv arbeitende fotoresistmaterialien
|
GB2127175A
(en)
*
|
1982-09-07 |
1984-04-04 |
Letraset International Ltd |
Manufacture of signs
|
US4474864A
(en)
*
|
1983-07-08 |
1984-10-02 |
International Business Machines Corporation |
Method for dose calculation of photolithography projection printers through bleaching of photo-active compound in a photoresist
|
US4626491A
(en)
*
|
1983-10-07 |
1986-12-02 |
J. T. Baker Chemical Company |
Deep ultra-violet lithographic resist composition and process of using
|
JPS6088942A
(ja)
*
|
1983-10-21 |
1985-05-18 |
Fuji Photo Film Co Ltd |
感光性組成物
|
IT1169682B
(it)
*
|
1983-11-08 |
1987-06-03 |
I M G Ind Materiali Grafici Sp |
Composizione per fotoriproduzioni
|
US4535393A
(en)
*
|
1983-11-10 |
1985-08-13 |
Jahabow Industries, Inc. |
Fluorescent lamp housing
|
EP0147596A3
(en)
*
|
1983-12-30 |
1987-03-04 |
International Business Machines Corporation |
A positive lithographic resist composition
|
US4596763A
(en)
*
|
1984-10-01 |
1986-06-24 |
American Hoechst Corporation |
Positive photoresist processing with mid U-V range exposure
|
JPS61141441A
(ja)
*
|
1984-12-14 |
1986-06-28 |
Tokyo Ohka Kogyo Co Ltd |
ポジ型ホトレジスト組成物
|
GB8505402D0
(en)
*
|
1985-03-02 |
1985-04-03 |
Ciba Geigy Ag |
Modified phenolic resins
|
JPS6149895A
(ja)
*
|
1985-06-24 |
1986-03-11 |
Konishiroku Photo Ind Co Ltd |
印刷板の形成方法
|
US5256522A
(en)
*
|
1985-08-12 |
1993-10-26 |
Hoechst Celanese Corporation |
Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
|
US5217840A
(en)
*
|
1985-08-12 |
1993-06-08 |
Hoechst Celanese Corporation |
Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
|
US4929536A
(en)
*
|
1985-08-12 |
1990-05-29 |
Hoechst Celanese Corporation |
Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
|
US4684597A
(en)
*
|
1985-10-25 |
1987-08-04 |
Eastman Kodak Company |
Non-precipitating quinone diazide polymer containing photoresist composition with o-quinone diazide trisester as dissolution inhibitor
|
DE3686032T2
(de)
*
|
1985-12-27 |
1993-02-18 |
Japan Synthetic Rubber Co Ltd |
Strahlungsempfindliche positiv arbeitende kunststoffzusammensetzung.
|
DE3603578A1
(de)
*
|
1986-02-06 |
1987-08-13 |
Hoechst Ag |
Neue bis-1,2-naphthochinon-2-diazid-sulfonsaeure- amide, ihre verwendung in einem strahlungsempfindlichen gemisch und strahlungsempfindliches kopiermaterial
|
US4737437A
(en)
*
|
1986-03-27 |
1988-04-12 |
East Shore Chemical Co. |
Light sensitive diazo compound, composition and method of making the composition
|
US4732837A
(en)
*
|
1986-05-02 |
1988-03-22 |
Hoechst Celanese Corporation |
Novel mixed ester O-quinone photosensitizers
|
US4732836A
(en)
*
|
1986-05-02 |
1988-03-22 |
Hoechst Celanese Corporation |
Novel mixed ester O-quinone photosensitizers
|
US5035976A
(en)
*
|
1986-05-02 |
1991-07-30 |
Hoechst Celanese Corporation |
Photosensitive article having phenolic photosensitizers containing quinone diazide and acid halide substituents
|
US4902785A
(en)
*
|
1986-05-02 |
1990-02-20 |
Hoechst Celanese Corporation |
Phenolic photosensitizers containing quinone diazide and acidic halide substituents
|
US5162510A
(en)
*
|
1986-05-02 |
1992-11-10 |
Hoechst Celanese Corporation |
Process for the preparation of photosensitive compositions containing a mixed ester o-quinone photosensitizer
|
EP0244763B1
(de)
*
|
1986-05-02 |
1993-03-10 |
Hoechst Celanese Corporation |
Positiv-arbeitendes lichtempfindliches Gemisch und daraus hergestelltes lichtempfindliches Aufzeichnungsmaterial
|
US4871644A
(en)
*
|
1986-10-01 |
1989-10-03 |
Ciba-Geigy Corporation |
Photoresist compositions with a bis-benzotriazole
|
US4835085A
(en)
*
|
1986-10-17 |
1989-05-30 |
Ciba-Geigy Corporation |
1,2-Naphthoquinone diazide sulfonyl ester compound with linking benzotriazole groups and light-sensitive composition with compound
|
DE3635303A1
(de)
|
1986-10-17 |
1988-04-28 |
Hoechst Ag |
Verfahren zur abtragenden modifizierung von mehrstufig aufgerauhten traegermaterialien aus aluminium oder dessen legierungen und deren verwendung bei der herstellung von offsetdruckplatten
|
JP2568827B2
(ja)
*
|
1986-10-29 |
1997-01-08 |
富士写真フイルム株式会社 |
ポジ型フオトレジスト組成物
|
JPS63178228A
(ja)
*
|
1987-01-20 |
1988-07-22 |
Fuji Photo Film Co Ltd |
ポジ型フオトレジスト組成物
|
US5182183A
(en)
*
|
1987-03-12 |
1993-01-26 |
Mitsubishi Kasei Corporation |
Positive photosensitive planographic printing plates containing specific high-molecular weight compound and photosensitive ester of O-napthoquinonediazidosulfonic acid with polyhydroxybenzophenone
|
US4818658A
(en)
*
|
1987-04-17 |
1989-04-04 |
Shipley Company Inc. |
Photoactive esterification product of a diazooxide compound and a curcumin dye and photoresist materials with product
|
US4962171A
(en)
*
|
1987-05-22 |
1990-10-09 |
Hoechst Celanese Corporation |
Blocked monomer and polymers therefrom for use as photoresists
|
US5081001A
(en)
*
|
1987-05-22 |
1992-01-14 |
Hoechst Celanese Corporation |
Blocked monomer and polymers therefrom for use as photoresists
|
US4810613A
(en)
*
|
1987-05-22 |
1989-03-07 |
Hoechst Celanese Corporation |
Blocked monomer and polymers therefrom for use as photoresists
|
DE3718416A1
(de)
*
|
1987-06-02 |
1988-12-15 |
Hoechst Ag |
Lichtempfindliches gemisch auf basis von 1,2-naphthochinondiaziden, daraus hergestelltes aufzeichnungsmaterial und dessen verwendung
|
DE3729034A1
(de)
*
|
1987-08-31 |
1989-03-09 |
Hoechst Ag |
Lichtempfindliches gemisch auf basis von 1,2-naphthochinondiaziden und hiermit hergestelltes lichtempfindliches kopiermaterial
|
JPH07119374B2
(ja)
*
|
1987-11-06 |
1995-12-20 |
関西ペイント株式会社 |
ポジ型感光性カチオン電着塗料組成物
|
US4837121A
(en)
*
|
1987-11-23 |
1989-06-06 |
Olin Hunt Specialty Products Inc. |
Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin
|
US4970287A
(en)
*
|
1987-11-23 |
1990-11-13 |
Olin Hunt Specialty Products Inc. |
Thermally stable phenolic resin compositions with ortho, ortho methylene linkage
|
US5024921A
(en)
*
|
1987-11-23 |
1991-06-18 |
Ocg Microelectronic Materials, Inc. |
Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin used in a method of forming a positive photoresist image
|
US5250669A
(en)
*
|
1987-12-04 |
1993-10-05 |
Wako Pure Chemical Industries, Ltd. |
Photosensitive compound
|
US4914000A
(en)
*
|
1988-02-03 |
1990-04-03 |
Hoechst Celanese Corporation |
Three dimensional reproduction material diazonium condensates and use in light sensitive
|
US5059507A
(en)
*
|
1988-06-13 |
1991-10-22 |
Sumitomo Chemical Company, Limited |
Positive resist composition containing quinone diazide sulfonic acid ester of a phenol compound and an alkali soluble resin
|
DE3822522A1
(de)
*
|
1988-07-04 |
1990-03-22 |
Hoechst Ag |
1,2-naphthochinon-2-diazid-sulfonsaeureamide und lichtempfindliche gemische, die diese enthalten
|
US5248582A
(en)
*
|
1988-09-07 |
1993-09-28 |
Fuji Photo Film Co., Ltd. |
Positive-type photoresist composition
|
DE3837500A1
(de)
*
|
1988-11-04 |
1990-05-23 |
Hoechst Ag |
Neue, strahlungsempfindliche verbindungen, hiermit hergestelltes strahlungsempfindliches gemisch und aufzeichnungsmaterial
|
DE3837499A1
(de)
*
|
1988-11-04 |
1990-05-23 |
Hoechst Ag |
Verfahren zur herstellung von substituierten 1,2-naphthochinon-(2)-diazid-4-sulfonsaeureestern und deren verwendung in einem strahlungsempfindlichen gemisch
|
DE69029104T2
(de)
|
1989-07-12 |
1997-03-20 |
Fuji Photo Film Co Ltd |
Polysiloxane und positiv arbeitende Resistmasse
|
US5019478A
(en)
*
|
1989-10-30 |
1991-05-28 |
Olin Hunt Specialty Products, Inc. |
Selected trihydroxybenzophenone compounds and their use in photoactive compounds and radiation sensitive mixtures
|
US5219714A
(en)
*
|
1989-10-30 |
1993-06-15 |
Ocg Microelectronic Materials, Inc. |
Selected trihydroxybenzophenone compounds and their use in photoactive compounds and radiation sensitive mixtures
|
US5196517A
(en)
*
|
1989-10-30 |
1993-03-23 |
Ocg Microelectronic Materials, Inc. |
Selected trihydroxybenzophenone compounds and their use as photoactive compounds
|
US5075194A
(en)
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