AU779449B2 - Solid state heterojunction and solid state sensitized photovoltaic cell - Google Patents
Solid state heterojunction and solid state sensitized photovoltaic cell Download PDFInfo
- Publication number
- AU779449B2 AU779449B2 AU57711/01A AU5771101A AU779449B2 AU 779449 B2 AU779449 B2 AU 779449B2 AU 57711/01 A AU57711/01 A AU 57711/01A AU 5771101 A AU5771101 A AU 5771101A AU 779449 B2 AU779449 B2 AU 779449B2
- Authority
- AU
- Australia
- Prior art keywords
- heterojunction
- solid state
- hole conductor
- conductor
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title claims description 26
- 239000004020 conductor Substances 0.000 claims description 33
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000002096 quantum dot Substances 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 15
- 230000001235 sensitizing effect Effects 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 238000011282 treatment Methods 0.000 claims description 8
- 229910004613 CdTe Inorganic materials 0.000 claims description 5
- 229910004262 HgTe Inorganic materials 0.000 claims description 5
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000006104 solid solution Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 1
- 150000002894 organic compounds Chemical class 0.000 claims 1
- 150000002902 organometallic compounds Chemical class 0.000 claims 1
- 125000003003 spiro group Chemical group 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 239000000975 dye Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 7
- 206010070834 Sensitisation Diseases 0.000 description 6
- 230000008313 sensitization Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- -1 Ta2Os Chemical class 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001782 photodegradation Methods 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- SNFCXVRWFNAHQX-UHFFFAOYSA-N 9,9'-spirobi[fluorene] Chemical compound C12=CC=CC=C2C2=CC=CC=C2C21C1=CC=CC=C1C1=CC=CC=C21 SNFCXVRWFNAHQX-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- BQVVSSAWECGTRN-UHFFFAOYSA-L copper;dithiocyanate Chemical compound [Cu+2].[S-]C#N.[S-]C#N BQVVSSAWECGTRN-UHFFFAOYSA-L 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- VDQVEACBQKUUSU-UHFFFAOYSA-M disodium;sulfanide Chemical compound [Na+].[Na+].[SH-] VDQVEACBQKUUSU-UHFFFAOYSA-M 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000011532 electronic conductor Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 208000017983 photosensitivity disease Diseases 0.000 description 1
- 231100000434 photosensitization Toxicity 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- FSJWWSXPIWGYKC-UHFFFAOYSA-M silver;silver;sulfanide Chemical compound [SH-].[Ag].[Ag+] FSJWWSXPIWGYKC-UHFFFAOYSA-M 0.000 description 1
- 229910052979 sodium sulfide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 229910052959 stibnite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2009—Solid electrolytes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Electrochemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP00810681A EP1176646A1 (en) | 2000-07-28 | 2000-07-28 | Solid state heterojunction and solid state sensitized photovoltaic cell |
| GB00810681 | 2000-07-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AU5771101A AU5771101A (en) | 2002-01-31 |
| AU779449B2 true AU779449B2 (en) | 2005-01-27 |
Family
ID=8174836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU57711/01A Expired AU779449B2 (en) | 2000-07-28 | 2001-07-30 | Solid state heterojunction and solid state sensitized photovoltaic cell |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6861722B2 (enExample) |
| EP (1) | EP1176646A1 (enExample) |
| JP (2) | JP2002111031A (enExample) |
| AU (1) | AU779449B2 (enExample) |
Families Citing this family (143)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6919119B2 (en) * | 2000-05-30 | 2005-07-19 | The Penn State Research Foundation | Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films |
| US7042029B2 (en) * | 2000-07-28 | 2006-05-09 | Ecole Polytechnique Federale De Lausanne (Epfl) | Solid state heterojunction and solid state sensitized photovoltaic cell |
| JP3753605B2 (ja) * | 2000-11-01 | 2006-03-08 | シャープ株式会社 | 太陽電池およびその製造方法 |
| US7777303B2 (en) * | 2002-03-19 | 2010-08-17 | The Regents Of The University Of California | Semiconductor-nanocrystal/conjugated polymer thin films |
| US7989695B2 (en) * | 2001-12-18 | 2011-08-02 | Steven Allen Carlson | Organic photovoltaic cells |
| US6946597B2 (en) | 2002-06-22 | 2005-09-20 | Nanosular, Inc. | Photovoltaic devices fabricated by growth from porous template |
| US7594982B1 (en) | 2002-06-22 | 2009-09-29 | Nanosolar, Inc. | Nanostructured transparent conducting electrode |
| US7253017B1 (en) | 2002-06-22 | 2007-08-07 | Nanosolar, Inc. | Molding technique for fabrication of optoelectronic devices |
| US6852920B2 (en) * | 2002-06-22 | 2005-02-08 | Nanosolar, Inc. | Nano-architected/assembled solar electricity cell |
| US7291782B2 (en) * | 2002-06-22 | 2007-11-06 | Nanosolar, Inc. | Optoelectronic device and fabrication method |
| EP1547160A1 (en) * | 2002-08-13 | 2005-06-29 | Agfa-Gevaert | Nano-porous metal oxide semiconductor spectrally sensitized with metal chalcogenide nano-particles |
| JP2005539349A (ja) * | 2002-08-13 | 2005-12-22 | アグフア−ゲヴエルト | 金属カルコゲニドナノ−粒子を用いて分光増感されたナノ−多孔質金属酸化物半導体 |
| WO2004025748A1 (en) * | 2002-09-10 | 2004-03-25 | Agfa-Gevaert | Photovoltaic device comprising a 1,3,5-tris-aminophenyl-benzene compound |
| US6929970B2 (en) | 2002-09-12 | 2005-08-16 | Agfa-Gevaert | Process for preparing nano-porous metal oxide semiconductor layers |
| KR100594578B1 (ko) * | 2002-12-23 | 2006-07-03 | 삼성전자주식회사 | 접합된 나노입자를 이용한 수광소자 |
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| US7645934B1 (en) | 2003-04-29 | 2010-01-12 | Nanosolar, Inc. | Nanostructured layer and fabrication methods |
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| KR101118810B1 (ko) | 2003-06-12 | 2012-03-20 | 시리카 코포레이션 | 자유 캐리어의 정상 상태 비평형 분포 및 이를 이용한 광자에너지 상승 변환 |
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| AU5771101A (en) | 2002-01-31 |
| JP2002111031A (ja) | 2002-04-12 |
| US6861722B2 (en) | 2005-03-01 |
| JP2014042082A (ja) | 2014-03-06 |
| US20020017656A1 (en) | 2002-02-14 |
| EP1176646A1 (en) | 2002-01-30 |
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