JP2002111031A - 固体ヘテロ接合および固体増感（感光性）光起電力セル - Google Patents

固体ヘテロ接合および固体増感（感光性）光起電力セル

Info

Publication number
JP2002111031A
JP2002111031A JP2001230059A JP2001230059A JP2002111031A JP 2002111031 A JP2002111031 A JP 2002111031A JP 2001230059 A JP2001230059 A JP 2001230059A JP 2001230059 A JP2001230059 A JP 2001230059A JP 2002111031 A JP2002111031 A JP 2002111031A
Authority
JP
Japan
Prior art keywords
heterojunction
solid
state
conductor
hole conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001230059A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002111031A5 (enExample
Inventor
Michael Graetzel
グラッツェル ミカエル
Robert Plass
プラス ロベルト
Udo Bach
バッハ ウドゥ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ecole Polytechnique Federale de Lausanne EPFL
Original Assignee
Ecole Polytechnique Federale de Lausanne EPFL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytechnique Federale de Lausanne EPFL filed Critical Ecole Polytechnique Federale de Lausanne EPFL
Publication of JP2002111031A publication Critical patent/JP2002111031A/ja
Publication of JP2002111031A5 publication Critical patent/JP2002111031A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Electrochemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
  • Electroluminescent Light Sources (AREA)
JP2001230059A 2000-07-28 2001-07-30 固体ヘテロ接合および固体増感（感光性）光起電力セル Withdrawn JP2002111031A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00810681A EP1176646A1 (en) 2000-07-28 2000-07-28 Solid state heterojunction and solid state sensitized photovoltaic cell
EP00810681.7 2000-07-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013253070A Division JP2014042082A (ja) 2000-07-28 2013-12-06 固体ヘテロ接合および固体増感（感光性）光起電力セル

Publications (2)

Publication Number Publication Date
JP2002111031A true JP2002111031A (ja) 2002-04-12
JP2002111031A5 JP2002111031A5 (enExample) 2008-09-11

Family

ID=8174836

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2001230059A Withdrawn JP2002111031A (ja) 2000-07-28 2001-07-30 固体ヘテロ接合および固体増感（感光性）光起電力セル
JP2013253070A Pending JP2014042082A (ja) 2000-07-28 2013-12-06 固体ヘテロ接合および固体増感（感光性）光起電力セル

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013253070A Pending JP2014042082A (ja) 2000-07-28 2013-12-06 固体ヘテロ接合および固体増感（感光性）光起電力セル

Country Status (4)

Country Link
US (1) US6861722B2 (enExample)
EP (1) EP1176646A1 (enExample)
JP (2) JP2002111031A (enExample)
AU (1) AU779449B2 (enExample)

Cited By (15)

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JP2005050979A (ja) * 2003-07-31 2005-02-24 Kyocera Corp 光電変換装置
JP2006128204A (ja) * 2004-10-26 2006-05-18 Kyocera Corp 光電変換装置およびそれを用いた光発電装置
JP2007273984A (ja) * 2006-03-31 2007-10-18 Aisin Seiki Co Ltd 光電池デバイス
JP2009182333A (ja) * 2009-02-05 2009-08-13 Sony Corp 電子デバイス及びその製造方法
JP2009532851A (ja) * 2006-02-16 2009-09-10 ソレクサント・コーポレイション ナノ粒子増感ナノ構造太陽電池
KR100934732B1 (ko) * 2007-06-01 2009-12-30 한국기계연구원 양자점을 이용한 태양전지 및 이의 제조방법
JP2010525597A (ja) * 2007-04-25 2010-07-22 ナノコ テクノロジーズ リミテッド ハイブリッド光電池及びそれに関連した方法
KR101060229B1 (ko) 2008-12-12 2011-08-29 포항공과대학교 산학협력단 양자점 덴드리머를 이용한 광전변환소자
JP2012142467A (ja) * 2011-01-04 2012-07-26 Univ Of Shiga Prefecture 有機薄膜太陽電池の製造方法および有機薄膜太陽電池
JP2013098334A (ja) * 2011-10-31 2013-05-20 Sekisui Chem Co Ltd 有機無機複合薄膜太陽電池
JP2013098333A (ja) * 2011-10-31 2013-05-20 Sekisui Chem Co Ltd 有機無機複合薄膜太陽電池
JP2013520767A (ja) * 2010-02-18 2013-06-06 コリア リサーチ インスティチュート オブ ケミカル テクノロジー ナノ構造無機−有機ヘテロ接合太陽電池の製造方法
JP2013524530A (ja) * 2010-04-06 2013-06-17 ザ ガバニング カウンシル オブ ザ ユニバーシティ オブ トロント 空乏ヘテロ接合とシェルパッシベートナノ粒子を有する光起電力デバイス
JP2016503574A (ja) * 2012-12-04 2016-02-04 シャープ株式会社 量子ドット増感太陽電池
KR20190143382A (ko) * 2018-06-20 2019-12-30 삼성전자주식회사 전자소자 및 그의 제조 방법

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US7777303B2 (en) * 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
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