JP2017085113A - 空乏ヘテロ接合とシェルパッシベートナノ粒子を有する光起電力デバイス - Google Patents
空乏ヘテロ接合とシェルパッシベートナノ粒子を有する光起電力デバイス Download PDFInfo
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- JP2017085113A JP2017085113A JP2016225169A JP2016225169A JP2017085113A JP 2017085113 A JP2017085113 A JP 2017085113A JP 2016225169 A JP2016225169 A JP 2016225169A JP 2016225169 A JP2016225169 A JP 2016225169A JP 2017085113 A JP2017085113 A JP 2017085113A
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- photovoltaic device
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Abstract
Description
この実施例は、本発明の範囲内の空乏ヘテロ接合光起電力セルの生成方法を示しており、それぞれのセルは、直径が3.7nm(バンドギャップ1.3eV),4.3nm(バンドギャップ1.1eV)および5.5nm(バンドギャップ0.9eV)のPbSコロイド量子ドット(約1017cm-3n型ドーピング)層を透明TiO2電極上に堆積することによって形成される。
この実施例は、量子ドットコア、陽イオンの内側シェルおよび陰イオンの外側シェルを含むナノ粒子の、本発明の範囲内での準備および使用を示している。
Claims (54)
- 第1の光透過電極と、
前記第1の電極と直接電気接触する第1の半導体層と、
光吸収ナノ粒子を含み、前記第1の半導体層と直接電気接触する第2の半導体層と、さらに
前記第2の半導体層と直接電気接触する第2の電極と、を備え、
前記第1および第2の半導体層はその間に接合を形成し、その接合の少なくとも一方の側は当該デバイスが照射されていない場合、自由電子および自由ホールが実質的に空乏化されている、光起電力デバイス。 - 請求項1に記載の光起電力デバイスにおいて、前記第1の半導体層はn型電子受容層であり、前記第2の半導体層の前記光吸収ナノ粒子はp型ナノ粒子であり、前記n型電子受容層と前記p型ナノ粒子は、前記接合の少なくとも一方の側が空乏化するように、充分に異なる大きさのバンドギャップを有する、光起電力デバイス。
- 請求項2に記載の光起電力デバイスにおいて、前記n型電子受容層の前記バンドギャップは前記p型光吸収ナノ粒子の層のバンドギャップより少なくとも約1.5eV大きい、光起電力デバイス。
- 請求項2に記載の光起電力デバイスにおいて、前記n型電子受容層のバンドギャップは前記p型光吸収ナノ粒子の層のバンドギャップより少なくとも約1.5eVから約5eV大きい、光起電力デバイス。
- 請求項2に記載の光起電力デバイスにおいて、前記n型電子受容層のバンドギャップは前記p型光吸収ナノ粒子の層のバンドギャップより少なくとも約2eVから約5eV大きい、光起電力デバイス。
- 請求項1に記載の光起電力デバイスにおいて、前記p型光吸収ナノ粒子はコロイド量子ドットである、光起電力デバイス。
- 請求項1に記載の光起電力デバイスにおいて、前記p型光吸収ナノ粒子は金属カルコゲナイドコロイド量子ドットである、光起電力デバイス。
- 請求項1に記載の光起電力デバイスにおいて、前記p型光吸収ナノ粒子は鉛カルコゲナイドコロイド量子ドットである、光起電力デバイス。
- 請求項1に記載の光起電力デバイスにおいて、前記p型光吸収ナノ粒子は硫化鉛コロイド量子ドットである、光起電力デバイス。
- 請求項6に記載の光起電力デバイスにおいて、前記コロイド量子ドットは3nmから6nmの数値平均直径を有する、光起電力デバイス。
- 請求項1に記載の光起電力デバイスにおいて、前記光吸収ナノ粒子は、表面に陰イオンを含む1つの表面を備えた量子ドットコアと、前記量子ドットコアを取り囲み前記コア表面の前記陰イオンをパッシベートする陽イオンを含む第1のシェルと、さらに、前記第1のシェルを取り囲み前記コア表面において存在する全ての陽イオンと前記第1のシェルの前記陽イオンとをパッシベートする陰イオンを含む第2のシェルと、を備えるナノ粒子である、光起電力デバイス。
- 請求項11に記載の光起電力デバイスにおいて、前記量子ドットコアは金属カルコゲナイドコロイド量子ドットである、光起電力デバイス。
- 請求項11に記載の光起電力デバイスにおいて、前記量子ドットコアは金属硫化物コロイド量子ドットである、光起電力デバイス。
- 請求項11に記載の光起電力デバイスにおいて、前記量子ドットコアは金属硫化物コロイド量子ドットであり、前記第1のシェルの前記陽イオンは、Cd2+、Pb2+、Zn2+およびSn2+からなるグループから選択された部材である、光起電力デバイス。
- 請求項11に記載の光起電力デバイスにおいて、前記量子ドットコアは金属硫化物コロイド量子ドットであり、前記第1のシェルの前記陽イオンは、Cd2+である、光起電力デバイス。
- 請求項11に記載の光起電力デバイスにおいて、前記第1のシェルの前記陽イオンはCd2+であり、前記第2のシェルの前記陰イオンは、ハロゲンイオンおよびチオシアン酸イオンからなるグループから選択された部材である、光起電力デバイス。
- 請求項11に記載の光起電力デバイスにおいて、前記量子ドットコアは金属硫化物コロイド量子ドットであり、前記第1のシェルの前記陽イオンはCd2+であり、前記第2のシェルの第2の陰イオンはハロゲンイオンである、光起電力デバイス。
- 請求項11に記載の光起電力デバイスにおいて、前記量子ドットコアは金属硫化物コロイド量子ドットであり、前記第1のシェルの前記陽イオンはCd2+であり、前記第2のシェルの前記陰イオンは臭素イオンである、光起電力デバイス。
- 請求項2に記載の光起電力デバイスにおいて、前記n型電子受容層は二酸化チタンである、光起電力デバイス。
- 請求項1に記載の光起電力デバイスにおいて、前記第1の光透過電極は、酸化アルミニウム、酸化亜鉛、酸化インジウムスズおよびフッ素ドープの酸化スズからなるグループから選択された部材である、光起電力デバイス。
- 請求項1に記載の光起電力デバイスにおいて、前記第1の光透過電極はフッ素ドープの酸化スズである、光起電力デバイス。
- 請求項1に記載の光起電力デバイスにおいて、前記第2の電極は、ニッケル、フッ化リチウム、プラチナ、パラジウム、銀、金、銅および銀、金および銅の合金からなるグループから選択された部材である、光起電力デバイス。
- 請求項1に記載の光起電力デバイスにおいて、前記第2の電極は金である、光起電力デバイス。
- 量子ドットコアと、
前記量子ドットコアを実質的に完全に取り囲む陽イオンを含む第1のシェルと、および
前記第1のシェルを実質的に完全に取り囲む陰イオンを含む第2のシェルと、を備える、ナノ粒子。 - 請求項24に記載のナノ粒子において、前記量子ドットコアは金属カルコゲナイドコロイド量子ドットである、ナノ粒子。
- 請求項24に記載のナノ粒子において、前記量子ドットコアは金属硫化物コロイド量子ドットである、ナノ粒子。
- 請求項24に記載のナノ粒子において、前記量子ドットコアは金属硫化物コロイド量子ドットであり、前記第1のシェルの前記陽イオンは、Cd2+、Pb2+、Zn2+およびSn2+からなるグループから選択された部材である、ナノ粒子。
- 請求項24に記載のナノ粒子において、前記量子ドットコアは金属硫化物コロイド量子ドットであり、前記第1のシェルの前記陽イオンはCd2+である、ナノ粒子。
- 請求項24に記載のナノ粒子において、前記量子ドットコアは、金属硫化物コロイド量子ドットであり、前記第1のシェルの前記陽イオンはCd2+であり、前記第2のシェルの前記陰イオンは、ハロゲンイオンおよびチオシアン酸イオンからなるグループから選択された部材である、ナノ粒子。
- 請求項24に記載のナノ粒子において、前記量子ドットコアは、金属硫化物コロイド量子ドットであり、前記第1のシェルの前記陽イオンはCd2+であり、前記第2のシェルの前記陰イオンはハロゲンイオンである、ナノ粒子。
- 請求項24に記載のナノ粒子において、前記量子ドットコアは金属硫化物コロイド量子ドットであり、前記第1のシェルの前記陽イオンはCd2+であり、前記第2のシェルの前記陰イオンは臭素イオンである、ナノ粒子。
- 第1の光透過電極と、
前記第1の電極と直接電気的接触する第1の半導体層と、
光吸収ナノ粒子を含み、前記第1の半導体層と直接電気的接触する第2の半導体層であって、前記ナノ粒子のそれぞれは、量子ドットコアと、前記量子ドットコアを実質的に完全に取り囲む陽イオンを含む第1のシェルと、前記第1のシェルを実質的に完全に取り囲む陰イオンを含む第2のシェルとを含む、前記第2の半導体層と、および
前記第2の半導体層と直接電気的接触する第2の電極と、を含む、光起電力デバイス。 - 請求項32に記載の光起電力デバイスにおいて、前記量子ドットコアは金属カルコゲナイドコロイド量子ドットである、光起電力デバイス。
- 請求項32に記載の光起電力デバイスにおいて、前記量子ドットコアは金属硫化物コロイド量子ドットである、光起電力デバイス。
- 請求項32に記載の光起電力デバイスにおいて、前記量子ドットコアは金属硫化物コロイド量子ドットであり、前記第1のシェルの前記陽イオンは、Cd2+、Pb2+、Zn2+およびSn2+からなるグループから選択された部材である、光起電力デバイス。
- 請求項32に記載の光起電力デバイスにおいて、前記量子ドットコアは金属硫化物コロイド量子ドットであり、前記第1のシェルの前記陽イオンはCd2+である、光起電力デバイス。
- 請求項32に記載の光起電力デバイスにおいて、前記第1のシェルの前記陽イオンはCd2+であり、前記第2のシェルの前記陰イオンは、ハロゲンイオンおよびチオシアン酸イオンからなるグループから選択された部材である、光起電力デバイス。
- 請求項32に記載の光起電力デバイスにおいて、前記量子ドットコアは金属硫化物コロイド量子ドットであり、前記第1のシェルの前記陽イオンはCd2+であり、かつ、前記第2のシェルの前記陰イオンはハロゲンイオンである、光起電力デバイス。
- 請求項32に記載の光起電力デバイスにおいて、前記量子ドットコアは金属硫化物コロイド量子ドットであり、前記第1のシェルの前記陽イオンはCd2+であり、かつ、前記第2のシェルの前記陰イオンは臭素イオンである、光起電力デバイス。
- 請求項32に記載の光起電力デバイスにおいて、前記第1の半導体層は二酸化チタンである、光起電力デバイス。
- 請求項32に記載の光起電力デバイスにおいて、前記第1の光透過電極は、酸化アルミニウム、酸化亜鉛、酸化インジウムスズおよびフッ素ドープの酸化スズからなるグループから選択された部材であり、前記第2の電極は、ニッケル、フッ化リチウム、プラチナ、パラジウム、銀、金、銅および銀、金および銅の合金からなるグループから選択された部材である、光起電力デバイス。
- 請求項32に記載の光起電力デバイスにおいて、前記第1の光透過電極は、フッ素ドープの酸化スズであり、前記第2の電極は金である、光起電力デバイス。
- パッシベートされたp型半導体ナノ粒子を製造する方法において、前記方法は、
(a)表面陰イオンを有するp型半導体コロイド量子ドットを、陽イオン含有試薬の溶液によって処理して前記表面陰イオンをパッシベートし、前記陽イオンによって被覆されたコロイド量子ドットを形成し、さらに
(b)被覆された前記コロイド量子ドットを、前記陽イオンをパッシベートする陰イオン含有試薬の溶液によって処理する、各ステップを含む、方法。 - 請求項43に記載の方法において、前記p型半導体コロイド量子ドットは、金属カルコゲナイドコロイド量子ドットである、方法。
- 請求項43に記載の方法において、前記p型半導体コロイド量子ドットは、金属硫化物コロイド量子ドットである、方法。
- 請求項43に記載の方法において、前記p型半導体コロイド量子ドットは、硫化鉛コロイド量子ドットである、方法。
- 請求項43に記載の方法において、前記陽イオン含有試薬の前記陽イオンは、Cd2+、Pb2+、Zn2+およびSn2+からなるグループから選択された部材である、方法。
- 請求項43に記載の方法において、前記陽イオン含有試薬の前記陽イオンはCd2+である、方法。
- 請求項43に記載の方法において、前記陰イオン含有試薬の前記陰イオンは、ハロゲンイオンおよびチオシアン酸イオンからなるグループから選択された部材である、方法。
- 請求項43に記載の方法において、前記陽イオン含有試薬は、塩化カドミニウム(II)−テトラデジルホスホン酸−オレイルアミンである、方法。
- 請求項43に記載の方法において、前記陰イオン含有試薬の前記陰イオンは、ハロゲンイオンおよびチオシアン酸イオンからなるグループから選択された部材である、方法。
- 請求項43に記載の方法において、前記陰イオン含有試薬の前記陰イオンはハロゲンイオンである、方法。
- 請求項43に記載の方法において、前記陰イオン含有試薬の前記陰イオンは臭素イオンである、方法。
- 請求項43に記載の方法において、前記陰イオン含有試薬は、臭化セチルトリメチルアンモニウム、塩化ヘキサトリメチルアンモニウム、ヨウ化テトラブチルアンモニウムおよびチオシアン酸テトラブチルアンモニウムからなるグループから選択された部材である、方法。
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WO2014130868A1 (en) * | 2013-02-21 | 2014-08-28 | The Governing Council Of The University Of Toronto | Photovoltaic devices with plasmonic nanoparticles |
JP2017502526A (ja) * | 2013-10-04 | 2017-01-19 | キング アブドゥラー ユニバーシティ オブ サイエンス アンド テクノロジー | 量子ドットを作製するためのシステム及び方法<関連出願からの優先権主張> 本願は、2013年10月4日に出願された、出願番号が61/886,837であり「量子ドットを作製するためのシステム及び方法」と題する同時係属中の米国仮出願からの優先権を主張するものであり、参照によりその全体が本明細書に組み込まれる。 本願は、2013年10月14日に出願された、出願番号が61/890,536であり「量子ドットを作製するためのシステム及び方法」と題する同時係属中の米国仮出願からの優先権を主張するものであり、参照によりその全体が本明細書に組み込まれる。 本願は、2014年7月15日に出願された、出願番号が62/024,490であり「量子ドットを作製するためのシステム及び方法」と題する同時係属中の米国仮出願からの優先権を主張するものであり、参照によりその全体が本明細書に組み込まれる。 |
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